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    S1409 Search Results

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    S1409 Price and Stock

    Century Spring Corp S-1409CS

    COMPRESSION STEEL 0.468" 0.500"
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    DigiKey S-1409CS Box 1,957
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    Analog Devices Inc ADGS1409BCPZ

    IC MUX DUAL 4:1 4.7OHM 24LFCSP
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    DigiKey ADGS1409BCPZ Tray 71 1
    • 1 $15.31
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    Mouser Electronics ADGS1409BCPZ 337
    • 1 $15.31
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    • 100 $8.6
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    Newark ADGS1409BCPZ Bulk 104 1
    • 1 $14.85
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    Analog Devices Inc ADGS1409BCPZ 2,056
    • 1 $16.3
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    Rochester Electronics ADGS1409BCPZ 200 1
    • 1 $8.97
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    Richardson RFPD ADGS1409BCPZ 77
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    Lapp Group S1409

    CABLE GLAND 2-5.84MM PG9
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    DigiKey S1409 Bulk 100
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    RS S1409 Bulk 100
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    OMRON Industrial Automation MS4800S-14-0920

    LIGHT CURTAIN FINGER 14MM
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    DigiKey MS4800S-14-0920 Bulk
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    OMRON Industrial Automation MSF4800S-14-0920

    LIGHT CURTAIN FINGER 14MM
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    DigiKey MSF4800S-14-0920 Bulk
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    S1409 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S14090G Faraday Technology Active Filter: Lowpass: DR00014A Original PDF
    S14095G Faraday Technology Active Filter: Lowpass: DR00014A Original PDF

    S1409 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)


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    SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    s1409

    Abstract: murata REEL label lot number SKY65050-372LF
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65050-372LF Block Diagram


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    SKY65050-372LF: SC-70 J-STD-020) SKY65050-372LF 200967D s1409 murata REEL label lot number PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    SiR640ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8461DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si8461DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SKY65050-372LF

    Abstract: S1408 S1410 VT47 S1417
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram


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    SKY65050-372LF: SKY65050-372LF 200967E S1408 S1410 VT47 S1417 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.0267 RDS(on) (Ω) at VGS = 4.5 V 0.0290 ID (A) per leg 23 Configuration Dual TrenchFET power MOSFET


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    SQJ956EP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) MAX. ID (A) a 0.126 at VGS = 10 V 3.1 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (TYP.) 2.9 nC SOT-23 (TO-236) • TrenchFET power MOSFET


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    Si2392ADS OT-23 O-236) Si2392ADS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si8469DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    crimper CT 3508

    Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
    Text: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.


    Original
    PDF

    HX8369

    Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
    Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010


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    HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A PDF

    Untitled

    Abstract: No abstract text available
    Text: SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.0267 RDS(on) (Ω) at VGS = 4.5 V 0.0290 ID (A) per leg 23 Configuration Dual TrenchFET power MOSFET


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    SQJ956EP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.047 at VGS = -4.5 V -4 0.080 at VGS = -2.7 V -4 0.090 at VGS = -2.5 V • TrenchFET power MOSFET Qg (TYP.) • PWM optimized


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    Si3443DDV Si3443DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) d 0.0062 at VGS = -10 V -25.3 VDS (V) -30 0.0074 at VGS = -6 V -23.2 0.0092 at VGS = -4.5 V -20.8 Qg (TYP.) 54 nC SO-8 Single D 8 D 7 D 6


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    Si4143DY Si4143DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    s2513

    Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
    Text: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing


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    P-2631996 E146370 LR50370-10 SKINTOP00 s2513 MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438 PDF

    schematic diagram receiver satellite

    Abstract: SKY65050-372LF murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram


    Original
    SKY65050-372LF: SKY65050-372LF 200967F schematic diagram receiver satellite murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested


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    Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested


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    Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


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    9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 PDF

    S14020G

    Abstract: S14025G S14030G S14035G S14045G S14050G S14055G S14060G S14065G S14070G
    Text: S14 SERIES GENERAL PURPOSE LP FILTER STEEPNESS FACTOR 1.40 This range of 7-pole Elliptical Function Low Pass Filters is intended for bandwidth limitation with minimal distortion of the transmitted signal. The filters are corrected for Group Delay distortion over approx. 92% of


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    S14020G S14025G S14030G S14035G S14040G S14045G S14050G S14055G S14060G S14065G S14020G S14025G S14030G S14035G S14045G S14050G S14055G S14060G S14065G S14070G PDF

    SI8821EDB

    Abstract: No abstract text available
    Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC


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    Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)


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    SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    UTM ceramic RESISTOR 212-3

    Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
    Text: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components


    OCR Scan
    PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan
    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R - B R O W N <i [ OPA689 ] Wideband, High Gain VOLTAGE LIMITING AMPLIFIER APPLICATIONS FEATURES • FAST RECOVERY FROM OVERDRIVE: 2.4ns TRANSIMPEDANCE WITH FAST OVERDRIVE RECOVERY • LIMITING VOLTAGE ACCURACY: ±15mV FAST LIMITING ADC INPUT DRIVER


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    OPA689 280MHz OPA688 OPA689 PDF