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    2112M Search Results

    2112M Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TPS62112MRSAREP Texas Instruments Enhanced Product 17 V, 1.5 A, Synchronous Step-Down Converter 16-QFN -55 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    2112M Price and Stock

    Jamicon Corporation 712211-2MAC

    TERMINAL STW CONNECTOR, TOP
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    DigiKey 712211-2MAC Cut Tape 16,375 1
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    Diodes Incorporated AP2112M-3.3TRG1

    IC REG LINEAR 3.3V 600MA 8SOIC
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    DigiKey AP2112M-3.3TRG1 Cut Tape 16,286 1
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    AP2112M-3.3TRG1 Digi-Reel 16,286 1
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    AP2112M-3.3TRG1 Reel 12,000 4,000
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    Mouser Electronics AP2112M-3.3TRG1 4,564
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    TME AP2112M-3.3TRG1 1
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    Avnet Silica AP2112M-3.3TRG1 4,000 22 Weeks 4,000
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    New Advantage Corporation AP2112M-3.3TRG1 8,000 1
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    Pulse Electronics Corporation RAZ42112MM

    RF ANT 802MHZ/1.582GHZ MOD MAGNT
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    DigiKey RAZ42112MM Bulk 6 1
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    Avnet Americas RAZ42112MM Bag 16 Weeks 22
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    Master Electronics RAZ42112MM
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    Sager RAZ42112MM 1
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    OMRON Industrial Automation E32-D211-2M

    SENSOR REFLECTIVE 80MM 2M
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    DigiKey E32-D211-2M Bulk 1 1
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    JRH Electronics 360HB001M2112M

    CONN BACKSHELL
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    DigiKey 360HB001M2112M Bulk 1
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    2112M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ATTENUATORS 2.9mm, DC - 18 GHz, 2 Watts SPECIFICATIONS: Models: 2112M/012, 2112F/012, 2112M/036, 2112F/036 Electrical: Frequency Range Available dB Values DC - 18 GHz 0 - 12 dB In 1 dB Increments Attenuation Accuracy 0 - 6 dB 7 - 12 dB VSWR DC - 4 GHz 4 - 12.4 GHz


    Original     		PDF 2M/01 2F/01 2M/036, 2F/036 2M/36-10

    Untitled

    Abstract: No abstract text available
    Text: ATTENUATORS 2.9mm, DC - 18 GHz, 2 Watts SPECIFICATIONS: Models: 2112M/012, 2112F/012, 2112M/036, 2112F/036 Electrical: Frequency Range Available dB Values DC - 18 GHz 0 - 12 dB In 1 dB Increments Attenuation Accuracy 0 - 6 dB 7 - 12 dB VSWR DC - 4 GHz 4 - 12.4 GHz


    Original     		PDF 2112M/012, 2112F/012, 2112M/036, 2112F/036 2112F/12-6 2112M/36-10 2112X/XX-XX REV5214:

    Untitled

    Abstract: No abstract text available
    Text: ATTENUATORS 2.9mm, DC - 18 GHz, 2 Watts SPECIFICATIONS: Models: 2112M/012, 2112F/012, 2112M/036, 2112F/036 Electrical: Frequency Range Available dB Values DC - 18 GHz 0 - 12 dB In 1 dB Increments Attenuation Accuracy 0 - 6 dB 7 - 12 dB VSWR DC - 4 GHz 4 - 12.4 GHz


    Original     		PDF 2112M/012, 2112F/012, 2112M/036, 2112F/036 2112F/12-6 2112M/36-10 2112X/XX-XX

    MT29F4G08ABADAWP

    Abstract: Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08
    Text: Micron Confidential and Proprietary 4Gb, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,


    Original     		PDF MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F4G08ABADAWP Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08

    800H

    Abstract: HN29V51211 HN29V51211T-50
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    48-pin TSOP

    Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001


    Original     		PDF K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0 48-pin TSOP K9K2G08U0M 48-pin TSOP (I) flash memory samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G16Q0M-Y

    800H

    Abstract: HN29V51211T-50H
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MS29C4G48MAZAKC1-XX 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.


