Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged LDMOST ceramic package; 6 leads SOT1120B D A F 3 D1 L D c U1 1 4 5 y α H Z2 U2 Z1 Z 6 E1 E 7 2 b1 b w2 5 A max 4.75 nom min 3.45 mm 10 mm scale Dimensions Unit 1 Q D b1 1.83 12.83 0.18 20.02 19.96 9.53 9.53 1.14 19.94 3.56
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OT1120B
OT1120B
sot1120b
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Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged LDMOST ceramic package; 6 leads SOT1120B D A F 3 D1 L D c U1 1 4 5 y α H Z2 U2 Z1 Z 6 E1 E 7 2 b1 b w2 5 A max 4.75 nom min 3.45 mm 10 mm scale Dimensions Unit 1 Q D b1 1.83 12.83 0.18 20.02 19.96 9.53 9.53 1.14 19.94 3.56
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OT1120B
sot1120b
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rf power transistors
Abstract: SOT539A SOT113 SOT1130A SOT1121A SOT922-1 SOT1135A sot1244c SOT1110B
Text: Ceramic packages for RF Power Transistors 1 SOT467B SOT467C SOT1135B SOT1135C SOT1130A SOT1130B SOT1135A SOT1135D SOT1120A SOT1120B SOT1121A SOT1121B SOT1121C SOT1121D SOT1112A SOT1112B Ceramic packages for RF Power Transistors (2) SOT1110A SOT1110B SOT1117A
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OT467B
OT467C
OT1135B
OT1135C
OT1130A
OT1130B
OT1135A
OT1135D
OT1120A
OT1120B
rf power transistors
SOT539A
SOT113
SOT1130A
SOT1121A
SOT922-1
SOT1135A
sot1244c
SOT1110B
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RO4350B max current
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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RO4350B max current
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 3 — 21 January 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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Untitled
Abstract: No abstract text available
Text: BLF8G19LS-170BV Power LDMOS transistor Rev. 2 — 28 March 2013 Product data sheet 1. Product profile 1.1 General description 170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.
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BLF8G27LS-140V
Abstract: SOT1120B
Text: BLF8G27LS-140V Power LDMOS transistor Rev. 2 — 27 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.
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Excelle10
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1206 PHILIPS
Abstract: transistor 86
Text: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.
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BLF8G22LS-160BV
excell11
1206 PHILIPS
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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sot979
Abstract: No abstract text available
Text: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)
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OT467B
OT467C
OT1228A
OT1228B
OT608A
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Bv 42 transistor
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 2 — 12 October 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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BLF8G27LS-140V
Abstract: No abstract text available
Text: BLF8G27LS-140V Power LDMOS transistor Rev. 1 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1.
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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BLF8G22LS-310AV
Abstract: BLP8G07S-140P BLP8G10S-230 SOT12 BLP8G09S-140P q113 BLF8G27LS-60A Gen8A BLF8G10LS-400PV LTE base station
Text: NXP Gen8 LDMOS RF power Gen8: the next generation of LDMOS RF power for wireless infrastructures This groundbreaking new version of NXP’s proven LDMOS process increases Doherty efficiency by as much as three points and improves gain by as much as 1 dB. Key features
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OT502-sized
OT539-sized
BLF8G22LS-310AV
BLP8G07S-140P
BLP8G10S-230
SOT12
BLP8G09S-140P
q113
BLF8G27LS-60A
Gen8A
BLF8G10LS-400PV
LTE base station
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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Abstract: No abstract text available
Text: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.
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