SI8821EDB Search Results
SI8821EDB Price and Stock
Vishay Siliconix SI8821EDB-T2-E1MOSFET P-CH 30V 4MICROFOOT |
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SI8821EDB-T2-E1 | Digi-Reel | 2,615 | 1 |
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Vishay Intertechnologies SI8821EDB-T2-E1- Tape and Reel (Alt: SI8821EDB-T2-E1) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8821EDB-T2-E1 | Reel | 3,000 | 20 Weeks | 3,000 |
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SI8821EDB-T2-E1 | 3,000 |
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SI8821EDB-T2-E1 | Reel | 3,000 |
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SI8821EDB-T2-E1 | Reel | 3,000 | 3,000 |
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SI8821EDB-T2-E1 | 21 Weeks | 3,000 |
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SI8821EDB-T2-E1 | 5,004 |
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SI8821EDB Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI8821EDB-T2-E1 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V MICRO FOOT | Original |
SI8821EDB Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.135 at VGS = -4.5 V -2.3 0.150 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC |
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Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC |
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Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si8821EDB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.128 at VGS = - 4.5 V - 2.3 0.143 at VGS = - 3.7 V - 2.1 0.215 at VGS = - 2.5 V - 1.8 VDS (V) - 30 Qg (Typ.) 5.2 nC |
Original |
Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI8821EDBContextual Info: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC |
Original |
Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm |
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Si8489EDB Si8902AEDB VMN-PT0107-1402 |