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Essentra Components SRS8-2-10-01 BRD SPT SNAP LOCK SCREW MNT 5/8"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SRS8-2-10-01	Bulk	4,850		1	1 $0.2 10 $0.15 100 $0.1175 1000 $0.09567 10000 $0.09567	Buy Now
Mouser Electronics	SRS8-2-10-01					1 $0.18 10 $0.172 100 $0.172 1000 $0.167 10000 $0.167	Get Quote
RS	SRS8-2-10-01	Bulk		19 Weeks	1,000	1 - 10 - 100 - 1000 $0.246 10000 $0.226	Get Quote
DB Roberts	SRS8-2-10-01					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bel Fuse SS-82100-005 MOD JACK KEYSTONE CAT5E SHLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SS-82100-005	Box	390		1	1 $5.38 10 $4.569 100 $3.8835 1000 $3.35369 10000 $3.07027	Buy Now
Avnet Americas ()	SS-82100-005	Bulk		8 Weeks, 6 Days	1	1 $5.98 10 $5.72 100 $4.76 1000 $4.76 10000 $4.76	Buy Now
	SS-82100-005	Tray		8 Weeks	400	1 - 10 - 100 - 1000 $2.95121 10000 $2.95121	Buy Now
Avnet Abacus	SS-82100-005			20 Weeks	400	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Electro Switch Corporation PS82-100G SWITCH PUSHBUTTON SPDT 5A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PS82-100G	Bulk			1	1 $15.13 10 $15.13 100 $15.13 1000 $15.13 10000 $15.13	Buy Now
onsemi SURS8210T3G DIODE STANDARD 100V 2A SMB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SURS8210T3G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	SURS8210T3G			143 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SURS8210T3G			143 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Stewart Connector SS-82100-001 CONN MOD JACK 8P8C SHIELDED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SS-82100-001	Bag				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	SS-82100-001	Bulk			92	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Interstate Connecting Components	SS-82100-001		253			1 $7.056 10 $7.056 100 $5.6903 1000 $5.5125 10000 $5.5125	Buy Now
Master Electronics	SS-82100-001					1 - 10 $7.37 100 $6.82 1000 $6.18 10000 $4.79	Buy Now

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S8210 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRLL110PBF Abstract: IRLL110TRPBF Contextual Info: IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel	Original	IRLL110, SiHLL110 OT-223 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRLL110PBF IRLL110TRPBF	PDF
IRFL110TR Abstract: IRFL110, Siliconix Contextual Info: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21 Definition	Original	IRFL110, SiHFL110 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFL110TR IRFL110, Siliconix	PDF
s8210 Abstract: A/s8210 Contextual Info: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 9.2 S (typ.)	Original	TPCS8210 s8210 A/s8210	PDF
s8210 Contextual Info: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 9.2 S (typ.)	Original	TPCS8210 s8210	PDF
Contextual Info: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21 Definition	Original	IRFL110, SiHFL110 OT-223 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
S8210 Abstract: TPCS8210 Contextual Info: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 9.2 S (typ.)	Original	TPCS8210 S8210 TPCS8210	PDF
handbook of shipboard electromagnetic shielding practices Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915 Contextual Info: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command	Original	S9407-AB-HBK-010 S9407-AB-HBK-010, S9407-AB-HBK-010 03Z44, 05H31, 08K/CHABAY) PMS303A41, handbook of shipboard electromagnetic shielding practices ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915	PDF
IRFL210TRPBF Abstract: S8210 Contextual Info: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRFL210, SiHFL210 OT-223 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFL210TRPBF S8210	PDF
Contextual Info: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D	Original	IRFL9014, SiHFL9014 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFL014, SiHFL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the	Original	IRFL014, SiHFL014 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.20 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single Surface mount Available in tape and reel	Original	IRLL014, SiHLL014 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFL110, SiHFL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the	Original	IRFL110, SiHFL110 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRLL014, SiHLL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRLL014, SiHLL014 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRFL110 Abstract: IRFL110, Siliconix Contextual Info: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21 Definition	Original	IRFL110, SiHFL110 2002/95/EC OT-223 11-Mar-11 IRFL110 IRFL110, Siliconix	PDF

Contextual Info: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRFL210, SiHFL210 OT-223 2002/95/EC OT-223 11-Mar-11	PDF
irll110 Abstract: IRLL110TRPBF Contextual Info: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21	Original	IRLL110, SiHLL110 2002/95/EC OT-223 OT-223 11-Mar-11 irll110 IRLL110TRPBF	PDF
Contextual Info: IRFL210, SiHFL210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 G D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	IRFL210, SiHFL210 OT-223 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRLL110, SiHLL110 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: IRFL214, SiHFL214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D Third generation power MOSFETs from Vishay provide the	Original	IRFL214, SiHFL214 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRFL9110 Contextual Info: IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -100 RDS(on) () VGS = -10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION Third generation power MOSFETs from Vishay provide the	Original	IRFL9110, SiHFL9110 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRFL9110	PDF
s8210 Abstract: TPCS8210 TPCS8210 application A1930 "S8210" Contextual Info: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 9.2 S (typ.)	Original	TPCS8210 s8210 TPCS8210 TPCS8210 application A1930 "S8210"	PDF
IRLL110TRPBF Abstract: s8210 SiHLL110 Contextual Info: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21	Original	IRLL110, SiHLL110 2002/95/EC OT-223 OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRLL110TRPBF s8210	PDF
s8210 Abstract: TPCS8210 S-8210 TPCS8210 application Contextual Info: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 9.2 S (typ.)	Original	TPCS8210 s8210 TPCS8210 S-8210 TPCS8210 application	PDF
Contextual Info: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRFL214, SiHFL214 2002/95/EC OT-223 OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

S8210 Search Results

S8210 Price and Stock

Essentra Components SRS8-2-10-01

Bel Fuse SS-82100-005

Electro Switch Corporation PS82-100G

onsemi SURS8210T3G

Stewart Connector SS-82100-001

S8210 Datasheets Context Search

IRLL110PBF

IRFL110TR

s8210

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S8210

handbook of shipboard electromagnetic shielding practices

IRFL210TRPBF

IRFL110

irll110

IRFL9110

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IRLL110TRPBF

s8210