philips H1
Abstract: sot539a
Text: PDF: 1999 Dec 09 Philips Semiconductors Package outline Flanged balanced LDMOST package; 2 mounting holes; 4 leads SOT539A Package under development Philips Semiconductors reserves the right to make changes without notice. D A F D1 U1 B q C w2 M C M H1 1 c
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OT539A
philips H1
sot539a
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF power LDMOS transistor Objective specification 1998 Nov 19 Objective specification UHF power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION • Easy power control
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M3D427
BLF2048
OT539A
SCA60
125108/00/02/pp8
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Capacitor Tantal SMD
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Nov 23 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
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M3D427
BLF2048
OT539A)
125108/00/01/pp11
Capacitor Tantal SMD
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Capacitor Tantal SMD
Abstract: capacitor 0,1 k 250 mkt philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
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M3D427
BLF2048
OT539A)
125108/00/01/pp11
Capacitor Tantal SMD
capacitor 0,1 k 250 mkt philips
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PDF
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SOT539A
Abstract: No abstract text available
Text: PDF: 2000 Mar 08 Philips Semiconductors Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT539A
SOT539A
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2222-581
Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain
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M3D427
BLF2048
OT539A
603516/09/pp11
2222-581
capacitor MKT Philips
PHILIPS MKT CAPACITOR
BLF2048
capacitor 400 MKT philips
C26C27
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BLF2022-120
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PINNING - SOT539A FEATURES • High power gain
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M3D427
BLF2022-120
OT539A
603516/09/pp7
BLF2022-120
BP317
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transistor 2201
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 May 31 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
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M3D427
BLF2048
BLF2048
OT539A
125108/00/01/pp8
transistor 2201
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SOT539A
Abstract: No abstract text available
Text: 4 CD FM SOT539A CDFM4; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 29 November 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning
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OT539A
msc071
OT539A
SOT539A
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SOT539
Abstract: No abstract text available
Text: Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L A 3 E w1 M A M B M 4 w3 M b Q e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT539A
OT539A
SOT539
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Capacitor Tantal SMD
Abstract: Tantal SMD transistor SMD 2201
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
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M3D427
BLF2048
OT539A)
125108/00/01/pp12
Capacitor Tantal SMD
Tantal SMD
transistor SMD 2201
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS P relim inary specification UHF power LDMOS transistor BLF2048 FEATURES PINNING - SOT539A • H igh p o w e r ga in PIN DESCRIPTION • E a s y p o w e r c o n tro l 1 d ra in 1 • E x c e lle n t ru g g e d n e s s
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OCR Scan
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BLF2048
OT539A
SCA63
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BLF6G22-180PN
Abstract: No abstract text available
Text: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22-180PN
BLF6G22-180PN
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SOT539A
Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B
Text: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull configuration SOT982A MMIC configuration SOT980A SOT1015BG Bias/temperature sensing Increase the flexibility of application-specific design by using LDMOS RF power
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OT987B
OT895A
OT981A
OT988B
OT896B
OT986B
OT982A
OT980A
OT1015BG
OT538A
SOT539A
SOT975B
SOT540A
SOT538A
sot538b
sot988
SOT608B
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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150P
Abstract: BLF7G27LS-150P ACPR1980 ACPR885
Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-150P;
BLF7G27LS-150P
IS-95
ACPR885k
IS-95
BLF7G27L-150P
7G27LS-150P
150P
BLF7G27LS-150P
ACPR1980
ACPR885
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1800 ldmos
Abstract: SOT539A
Text: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-230PRN
BLF6G20-230PRN
1800 ldmos
SOT539A
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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TRANSISTOR 726
Abstract: 800B BLL6H1214-500 BV 726 B BV 726 C
Text: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information
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BLL6H1214-500
BLL6H1214-500
TRANSISTOR 726
800B
BV 726 B
BV 726 C
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BLF6G20(S)-45
Abstract: No abstract text available
Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-230PRN;
BLF6G20S-230PRN
BLF6G20-230PRN
20S-230PRN
BLF6G20(S)-45
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BLF578
Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
Text: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W
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AN10858
BLF578
BLF578,
AN10858
BLF578
planar transformer theory
DVB-T Schematic
Transmission-Line Conversion Transformers
TIC4000
planar transformer layout
ATC800B101GT500X
ATC800B471JT200X
DVB-T transistor amplifier
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Untitled
Abstract: No abstract text available
Text: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance
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BLF8G24L-200P;
BLF8G24LS-200P
BLF8G24L-200P
LS-200P
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Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
narrow15
BLF888A
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smd transistor L33
Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF879P
smd transistor L33
dvbt transmitter
UT-090C-25
dvb-t2
SMD l33 Transistor
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