    Original     		PDF MS29C4G48MAZAKC1-XX MT29C4G48MAZAPACA-XIT"

    AH10T

    Abstract: hn29w12811t-50 Hitachi DSA00170
    Text: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル


    Original     		PDF HN29W12811 029-sector 984-bit) ADJ-203-551A 50/80ns HN29W12811T-50 HN29W12811T-80 AH10T hn29w12811t-50 Hitachi DSA00170

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		PDF K9K2G08U0A K9K2G08U0A-Y K9K2G08U0A-V K9K2G08U0A

    Hitachi DSA00281

    Abstract: No abstract text available
    Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are


    Original     		PDF HN29W25611 057-sector 072-bit) ADE-203-995C D-85622 Hitachi DSA00281

    AP2112

    Abstract: Linear Regulator sot-89-5 marking g3p G37F voltage regulator sot-89-5 AP2112K marking g3n
    Text: Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2112 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA min. continuous load current. • • • • • The AP2112 provides 1.2V, 1.8V, 2.5V, 2.6V, 2.8V


    Original     		PDF 600mA AP2112 600mA OT-23-5, OT-89-5, AP2112 Linear Regulator sot-89-5 marking g3p G37F voltage regulator sot-89-5 AP2112K marking g3n

    Marking g3p

    Abstract: G37F marking g3N voltage regulator sot-89-5 R5 SOT mark R5A g33c
    Text: Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2112 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA min. continuous load current. • • • •


    Original     		PDF 600mA AP2112 600mA OT-23-5, OT-89-5, AP2112 Marking g3p G37F marking g3N voltage regulator sot-89-5 R5 SOT mark R5A g33c

    800H

    Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
    Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


    Original     		PDF HN29V102414 113-sector 248-bit) ADE-203-1265A 800H HN29V102414T-50 Hitachi DSA0047

    BNC 7044

    Abstract: mini Audio 5709 7043 BNC INMET 64671 26AH TN180-50W 5205/AU attenuation 3dB DC 18GHz BNC Matching T CA 5210 PL F/5057
    Text: Short Form Catalog Microwave, Wireless and Broadband Components www.aeroflex-inmet.com Attenuators Adapters Bias Tees DC Blocks Gain Equalizers Terminations Table of Contents Company Profile . Attenuators .


    Original     		PDF

    MT29F4G08

    Abstract: MT29F4G16 MT29F4G08abada MT29F8G16 MT29F8G08 MT29F8G16ADBDA MT29F4G16ABADAH4 MT29F4G08ABADAH Micron MT29F8G MT29F4G08ABADAH4
    Text: Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,


    Original     		PDF MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F4G08 MT29F4G16 MT29F4G08abada MT29F8G16 MT29F8G08 MT29F8G16ADBDA MT29F4G16ABADAH4 MT29F4G08ABADAH Micron MT29F8G MT29F4G08ABADAH4

    K9F2G08U0M-PCB0

    Abstract: 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M
    Text: K9K4G08U1M K9F2G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K4G08U1M K9F2G08U0M K9XXG08UXM 200mV K9F2G08U0M-PCB0 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M

    800H

    Abstract: M5M29F25611VP SA10 MITSUBISHI GATE ARRAY mitsubishi S-A11
    Text: MITSUBISHI LSIs M5M29F25611VP MORE THAN 16,057 SECTORS 271,299,072 BITS CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities


    Original     		PDF M5M29F25611VP M5M29F25611 800H M5M29F25611VP SA10 MITSUBISHI GATE ARRAY mitsubishi S-A11

    K9F2G08X0M

    Abstract: K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G08U0M K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application
    Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34


    Original     		PDF K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M K9F2G08Q0M K9F2G08U0M K9F2G08X0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application

    mt29f4g08abadawp

    Abstract: MT29F4G08ABADAH4 MT29F4G08abada MT29F8G16 MT29F4G16 MT29F8G16ADBDAH4 Micron MT29F8G08 MT29F4G16ABADAH4 MT29F4G16ABADAWP MT29F4G16ABBDAHC
    Text: Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,


    Original     		PDF MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, mt29f4g08abadawp MT29F4G08ABADAH4 MT29F4G08abada MT29F8G16 MT29F4G16 MT29F8G16ADBDAH4 Micron MT29F8G08 MT29F4G16ABADAH4 MT29F4G16ABADAWP MT29F4G16ABBDAHC

    800H

    Abstract: HN29V25611A HN29V25611AT-50 D2111
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    nand hamming code 2k bytes

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34


    Original     		PDF K9K4G08U1M K9F2G08U0M K9F2G16U0M 9F2G08U0M nand hamming code 2k bytes

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


    Original     		PDF HN29V51211 113-sector 248-bit) ADE-203-1221A D-85622 Hitachi DSA00276

    Untitled

    Abstract: No abstract text available
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001


    Original     		PDF K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0