SIS407ADN Search Results
SIS407ADN Price and Stock
Vishay Siliconix SIS407ADN-T1-GE3MOSFET P-CH 20V 18A PPAK1212-8 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIS407ADN-T1-GE3 | Cut Tape | 13,818 | 1 |
|
Buy Now | |||||
Vishay Intertechnologies SIS407ADN-T1-GE3Power MOSFET, P Channel, 20 V, 18 A, 9 mOhm, PowerPAK 1212, 8 Pins, Surface Mount - Tape and Reel (Alt: SIS407ADN-T1-GE3) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIS407ADN-T1-GE3 | Reel | 20 Weeks | 6,000 |
|
Buy Now | |||||
|
SIS407ADN-T1-GE3 | 8,097 |
|
Buy Now | |||||||
|
SIS407ADN-T1-GE3 | 15,000 | 3,000 |
|
Buy Now | ||||||
|
SIS407ADN-T1-GE3 | 15,000 | 20 Weeks | 3,000 |
|
Buy Now | |||||
|
SIS407ADN-T1-GE3 | Cut Tape | 50 | 1 |
|
Buy Now | |||||
|
SIS407ADN-T1-GE3 | Reel | 12,000 | 3,000 |
|
Buy Now | |||||
|
|
SIS407ADN-T1-GE3 | 6,000 | 24 Weeks | 6,000 |
|
Get Quote | |||||
|
SIS407ADN-T1-GE3 | 21,000 | 21 Weeks | 3,000 |
|
Buy Now | |||||
|
SIS407ADN-T1-GE3 | 18,000 | 1 |
|
Buy Now | ||||||
|
SIS407ADN-T1-GE3 | 9,848 |
|
Get Quote | |||||||
Vishay Dale SIS407ADN-T1-GE3SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 18A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIS407ADN-T1-GE3 | 1,988 |
|
Buy Now | |||||||
Vishay Huntington SIS407ADN-T1-GE3MOSFET P-CH 20V 18A 1212-8 PPAK / Trans MOSFET P-CH 20V 18A 8-Pin PowerPAK 1212 T/R |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIS407ADN-T1-GE3 | 13,355 |
|
Buy Now | |||||||
SIS407ADN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| SIS407ADN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 18A 1212-8 PPAK | Original |
SIS407ADN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.) |
Original |
SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
Contextual Info: SPICE Device Model SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
SiS407ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.) |
Original |
SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |