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Abstract: No abstract text available
Text: Package outline BGA324: plastic ball grid array package; 324 balls SOT1129-2 B D D1 A ball A1 index area E1 E A2 A A1 detail X e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C B A C C A B C y y1 C e e2 1/2 e 1 3 5 7 9 11 13 15 17 19 21 shape
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BGA324:
OT1129-2
sot1129-2
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A D A F D1 U1 B q C H1 c 2 1 p U2 H E1 E 5 A w1 3 A B 4 b w2 C Q e 5 Dimensions Unit 1 mm 10 mm scale A max 4.75 nom min 3.45 b 3.94 c D D1 e 0.18 20.02 19.96 E E1 F H H1 p 9.53 9.53 1.14 19.94 12.83 3.38
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OT1121A
sot1121a
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Untitled
Abstract: No abstract text available
Text: Package outline BGA324: plastic ball grid array package; 324 balls; body 23 x 23 x 1.78 mm SOT1129-1 B D D1 A ball A1 index area E1 E A A2 A1 detail X e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C B A e2 1/2 e 1 2 3 4 5 6 7 9 11 13 15 17 19 21
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BGA324:
OT1129-1
sot1129-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline XSON3: plastic extremely thin small outline package; no leads; 3 terminals; body 1 x 1.45 x 0.5 mm b SOT1122 b1 1 4x 2 L1 3 L e 2 e1 e1 4× A (2) A1 D type code E terminal 1 index area pin 1 indication 1 Dimensions Unit mm 2 mm scale A(1)
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OT1122
sot1122
MO-252
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Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged LDMOST ceramic package; 6 leads SOT1120B D A F 3 D1 L D c U1 1 4 5 y α H Z2 U2 Z1 Z 6 E1 E 7 2 b1 b w2 5 A max 4.75 nom min 3.45 mm 10 mm scale Dimensions Unit 1 Q D b1 1.83 12.83 0.18 20.02 19.96 9.53 9.53 1.14 19.94 3.56
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OT1120B
OT1120B
sot1120b
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Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged LDMOST ceramic package; 6 leads SOT1120B D A F 3 D1 L D c U1 1 4 5 y α H Z2 U2 Z1 Z 6 E1 E 7 2 b1 b w2 5 A max 4.75 nom min 3.45 mm 10 mm scale Dimensions Unit 1 Q D b1 1.83 12.83 0.18 20.02 19.96 9.53 9.53 1.14 19.94 3.56
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OT1120B
sot1120b
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Abstract: No abstract text available
Text: Package outline Flanged LDMOST ceramic package; 2 mounting holes; 6 leads SOT1120A D A F D1 L U1 B q 4 5 p U2 H c C 1 E1 E 3 A w1 6 2 b1 b A B 7 w2 5 C Q 10 mm scale Dimensions Unit 1 mm A max 4.75 nom min 3.45 b b1 1.14 12.83 c D D1 E E1 F H L 0.18 20.02 19.96 9.53 9.53 1.14 19.94 2.87
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OT1120A
33ion
sot1120a
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Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint 1.25 0.65 0.55 0.65 0.55 0.45 1.75 0.475 0.7 2x 0.6 (2×) solder resist solder paste = solderland occupied area Dimensions in mm 0.55 0.4 (2×) www.nxp.com 0.3 (2×) 2010 NXP B.V. sot1122_fr All rights reserved. Reproduction in whole or in part is prohibited without prior consent of the copyright owner. The information presented in this document does not
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sot1122
rig65
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA324: plastic thermal enhanced ball grid array package; 324 balls; heatsink SOT1123-2 B D D1 A ball A1 index area E1 j E A A2 A1 detail X e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C B A C C A B C y y1 C e heatsink e2
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HBGA324:
OT1123-2
sot1123-2
MS-034
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Text: Package outline HLQFP256: plastic thermal enhanced low profile quad flat package; 256 leads; body 28 x 28 x 1.4 mm; exposed die pad SOT1128-1 c exposed die pad y X Dh 192 ZE 129 193 A 128 e bp Eh D w HE A A2 A3 A1 θ Lp detail X L pin 1 index 256 65 1 64 e
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HLQFP256:
OT1128-1
MS-026
sot1128-1
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Text: Package outline Earless flanged ceramic package; 4 leads SOT1121C 0.3 mm gauge plane D Lp A F 5 D1 y Q detail X U1 v B c H1 A 1 H E1 U2 3 A E 4 w2 b B θ e 5 10 mm scale Dimensions Unit 1 X 2 A b c D D1 e E E1 F H H1 Lp Q U1 U2 v w2 y max 4.75 3.94 0.18 20.02 19.96
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OT1121C
sot1121c
