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    SI5513CDC Price and Stock

    Vishay Siliconix SI5513CDC-T1-GE3

    MOSFET N/P-CH 20V 4A/3.7A 1206-8
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    DigiKey () SI5513CDC-T1-GE3 Cut Tape 8,065 1
    • 1 $0.88
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    SI5513CDC-T1-GE3 Digi-Reel 8,065 1
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    SI5513CDC-T1-GE3 Reel 6,000 3,000
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    Quest Components SI5513CDC-T1-GE3 72
    • 1 $0.525
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    Vishay Siliconix SI5513CDC-T1-E3

    MOSFET N/P-CH 20V 4A/3.7A 1206-8
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    DigiKey () SI5513CDC-T1-E3 Cut Tape 5,371 1
    • 1 $0.88
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    SI5513CDC-T1-E3 Digi-Reel 5,371 1
    • 1 $0.88
    • 10 $0.55
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    SI5513CDC-T1-E3 Reel 3,000 3,000
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    Vishay Intertechnologies SI5513CDC-T1-GE3

    Trans MOSFET N/P-CH 20V 4A/2.4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5513CDC-T1-GE3)
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    Avnet Americas SI5513CDC-T1-GE3 Reel 10 Weeks 3,000
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    Mouser Electronics SI5513CDC-T1-GE3 4,026
    • 1 $0.76
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    Newark () SI5513CDC-T1-GE3 Cut Tape 2,641 1
    • 1 $0.708
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    SI5513CDC-T1-GE3 Reel 3,000
    • 1 $0.238
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    TTI SI5513CDC-T1-GE3 Reel 9,000 3,000
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    Avnet Asia SI5513CDC-T1-GE3 12 Weeks 3,000
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    EBV Elektronik SI5513CDC-T1-GE3 9,000 21 Weeks 3,000
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    New Advantage Corporation SI5513CDC-T1-GE3 6,000 1
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    Vishay Intertechnologies SI5513CDC-T1-E3

    Trans MOSFET N/P-CH 20V 4A/2.4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5513CDC-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI5513CDC-T1-E3 Reel 10 Weeks 3,000
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    Mouser Electronics SI5513CDC-T1-E3 3,232
    • 1 $0.71
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    Newark SI5513CDC-T1-E3 Reel 3,000
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    TTI SI5513CDC-T1-E3 Reel 9,000 3,000
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    EBV Elektronik SI5513CDC-T1-E3 21 Weeks 3,000
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    Vyrian SI5513CDC-T1-E3 4,039
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    Vishay Huntington SI5513CDC

    N- and P-Channel 20-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI5513CDC 20,000
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    • 100 $6.595
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    Find more SI5513CDC price and stock on Findchips.com

    SI5513CDC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5513CDC-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8 Original PDF
    SI5513CDC-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8 Original PDF

    SI5513CDC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN609

    Abstract: Si5513CDC
    Contextual Info: Si5513CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si5513CDC AN609, 23-Jul-08 AN609 PDF

    Contextual Info: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		Si5513CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si5513CDC-T1-E3

    Abstract: Si5513CDC 82490
    Contextual Info: Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		Si5513CDC Si5513CDC-T1-E3 18-Jul-08 82490 PDF

    Contextual Info: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		Si5513CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		Si5513CDC 2002/95/EC Si5513CDC-T1-E3 Si5513CDC-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		Si5513CDC 2002/95/EC Si5513CDC-T1-E3 Si5513CDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si5513CDC

    Contextual Info: SPICE Device Model Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si5513CDC 18-Jul-08 PDF

    Contextual Info: SPICE Device Model Si5513CDC www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si5513CDC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5513CDC

    Abstract: Si5513CDC-T1-E3 S10-0547-Rev
    Contextual Info: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		Si5513CDC 2002/95/EC 18-Jul-08 Si5513CDC-T1-E3 S10-0547-Rev PDF

    Si5513CDC

    Abstract: transistor mosfet n-ch drain current Si5513CDC-T1-E3 Si5513DC Si5513DC-T1 Si5513DC-T1-E3
    Contextual Info: Specification Comparison Vishay Siliconix Si5513CDC vs. Si5513DC Description: Package: Pin Out: N- and P-Channel 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5513CDC-T1-E3 replaces Si5513DC-T1 Si5513CDC-T1-E3 replaces Si5513DC-T1-E3


    Original     		Si5513CDC Si5513DC Si5513CDC-T1-E3 Si5513DC-T1 Si5513DC-T1-E3 04-Aug-08 transistor mosfet n-ch drain current PDF

    Contextual Info: Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		Si5513CDC Si5513CDC-T1-E3 18-Jul-08 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF