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Vishay Siliconix SIRA06DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIRA06DP-T1-GE3	Cut Tape	731		1	1 $1.72 10 $1.089 100 $1.72 1000 $0.52593 10000 $0.52593	Buy Now
	SIRA06DP-T1-GE3	Digi-Reel	731		1	1 $1.72 10 $1.089 100 $1.72 1000 $0.52593 10000 $0.52593	Buy Now
	SIRA06DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.46297	Buy Now
RS	SIRA06DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1.25	Get Quote
Vishay Intertechnologies SIRA06DP-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 68W7081)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIRA06DP-T1-GE3	Ammo Pack		15 Weeks, 3 Days	1	1 $0.646 10 $0.646 100 $0.646 1000 $0.646 10000 $0.646	Buy Now
	SIRA06DP-T1-GE3	Reel		17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.4182	Buy Now
Mouser Electronics	SIRA06DP-T1-GE3		1,632			1 $1.49 10 $0.999 100 $0.709 1000 $0.537 10000 $0.425	Buy Now
Verical	SIRA06DP-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.3775	Buy Now
Newark	SIRA06DP-T1-GE3	Cut Tape	249		1	1 $0.154 10 $0.154 100 $0.154 1000 $0.154 10000 $0.154	Buy Now
	SIRA06DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.453	Buy Now
Bristol Electronics	SIRA06DP-T1-GE3		975			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Quest Components	SIRA06DP-T1-GE3		780			1 $1.52 10 $1.52 100 $0.76 1000 $0.608 10000 $0.608	Buy Now
	SIRA06DP-T1-GE3		780			1 $1.52 10 $1.52 100 $0.76 1000 $0.608 10000 $0.608	Buy Now
TTI	SIRA06DP-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.403	Buy Now
TME	SIRA06DP-T1-GE3				1	1 $1.027 10 $0.85 100 $0.642 1000 $0.489 10000 $0.431	Get Quote
EBV Elektronik	SIRA06DP-T1-GE3			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIRA06DPT1GE3 N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIRA06DPT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SIRA06DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SIRA06DP-T1-GE3		140,500			1 - 10 - 100 - 1000 $0.295 10000 $0.264	Buy Now

SIRA06DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIRA06DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A SO8 PWR PK		Original	PDF

SIRA06DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	PDF	SiRA06DP SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	PDF	SiRA06DP 2002/95/EC SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiRA06DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiRA06DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiRA06DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiRA06DP AN609, 7147m 0050m 2770m 2112m 2966u 6358m 2966m 8532n
Untitled Abstract: No abstract text available Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	PDF	SiRA06DP SiRA06DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	PDF	SiRA06DP SiRA06DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	PDF	SiRA06DP 2002/95/EC SiRA06DP-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	PDF	SiRA06DP SiRA06DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	PDF	SiRA06DP 2002/95/EC SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	PDF	SiRA06DP SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	PDF	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	PDF	VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
POWERPAK SO8 Abstract: SIS32 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	PDF	SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32

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Vishay Siliconix SIRA06DP-T1-GE3

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SIRA06DP Datasheets (1)

SIRA06DP Datasheets Context Search

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PowerPAK 1212-8

si7121

POWERPAK SO8