Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SRAM 64KX8 5V Search Results

    SRAM 64KX8 5V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X28C512DM-15/B Rochester Electronics LLC X28C512 - EEPROM, 64KX8, Parallel, CMOS Visit Rochester Electronics LLC Buy
    X28C513JIZ-12 Rochester Electronics X28C513 - EEPROM, 64KX8, 5V, Parallel Visit Rochester Electronics Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    AM27C512-70JI Rochester Electronics LLC OTP ROM, 64KX8, 70ns, CMOS, PQCC32, LCC-32 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    SRAM 64KX8 5V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High-Performance 64Kx8 CMOS SRAM p i AS7C512 AS7C512L 64Kx8 CMOS SRAM Common I/O FEATURES Equal access and cycle times • Organization; 65,536 words x 8 bits • Highspeed • Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time


    OCR Scan     		PDF 64Kx8 AS7C512 AS7C512L 64Kx8 32-pin 7C256 7C1024 10Q3441

    KM68512ALG-7

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6nm CMOS • Organization: 64Kx8 • Power Supply Voltage: Single 5V±10% • Low Data Retention Voltage : 2V Min • Three state output and T T t Compatfole


    OCR Scan     		PDF KM68512A 64Kx8 64Kx8 32-SOP-525, 32-TSQP1-0820F KM88512A KM68512AL KM68512AL-L KM68512AU KM68512ALI-L KM68512ALG-7

    CAW-18

    Abstract: megatron
    Text: High-Performance 64Kx8 3.3V CMOS SRAM PI ^ ¿ 9 ^ AS7C3512 AS7C3512L P R E L IM IN A R Y Low Voltage 64Kx8 CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply


    OCR Scan     		PDF AS7C3512 64Kx8 AS7C3512L 32Jose, CAW-18 megatron

    Untitled

    Abstract: No abstract text available
    Text: High Performance 64KX8 CMOS SRAM AS7C512 AS7C512L 64KX8 CMOS SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access time - 3 / 4 / S / 6 / 8 ns output enable access tim e • Low pow er consum ption


    OCR Scan     		PDF 64KX8 AS7C512 AS7C512L 64KX8 0DDD473

    2TZ21

    Abstract: 0820F C2733
    Text: Advance KM68V512B, KM68U512B Family CMOS SRAM 64Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 j/n CMOS • Organization: 64Kx8 • Power Supply Voltage KM68V512A fam ily: 3.3V±0.3V KM68U512A fam ily: 3,0V±0,3V


    OCR Scan     		PDF KM68V512B, KM68U512B 64Kx8 64Kx8 KM68V512A KM68U512A 32-SOP-525, 32-TSOP1-0820F, 32-TSOP1 KMG8V512B 2TZ21 0820F C2733

    SRAM 64KX8 5V

    Abstract: EDI8M864C A012C 64Kx8 bit CMOS Static RAM
    Text: moi _ EDI8M864C Electronic D *tlgn * Inc. High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory


    OCR Scan     		PDF EDI8M864C 64Kx8 EDI8M864C 32Kx8 the32Kx8 MIL-STD-883, SRAM 64KX8 5V A012C 64Kx8 bit CMOS Static RAM

    Untitled

    Abstract: No abstract text available
    Text: _EDI8M864C m o i Electronic D«*lgn> Inc. High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory


    OCR Scan     		PDF EDI8M864C 64Kx8 EDI8M864C 32Kx8 150ns

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible


    OCR Scan     		PDF KM68512A 64Kx8 64Kx8 32-SOP, 32-TSOP 7Tb4142 525mil) 32-THlN

    static ram 64kx8

    Abstract: EDI8M864C
    Text: 23EDI EDI8M864C Electronic D«tigna Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory carriers mounted on a multi-layered ceramic substrate.


    OCR Scan     		PDF EDI8M864C 64Kx8 EDI8M864C 32Kx8 150ns static ram 64kx8

    eram 32kx8

    Abstract: ic 4570 PINOUT
    Text: ^EDI / EDI8M864C Electronic D*#lçn* Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memor carriers mounted on a multi-layered ceramic substrate.


    OCR Scan     		PDF 64Kx8 EDI8M864C EDI8M864C 32Kx8 150ns eram 32kx8 ic 4570 PINOUT

    32Kx16

    Abstract: Intel EEPROM 32kx8
    Text: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4


    OCR Scan     		PDF 32Kx8 64KX8 32KX16 128KX8 64KX16 32KX32 64KX32 512KX8 256KX16 Intel EEPROM 32kx8

    AS7C3512-15PC

    Abstract: No abstract text available
    Text: High-Performance 64Kx8 3.3V CMOS SRAM PI AS7C3512 AS7C3512L PR E LIM IN A RY Low Voltage 64KxS CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply


    OCR Scan     		PDF 64Kx8 AS7C3512 AS7C3512L 64KxS 32-pin 00G0CH5 AS7C3512-15PC

    004II

    Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
    Text: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP KM68V512Aand 004II a1215 KM68U512ALE-L KM68U512ALTGE-8L

    AS7C512-20JC

    Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
    Text: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O


    OCR Scan     		PDF AS7C512 AS7C512L 64Kx8 32-pin 7C256 7C1024 AS7C512-20JC AS7C512-15pc AS7C512 10n12 AS7C512-12JC AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20

    Untitled

    Abstract: No abstract text available
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP KM68V512Aand

    Untitled

    Abstract: No abstract text available
    Text: KM68512L/L-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85 ns max. • Low Power Dissipation Standby (CMOS): 550jiW (max.) L Version 110nW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power S upply


    OCR Scan     		PDF KM68512L/L-L 64Kx8 550jiW 110nW 385mW KM68512LG/LG-L 32-pin 525mil) KM68512LT/LT-L

    Untitled

    Abstract: No abstract text available
    Text: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CMOS) : 550^W(Max.)L-Ver.


    OCR Scan     		PDF KM68512ALI 64Kx8 385mW KM68512ALGI/ALGI-L 32-pin 525mil) KM68512ALTI/ALTI-L KM68512ALI/ALI-L 288-bit

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%


    OCR Scan     		PDF KM68512A 64Kx8 32-SOP, 32-TSOP DG23b27

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft Novem er 28th 1993 Design target 0.1 Revision May 13th 1994 Preliminary 1.0 Finalize December 1st 1994 Final


    OCR Scan     		PDF KM68512A 64Kx8 100ns 525mil) 32-THIN 0820F)

    A2ND

    Abstract: KM68U512 SRAM 64KX8 5V KM68U512ALE-L KM68U512ALG-10L 00E3b
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A fam ily: 3.3V +/- 0.3V KM68U512A fam ily: 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP KM68VS12A 0G23b7fl A2ND KM68U512 SRAM 64KX8 5V KM68U512ALE-L KM68U512ALG-10L 00E3b

    Untitled

    Abstract: No abstract text available
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM68512AL / AL-L 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|xW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM68512AL 64Kx8 385mW KM68512ALG/ALG-L 32-pin 525mil) KM68512ALT/ALT-L 8512A 288-bit

    SRAM 64Kx8

    Abstract: 64Kx8 CMOS RAM KM68512AL
    Text: KM68512AL / AL-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|iW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM68512AL 64Kx8 385mW KM68512ALG/ALG-L 32-pin 525mil) KM68512ALT/ALT-L KM68512AL/AL-L 288-bit SRAM 64Kx8 64Kx8 CMOS RAM

    A2ND

    Abstract: KM68U512ALE-L KM68V512A
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage The KM68V512A and KM68U512A family are fabricated by SAMSUNG'S advanced CMOS process


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP A2ND KM68U512ALE-L