Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
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Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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S-49534
Abstract: Si6543DQ
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 30 P-Channel rDS(on) (W) D1 S2 TSSOP-8 8
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Si6543DQ
S-49534--Rev.
06-Oct-97
S-49534
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Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
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Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si6543DQ Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8
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Si6543DQ
S-49534--Rev.
06-Oct-97
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Si6543DQ
Abstract: No abstract text available
Text: Si6543DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8 D1 S1 S1 G1
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Si6543DQ
S-47958--Rev.
15-Apr-96
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Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 30 P-Channel rDS(on) (W) D1 S2 TSSOP-8 8
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Si6543DQ
08-Apr-05
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S-49534
Abstract: Si6543DQ
Text: Si6543DQ Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8 D1 S1 S1 G1
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Si6543DQ
S-49534--Rev.
06-Oct-97
S-49534
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Si6543DQ
Abstract: Si6543DQ-T1
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
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Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
18-Jul-08
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AN609
Abstract: Si6543DQ
Text: Si6543DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6543DQ
AN609
02-Jul-07
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Si6543DQ
Abstract: No abstract text available
Text: Si6543DQ Siliconix Dual EnhancementĆMode MOSFET NĆ and PĆChannel Product Summary VDS (V) NĆChannel 30 PĆChannel -30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = -10 V "2.5 0.19 @ VGS = -4.5 V "1.8 D1 S2 TSSOPĆ8
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Si6543DQ
S42162Rev.
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Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
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Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si6543DQ
Abstract: No abstract text available
Text: Si6543DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8 D1 S1 S1 G1
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Si6543DQ
S-47958--Rev.
15-Apr-96
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55c diode
Abstract: Si6543DQ S-47958-Rev
Text: Si6543DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8 D1 S1 S1 G1
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Si6543DQ
Maximu10
S-47958--Rev.
15-Apr-96
55c diode
S-47958-Rev
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Si4539DY
Abstract: Si6543DQ Si9939DY
Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V
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Si9939DY
Si4539DY
Si6543DQ
S-51308--Rev.
13-Dec-96
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
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2N7000
2N7002
2N7002E
2N7002K
2SJ574
2SK3240
BS170
BSH108
BSS123
BSS138
Siliconix
Siliconix mosfet guide
siliconix VN10KM
Power MOSFET Cross Reference Guide
FDC6323L
fdn5618p
2n7002 siliconix
BS170
equivalent of BS170
VN10KM equivalent
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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SI9952DY
Abstract: SI9952 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
Text: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY
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Si9952DY
Si4532DY
Si4539DY
Si9939DY
Si6542DQ
Si6543DQ
S-47958--Rev.
15-Apr-96
SI9952
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Si4539DY
Abstract: Si6543DQ Si9939DY
Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V
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Si9939DY
Si4539DY
Si6543DQ
S-47958--Rev.
15-Apr-96
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Untitled
Abstract: No abstract text available
Text: Tem ic Si6543DQ Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) N-Channel 30 P-Channel 30 rD S(on ) ( Q ) Id (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGs = -10 V ±2.5 0.19 @ VGs = -4.5 V ±1.8 Di Q
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Si6543DQ
i6543D
S-49534â
06-Oct-97
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GS 069
Abstract: No abstract text available
Text: Temic SÌ9952DY S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V D S(V ) 25 N-Channel P-Channel I d (A ) r DS(on) (£2) -25 0 .1 0 @ V GS = 10V ± 3 .5 0.15 @ VGS = 4.5 V ± 2 .0 0.25 @ V gs = -1 0 V ± 2 .3 0.40 @ V gs = -4 .5 V
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9952DY
S14532DY,
Si4539DY
Si9939DY
Si6542DQ
Si6543DQ
S-47958--
15-Apr-96
GS 069
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Untitled
Abstract: No abstract text available
Text: 7? tv u J 6 olZ'&Q. . —/ _ SÌ99S8DY Dual Enhancement-Mode MOSFET N- and P- Channel Product Summary V d s (V) N-Channel 20 P-Channel -20 I d (A) ±3.5 ±3 ±2.5 ±3.5 ±3 ±2.5 rDS(on) (&) 0.10 @ VGS = 10 v 0.12 @ VGs = 6 V
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99S8DY
Si4532DY
Si4539DY
Si6543DQ
S-47958--Rev.
15-Apr-96
9958DY
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Si6543DQ
Abstract: No abstract text available
Text: Temic SÌ6543DQ Se m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V u s (V ) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ Vos = -10 V ±2.5 0.19 @ V(jS = -4.5 V
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OCR Scan
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6543DQ
150aC
S-49534--
06-Oct-97
06-0ct
Si6543DQ
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