RF35
Abstract: No abstract text available
Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF6G27-10;
BLF6G27-10G
ACPR885k
ACPR1980k
BLF6G27-10
BLF6G27-10G
RF35
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TRANSISTOR J601
Abstract: gp816 RF35 J2396 J249
Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance
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BLF6G38-10;
BLF6G38-10G
ACPR885k
ACPR1980k
BLF6G38-10
BLF6G38-10G
TRANSISTOR J601
gp816
RF35
J2396
J249
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BLF7G27LS-100
Abstract: BLF7G27L-100 ACPR1980 BLF7G27 flanged pin
Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-100;
BLF7G27LS-100
ACPR885k
IS-95
IS-95
BLF7G27L-100
7G27LS-100
BLF7G27LS-100
ACPR1980
BLF7G27
flanged pin
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150P
Abstract: BLF7G27LS-150P ACPR1980 ACPR885
Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-150P;
BLF7G27LS-150P
IS-95
ACPR885k
IS-95
BLF7G27L-150P
7G27LS-150P
150P
BLF7G27LS-150P
ACPR1980
ACPR885
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BLF7G20L-90P
Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20L-90P;
BLF7G20LS-90P
ACPR400k
ACPR600k
BLF7G20L-90P
7G20LS-90P
1800 ldmos
BLF7G20LS-90P
RF35
PLW70
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BLF7G24LS
Abstract: BLF7G24L-140 BLF7G24LS-140 nxp semiconductors
Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 1 — 5 August 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance
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BLF7G24L-140;
BLF7G24LS-140
IS-95
ACPR885k
IS-95
BLF7G24L-140
7G24LS-140
BLF7G24LS
BLF7G24LS-140 nxp semiconductors
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BLF7G20LS-140P
Abstract: 850 SMD Rework Station RF35
Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20LS-140P
ACPR400k
ACPR600k
BLF7G20LS-140P
850 SMD Rework Station
RF35
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BLF7G27L-100
Abstract: No abstract text available
Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 01 — 21 April 2010 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-100;
BLF7G27LS-100
IS-95
ACPR885k
IS-95
BLF7G27L-100
7G27LS-100
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J122 SMD TRANSISTOR
Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22L-40BN
J122 SMD TRANSISTOR
BLC6G22L-40BN/2
800B
BLF6G22L-40BN
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BU 0603
Abstract: 800B BLF6G15L 029-KW
Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF6G15L-250PBRN
BU 0603
800B
BLF6G15L
029-KW
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Untitled
Abstract: No abstract text available
Text: BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 01 — 3 May 2010 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF6G27-100;
BLF6G27LS-100
ACPR885k
ACPR1980k
ACPR10M
BLF6G27-100
BLF6G27LS-100
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Untitled
Abstract: No abstract text available
Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-140;
BLF7G27LS-140
IS-95
ACPR885k
BLF7G27L-140
7G27LS-140
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Untitled
Abstract: No abstract text available
Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 3 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance
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BLF7G24L-100;
BLF7G24LS-100
IS-95
ACPR885k
BLF7G24L-100
7G24LS-100
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Untitled
Abstract: No abstract text available
Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance
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BLF7G24L-140;
BLF7G24LS-140
IS-95
ACPR885k
BLF7G24L-140
7G24LS-140
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Untitled
Abstract: No abstract text available
Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF6G15LS-250PBRN
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SmD TRANSISTOR a75
Abstract: No abstract text available
Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20LS-140P
ACPR400k
ACPR600k
SmD TRANSISTOR a75
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Untitled
Abstract: No abstract text available
Text: BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 — 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-90P;
BLF7G27LS-90P
IS-95
ACPR885k
IS-95
BLF7G27L-90P
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Untitled
Abstract: No abstract text available
Text: BLF6G27L-40P; BLF6G27LS-40P Power LDMOS transistor Rev. 1 — 4 July 2011 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF6G27L-40P;
BLF6G27LS-40P
IS-95
ACPR885k
IS-95
BLF6G27L-40P
6G27LS-40P
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Untitled
Abstract: No abstract text available
Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-100;
BLF7G27LS-100
ACPR885k
IS-95
IS-95
BLF7G27L-100
7G27LS-100
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Untitled
Abstract: No abstract text available
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22L-40BN
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Untitled
Abstract: No abstract text available
Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-140;
BLF7G27LS-140
ACPR885k
IS-95
IS-95
BLF7G27L-140
7G27LS-140
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Untitled
Abstract: No abstract text available
Text: BLS7G2325L-105 Power LDMOS transistor Rev. 2 — 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLS7G2325L-105
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Untitled
Abstract: No abstract text available
Text: BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 4 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF6G27-45;
BLF6G27S-45
ACPR885k
ACPR1980k
BLF6G27-45
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transistor BV-1 501
Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 — 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.
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BLF6G38-50;
BLF6G38LS-50
ACPR885k
ACPR1980k
BLF6G38-50
BLF6G38LS-50
transistor BV-1 501
smd 501 transistor
C5750X7R1H106M
30RF35
RF35
VJ1206Y104KXB
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