SI7190DP Search Results
SI7190DP Price and Stock
Vishay Siliconix SI7190DP-T1-GE3MOSFET N-CH 250V 18.4A PPAK SO-8 |
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SI7190DP-T1-GE3 | Reel | 3,000 |
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Vishay Intertechnologies SI7190DP-T1-GE3Trans MOSFET N-CH 250V 4.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7190DP-T1-GE3) |
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SI7190DP-T1-GE3 | Reel | 111 Weeks | 3,000 |
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SI7190DP-T1-GE3 | Reel | 3,000 |
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SI7190DP-T1-GE3 | 143 Weeks | 3,000 |
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SI7190DP-T1-GE3 | 5,120 |
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Vishay Intertechnologies SI7190DPT1GE3N-CHANNEL 250-V (D-S) MOSFET Power Field-Effect Transistor, 4.4A I(D), 250V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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SI7190DPT1GE3 | 3,970 |
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Vishay Huntington SI7190DP-T1-GE3Trans MOSFET N-CH 250V 18.4A 8-Pin PowerPAK SO T/R / MOSFET N-CH 250V 18.4A PPAK SO-8 |
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SI7190DP-T1-GE3 | 20,757 |
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SI7190DP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI7190DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 18.4A 8-SOIC | Original |
SI7190DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch |
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Si7190DP 2002/95/EC Si7190DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch |
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Si7190DP 2002/95/EC Si7190DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI7190DPContextual Info: SPICE Device Model Si7190DP www.vishay.com Vishay Siliconix N-Channel 250 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si7190DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
M 721
Abstract: AN609
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Si7190DP AN609, 21-Oct-08 M 721 AN609 | |
Si7190DPContextual Info: SPICE Device Model Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7190DP 18-Jul-08 | |
Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch |
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Si7190DP 2002/95/EC Si7190DP-T1-GE3 18-Jul-08 | |
Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch |
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Si7190DP 2002/95/EC Si7190DP-T1-GE3 11-Mar-11 | |
si7190Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET |
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Si7190DP Si7190DP-T1-GE3 18-Jul-08 si7190 | |
Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch |
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Si7190DP 2002/95/EC Si7190DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch |
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Si7190DP 2002/95/EC Si7190DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |