S0909 Search Results

1001-7R

Abstract: EP 950 4320-7R 2540-7R
Contextual Info: P Series 100.195 Watt DC-DC Converters Input voltage up to 150 V DC, surges up to 168 V 1 to 4 isolated outputs 3.3.96 V DC Class I equipment LGA • Extremely slim case 4 TE , fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range

IRFL014

Abstract: siliconix sot-223 marking SiHFL014 SiHFL014-E3
Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRLZ24

Abstract: SiHLZ24 SiHLZ24-E3
Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V

SiHFL214

Abstract: siliconix sot-223 marking IRFL214 SiHFL214-E3
Contextual Info: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRFU210

Abstract: IRFR210 SiHFR210 SiHFR210-E3 SiHFU210
Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8

IRFL210

Abstract: SiHFL210 SiHFL210-E3
Contextual Info: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 • Dynamic dV/dt Rating Qgs (nC) 1.8 • Repetitive Avalanche Rated 4.5 • Fast Switching Qgd (nC) Configuration

2101-7R

Abstract: 1001-7R Schroff 2660-7R 3020-7R
Contextual Info: P Series 120.195 Watt DC-DC Converters Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3.96 V DC 4242V DC I/O electric strength test voltage LGA • Extremely slim case 4 TE , fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range

IRFR110

Contextual Info: IRFR110, IRFU110, SiHFR110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated

Si4946BEY-T1-E3

Abstract: Si4946BEY SI4946BEY-T1-GE3
Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch

irfr9010

Contextual Info: IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9010, SiHFR9010)

IRLL110

Abstract: siliconix sot-223 marking SiHLL110T-E3a SIHLL110 SiHLL110Ta marking g10
Contextual Info: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel

Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch

Contextual Info: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

2101-7R

Abstract: 1001-7R S0909 46607
Contextual Info: P Series 120.195 Watt DC-DC Converters Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3.96 V DC Class I equipment LGA • Extremely slim case 4 TE , fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range

SQM110N04-03L-GE3

Abstract: DEVICE MARKING 03L
Contextual Info: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET

Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch

IRFL9014

Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014PBF
Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration

Contextual Info: New Product Si4154DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 36 0.0039 at VGS = 4.5 V 33 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4485DY

Abstract: si4485
Contextual Info: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch

Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch

Si5513CDC

Contextual Info: SPICE Device Model Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SI4485DY

Contextual Info: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested