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    SIRA06DP Price and Stock

    Vishay Siliconix SIRA06DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIRA06DP-T1-GE3 Digi-Reel 577 1
    • 1 $1.08
    • 10 $0.813
    • 100 $0.6967
    • 1000 $0.52593
    • 10000 $0.52593
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    SIRA06DP-T1-GE3 Cut Tape 577 1
    • 1 $1.08
    • 10 $0.813
    • 100 $0.6967
    • 1000 $0.52593
    • 10000 $0.52593
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    SIRA06DP-T1-GE3 Reel 3,000
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    • 10000 $0.425
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    RS SIRA06DP-T1-GE3 Bulk 3,000
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    • 10000 $1.25
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    Vishay Intertechnologies SIRA06DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 68W7081)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas () SIRA06DP-T1-GE3 Ammo Pack 15 Weeks, 3 Days 1
    • 1 $0.67
    • 10 $0.67
    • 100 $0.67
    • 1000 $0.67
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    SIRA06DP-T1-GE3 Reel 16 Weeks 3,000
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    • 10000 $0.4182
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    Mouser Electronics SIRA06DP-T1-GE3 1,564
    • 1 $0.96
    • 10 $0.763
    • 100 $0.675
    • 1000 $0.532
    • 10000 $0.425
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    Newark () SIRA06DP-T1-GE3 Cut Tape 249 1
    • 1 $0.154
    • 10 $0.154
    • 100 $0.154
    • 1000 $0.154
    • 10000 $0.154
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    SIRA06DP-T1-GE3 Reel 3,000
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    • 10000 $0.453
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    Bristol Electronics SIRA06DP-T1-GE3 975
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    Quest Components () SIRA06DP-T1-GE3 780
    • 1 $1.52
    • 10 $1.52
    • 100 $0.76
    • 1000 $0.608
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    SIRA06DP-T1-GE3 780
    • 1 $1.52
    • 10 $1.52
    • 100 $0.76
    • 1000 $0.608
    • 10000 $0.608
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    TTI SIRA06DP-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.388
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    TME SIRA06DP-T1-GE3 1
    • 1 $1.013
    • 10 $0.838
    • 100 $0.633
    • 1000 $0.482
    • 10000 $0.433
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    Rutronik SIRA06DP-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.2833
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    EBV Elektronik SIRA06DP-T1-GE3 17 Weeks 3,000
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    Vyrian SIRA06DP-T1-GE3 2,664
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    Vishay Intertechnologies SIRA06DPT1GE3

    N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIRA06DPT1GE3 3,000
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    Vishay Huntington SIRA06DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIRA06DP-T1-GE3 140,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.4425
    • 10000 $0.396
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    SIRA06DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA06DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A SO8 PWR PK Original PDF

    SIRA06DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP 2002/95/EC SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SPICE Device Model SiRA06DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiRA06DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiRA06DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiRA06DP AN609, 7147m 0050m 2770m 2112m 2966u 6358m 2966m 8532n PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP SiRA06DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP SiRA06DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP 2002/95/EC SiRA06DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP SiRA06DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP 2002/95/EC SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 PDF

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    POWERPAK SO8

    Abstract: SIS32
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32 PDF