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    Vishay Siliconix SI9939DY

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    SILI SI9939DY-T1

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    SI9939DY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9939DY Siliconix Dual Enhancement-Mode MOSFET (N- and P-Channel) Original PDF
    Si9939DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si9939DY Vishay Intertechnology Complimentary 30-V (D-S) MOSFET Original PDF
    SI9939DY Vishay Telefunken Complimentary 30-v (d-s) Mosfet Original PDF

    SI9939DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4539DY

    Abstract: Si6543DQ Si9939DY
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


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    PDF Si9939DY Si4539DY Si6543DQ S-51308--Rev. 13-Dec-96

    Si4539DY

    Abstract: Si6543DQ Si9939DY 51308
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


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    PDF Si9939DY Si4539DY Si6543DQ S-51308--Rev. 13-Dec-96 51308

    SI9952DY

    Abstract: SI9952 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
    Text: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY


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    PDF Si9952DY Si4532DY Si4539DY Si9939DY Si6542DQ Si6543DQ S-47958--Rev. 15-Apr-96 SI9952

    Si4539DY

    Abstract: Si6543DQ Si9939DY
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


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    PDF Si9939DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96

    SI9952DY

    Abstract: SI9952 70137 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
    Text: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY


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    PDF Si9952DY Si4532DY Si4539DY Si9939DY Si6542DQ Si6543DQ S-47958--Rev. 15-Apr-96 SI9952 70137

    SI9952DY

    Abstract: SI9952 n-channel mosfet transistor P-channel power mosfet SO-8 SI4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
    Text: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY


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    PDF Si9952DY Si4532DY Si4539DY Si9939DY Si6542DQ Si6543DQ S-47958--Rev. 15-Apr-96 SI9952 n-channel mosfet transistor P-channel power mosfet SO-8

    Si9939DY

    Abstract: No abstract text available
    Text: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V


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    PDF Si9939DY S-00652--Rev. 27-Mar-00

    Si9939DY

    Abstract: No abstract text available
    Text: Si9939DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = -10 V "3.5 0.12 @ VGS = -6V "3 0.16 @ VGS = -4.5 V


    Original
    PDF Si9939DY S-42910--Rev.

    Si4539DY

    Abstract: Si6543DQ Si9939DY
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


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    PDF Si9939DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96

    Si9939DY

    Abstract: No abstract text available
    Text: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V


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    PDF Si9939DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V


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    PDF Si9939DY 08-Apr-05

    Si4532DY

    Abstract: Si4539DY Si9928DY Si9939DY Si9942DY Si9958DY P-channel
    Text: Transistors Siliconix Complementary LITTLE FOOTR Devices 8-Pin SOIC Maximum Ratings rDS(on) (W) Part Number VDS (V) VGS = "10 V Si9928DY VGS = "2.7 V ID (A) Configuration 0.05 0 11 0.11 0.08 0 19 0.19 "5 "3.4 34 N-Channel P Ch P-Channel l 0.125 0.2 0.25


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    PDF Si9928DY Si9958DY Si4539DY Si9942DY Si9939DY Si4532DY P-channel

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


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    PDF AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    2n7000 complement

    Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
    Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put


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    PDF AN804 VP0300L O226AA VN0300L TP0610L 2N7000 VP2020L 2n7000 complement VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


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    PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    P-Channel TrenchFET Power MOSFET SOT-23

    Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
    Text: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other


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    PDF Si4467DY Si6465DQ Si4463DY Si6969DQ Si9434DY Si9433DY Si4425DY Si4435DY-RevA Si9430DY Si9435DY P-Channel TrenchFET Power MOSFET SOT-23 TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: Temic Silicon»:_ S.9939DY D ual E nhancem ent-M ode M O SFETs N- and P-Channel Product Summary V d s (V) rDS(on) ( ß ) I d (A) 0.05 @ VGS = 10 V ±3.5 0.07 @ VGs = 6 V ±3 0.08 @ VGs = 4.5 V ±2.5 0.10 @ VGs = - ±3.5 30 iov 0.12 @ VGS = —6V


    OCR Scan
    PDF 9939DY S-42910--

    GS 069

    Abstract: No abstract text available
    Text: Temic SÌ9952DY S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V D S(V ) 25 N-Channel P-Channel I d (A ) r DS(on) (£2) -25 0 .1 0 @ V GS = 10V ± 3 .5 0.15 @ VGS = 4.5 V ± 2 .0 0.25 @ V gs = -1 0 V ± 2 .3 0.40 @ V gs = -4 .5 V


    OCR Scan
    PDF 9952DY S14532DY, Si4539DY Si9939DY Si6542DQ Si6543DQ S-47958-- 15-Apr-96 GS 069

    p-channel

    Abstract: Si4558DY
    Text: Tem ic Semiconductors S08 SOT23 TO39 DIP14 LITTLE FOOT continued •. y :'-* r }y if. Part Number Complementary LITTLE FOOT® Devices (SOIC 8) V a s* d t2 .7 V Id (A) GosflgnratioB 0.04 0.074 0.08 0.19 6 5 ±5 ±3.4 ±2.5 ±3 ±3.5 ±3.5 3.5 2.3 ±5.8


    OCR Scan
    PDF DIP14 Si9529DY Si9928DY Si9942DY Si9958DY Si9952DY Si4558DY Si4949EY Si9939DY Si4532DY p-channel