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    Vishay Siliconix SI1489EDH-T1-GE3

    MOSFET P-CH 8V 2A SOT-363
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    DigiKey () SI1489EDH-T1-GE3 Reel
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    SI1489EDH-T1-GE3 Digi-Reel 1
    • 1 $0.43
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    Vishay BLH SI1489EDH-T1-GE3

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    Bristol Electronics SI1489EDH-T1-GE3 5,710 5
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    Vishay Intertechnologies SI1489EDH-T1-GE3

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    Quest Components SI1489EDH-T1-GE3 4,568
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    EBV Elektronik SI1489EDH-T1-GE3 143 Weeks 3,000
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    SI1489EDH Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1489EDH-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 2A SOT-363 Original PDF

    SI1489EDH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI1489EDH

    Contextual Info: SPICE Device Model Si1489EDH www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si1489EDH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI1489EDH

    Contextual Info: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5


    Original     		Si1489EDH 2002/95/EC OT-363 SC-70electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    marking code BS

    Abstract: SI1489EDH
    Contextual Info: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5


    Original     		Si1489EDH 2002/95/EC OT-363 SC-70 11-Mar-11 marking code BS PDF

    Contextual Info: Si1489EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si1489EDH AN609, 6019u 9400m 6557m 9369u 3654m 1823m 6889m PDF

    SI1489EDH

    Contextual Info: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5


    Original     		Si1489EDH 2002/95/EC OT-363 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI1489EDH

    Abstract: si1489
    Contextual Info: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5


    Original     		Si1489EDH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1489 PDF

    SMD resistors 1806

    Abstract: SMD zener diode 202 1N4148WS
    Contextual Info: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5


    Original     		HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS PDF

    SI1489EDH

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SiB914

    Abstract: SiA427DJ si2329ds si8802
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS


    Original     		SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802 PDF