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    BLF8G24L-200P Search Results

    BLF8G24L-200P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71V25761S200PFGI Renesas Electronics Corporation 3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O Visit Renesas Electronics Corporation
    71V2558XS200PF8 Renesas Electronics Corporation 256K X 18 2.5V I/O ZBT PB Visit Renesas Electronics Corporation
    71V35741S200PFG8 Renesas Electronics Corporation 4M PBSRAM FAST Visit Renesas Electronics Corporation
    71V3558S200PFG8 Renesas Electronics Corporation 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O Visit Renesas Electronics Corporation
    72V70200PFG Renesas Electronics Corporation 512 x 512 TSI, 16 I/O at 2Mbps, 3.3V Visit Renesas Electronics Corporation
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    BLF8G24L-200P Price and Stock

    NXP Semiconductors BLF8G24L-200P,112

    N-CHANNEL; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 37 A; Maximum Operating Temperature: 200 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 37 A;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian BLF8G24L-200P,112 45
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    BLF8G24L-200P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF8G24L-200P,112 NXP Semiconductors BLF8G24L-200P - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF8G24L-200P,118 NXP Semiconductors BLF8G24L-200P - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF