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    RJH30 Price and Stock

    Rochester Electronics LLC RJH30H1DPP-M1-T2

    IGBT
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    DigiKey RJH30H1DPP-M1-T2 Bulk 10,841 163
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    Rochester Electronics LLC RJH30E3DPK-M0-T2

    IGBT
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    DigiKey RJH30E3DPK-M0-T2 Bulk 6,462 75
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    Rochester Electronics LLC RJH3047DPK-80-T2

    IGBT
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    DigiKey RJH3047DPK-80-T2 Bulk 4,981 61
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    Rochester Electronics LLC RJH30E2DPP-Z0-T2

    IGBT
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    DigiKey RJH30E2DPP-Z0-T2 Bulk 4,819 142
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    Rochester Electronics LLC RJH30E2DPP-00-T2

    IGBT
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    DigiKey RJH30E2DPP-00-T2 Bulk 2,395 142
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    Find more RJH30 price and stock on Findchips.com

    RJH30 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH3047DPK-80#T2 Renesas Electronics America IGBT Original PDF

    RJH30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJH30H1

    Abstract: RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching
    Text: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		RJH30H1DPP-M0 O-220FL R07DS0463EJ0200 PRSS0003AF-A O-220FL) RJH30H1 RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching PDF

    RJH30

    Abstract: RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A
    Text: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A PDF

    RJH30

    Abstract: RJH30H2
    Text: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2 PDF

    RJH30H1

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		RJH30H1DPP-M0 R07DS0463EJ0200 O-220FL PRSS0003AF-A O-220FL) RJH30H1 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF