SI8469DB Search Results
SI8469DB Price and Stock
Vishay Siliconix SI8469DB-T2-E1MOSFET P-CH 8V 4.6A 4MICROFOOT |
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SI8469DB-T2-E1 | Reel |
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Vishay Intertechnologies SI8469DBT2E1P-CHANNEL 8 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4.6A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8469DBT2E1 | 3,000 |
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Vishay Intertechnologies SI8469DB-T2-E1PCHANNEL 8V DS MOSFET (Alt: SI8469DB-T2-E1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8469DB-T2-E1 | 143 Weeks | 3,000 |
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SI8469DB Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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| SI8469DB-T2-E1 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3.6A MICRO | Original |
SI8469DB Datasheets Context Search
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Contextual Info: Si8469DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si8469DB AN609, 9755u 4849u 0393m 1634m 0148u 1583m 6626m 19-Oct-10 | |
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Contextual Info: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21 |
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Si8469DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si8469DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si8469DB www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY -8 • TrenchFET power MOSFET RDS(on) (Ω) ID (A) a, e 0.064 at VGS = -4.5 V -4.6 0.076 at VGS = -2.5 V -4.2 0.115 at VGS = -1.5 V -3.4 0.180 at VGS = -1.2 V -1.2 |
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Si8469DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si8469Contextual Info: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21 |
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Si8469DB 2002/95/EC 11-Mar-11 si8469 | |
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Contextual Info: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21 |
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Si8469DB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
67370Contextual Info: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si8469DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67370 | |
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Contextual Info: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21 |
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Si8469DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI-8100D
Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
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Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB | |
SI1489EDHContextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems |
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SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
SiB914
Abstract: SiA427DJ si2329ds si8802
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SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm |
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Si8489EDB Si8902AEDB VMN-PT0107-1402 |