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Vishay Siliconix SIHFL210TR-GE3 MOSFET N-CHANNEL 200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHFL210TR-GE3	Cut Tape	348		1	1 $0.93 10 $0.579 100 $0.93 1000 $0.93 10000 $0.93	Buy Now
	SIHFL210TR-GE3	Digi-Reel			1	1 $0.93 10 $0.579 100 $0.93 1000 $0.93 10000 $0.93	Buy Now
	SIHFL210TR-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.23092	Buy Now
Vishay Intertechnologies SIHFL210TR-GE3 MOSFET N-CHANNEL 200V - Tape and Reel (Alt: SIHFL210TR-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFL210TR-GE3	Reel		24 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.17945	Buy Now
Mouser Electronics	SIHFL210TR-GE3		4,725			1 $0.91 10 $0.571 100 $0.371 1000 $0.328 10000 $0.185	Buy Now
Newark	SIHFL210TR-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.199	Buy Now
TTI	SIHFL210TR-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.192	Buy Now
EBV Elektronik	SIHFL210TR-GE3			25 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHFL210 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHFL210TR-GE3		Vishay Siliconix	MOSFET N-CHANNEL 200V		Original	PDF

SIHFL210 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFL210 Abstract: SiHFL210 SiHFL210-E3 Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 • Dynamic dV/dt Rating Qgs (nC) 1.8 • Repetitive Avalanche Rated 4.5 • Fast Switching Qgd (nC) Configuration	Original	IRFL210, SiHFL210 2002/95/EC OT-223 OT-223lectual 18-Jul-08 IRFL210 SiHFL210-E3	PDF
IRFL210TRPBF Abstract: S8210 Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRFL210, SiHFL210 OT-223 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFL210TRPBF S8210	PDF
Untitled Abstract: No abstract text available Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRFL210, SiHFL210 OT-223 2002/95/EC OT-223 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRFL210, SiHFL210 OT-223 2002/95/EC OT-223 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: IRFL210, SiHFL210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 G D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	IRFL210, SiHFL210 OT-223 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: IRFL210_RC, SiHFL210_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRFL210 SiHFL210 AN609, CONFIGURAay-10 31-May-10	PDF
IRFL210 Abstract: SiHFL210 SiHFL210-E3 Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 • Dynamic dV/dt Rating Qgs (nC) 1.8 • Repetitive Avalanche Rated 4.5 • Fast Switching Qgd (nC) Configuration	Original	IRFL210, SiHFL210 OT-223 OT-223 18-Jul-08 IRFL210 SiHFL210-E3	PDF
Untitled Abstract: No abstract text available Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRFL210, SiHFL210 OT-223 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRFL210, SiHFL210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface mount Available in tape and reel	Original	IRFL210, SiHFL210 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 • Dynamic dV/dt Rating Qgs (nC) 1.8 • Repetitive Avalanche Rated 4.5 • Fast Switching Qgd (nC) Configuration	Original	IRFL210, SiHFL210 OT-223 OT-223 12-Mar-07	PDF
91196 Abstract: No abstract text available Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFL9110, SiHFL9110 OT-223 12-Mar-07 91196	PDF
IRFL9110 Abstract: SiHFL9110 SiHFL9110-E3 irfl9110pbf Text: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFL9110, SiHFL9110 OT-223 OT-223 18-Jul-08 IRFL9110 SiHFL9110-E3 irfl9110pbf	PDF