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Text: Reflow soldering footprint Footprint information for reflow soldering of HLQFP256 package SOT1128-1 Hx Gx P2 0.125 P1 SPx nSPx Hy SLy Gy SPy tot SPy By Ay nSPy SPx tot SLx C D2 (8x) D1 Bx Ax Generic footprint pattern Refer to the package outline drawing for actual layout
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HLQFP256
OT1128-1
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Untitled
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Text: Package outline XSON3: plastic, extremely thin small outline package; no leads; 3 terminals; body 1.0 x 1.45 x 0.5 mm SOT1122-1 X A A1 B D A detail X E terminal 1 index area e1 v w C A B C b C terminal 1 index area b1 y1 C y 1 L 3 e L1 2 L3 L2 2 mm scale Dimensions mm are the original dimensions
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OT1122-1
sot1122-1
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA324: plastic thermal enhanced ball grid array package; 324 balls; heatsink SOT1123-1 B D D1 A ball A1 index area E1 j E A A2 A1 detail X e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C B A C C A B C y y1 C e heatsink e2
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HBGA324:
OT1123-1
sot1123-1
MS-034
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rf power transistors
Abstract: SOT539A SOT113 SOT1130A SOT1121A SOT922-1 SOT1135A sot1244c SOT1110B
Text: Ceramic packages for RF Power Transistors 1 SOT467B SOT467C SOT1135B SOT1135C SOT1130A SOT1130B SOT1135A SOT1135D SOT1120A SOT1120B SOT1121A SOT1121B SOT1121C SOT1121D SOT1112A SOT1112B Ceramic packages for RF Power Transistors (2) SOT1110A SOT1110B SOT1117A
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OT467B
OT467C
OT1135B
OT1135C
OT1130A
OT1130B
OT1135A
OT1135D
OT1120A
OT1120B
rf power transistors
SOT539A
SOT113
SOT1130A
SOT1121A
SOT922-1
SOT1135A
sot1244c
SOT1110B
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UT-141C-25-TP
Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.
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BLF6G13L-250P;
BLF6G13LS-250P
BLF6G13L-250P
6G13LS-250P
UT-141C-25-TP
200B
4350B
800B
UT-141C-35-TP
250WF
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BLF7G20L-90P
Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20L-90P;
BLF7G20LS-90P
ACPR400k
ACPR600k
BLF7G20L-90P
7G20LS-90P
1800 ldmos
BLF7G20LS-90P
RF35
PLW70
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BLF7G20LS-140P
Abstract: 850 SMD Rework Station RF35
Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20LS-140P
ACPR400k
ACPR600k
BLF7G20LS-140P
850 SMD Rework Station
RF35
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
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HITAG 2 algorithm timing
Abstract: HTSH4801ETK HITAG 2 protocol HITAG PROTOCOL AN10214 HITAG s HITAG 2 coding algorithm hitag Transponder ID 48 uv-tape
Text: HITAG µ ISO 18000 transponder IC Rev. 3.0 — 18 March 2010 184430 Product data sheet PUBLIC 1. General description The HITAG product line is well known and established in the contactless identification market. Due to the open marketing strategy of NXP Semiconductors there are various
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uhf pcb antenna
Abstract: UHF rfid antenna RFID loop antenna design nxp proximity antenna design NXP UCODE G2XM Types of Radar Antenna UHF RFID pcb antenna chip antenna rfid UHF FR4 substrate with dielectric constant 4.4 nxp rfid uhf transponder
Text: AN 1715 UHF RFID PCB antenna design Rev. 3.0 – January 21 2010 Application note Document information Info Content Keywords UCODE EPC G2, G2XM, G2XL, Reference Design, Antenna Design, PCB Abstract This application note provides basic antenna knowledge, which is
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Abstract: No abstract text available
Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.
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BLF647P
Abstract: 130005 power transistor
Text: BLF647P; BLF647PS Broadband power LDMOS transistor Rev. 1 — 3 August 2012 Objective data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
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BLF647P;
BLF647PS
BLF647P
130005 power transistor
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sot1121a
Abstract: J226 SMD
Text: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance
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BLF7G21L-160P;
BLF7G21LS-160P
BLF7G21L-160P
7G21LS-160P
sot1121a
J226 SMD
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