RJH30H Search Results

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Renesas Electronics Corporation RJH30H1DPP-M1#T2 RJH30H1DPP-M1#T2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJH30H1DPP-M1#T2		10,841		179	1 - 10 - 100 - 1000 $2.1 10000 $2.1	Buy Now
Rochester Electronics	RJH30H1DPP-M1#T2		10,841		1	1 - 10 - 100 $1.6 1000 $1.43 10000 $1.34	Buy Now
Renesas Electronics Corporation RJH30H2DPK-M2#T2 RJH30H2DPK-M2#T2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJH30H2DPK-M2#T2		1,140		91	1 - 10 - 100 $4.15 1000 $4.15 10000 $4.15	Buy Now
Rochester Electronics	RJH30H2DPK-M2#T2		1,140		1	1 - 10 - 100 $3.15 1000 $2.82 10000 $2.66	Buy Now
Renesas Electronics Corporation RJH30H1DPP-M0#T2 Insulated Gate Bipolar Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJH30H1DPP-M0#T2		131		1	1 - 10 - 100 $1.6 1000 $1.43 10000 $1.34	Buy Now

RJH30H Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RJH30H1 Abstract: RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching Contextual Info: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.	Original	RJH30H1DPP-M0 O-220FL R07DS0463EJ0200 PRSS0003AF-A O-220FL) RJH30H1 RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching	PDF
RJH30 Abstract: RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A Contextual Info: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ	Original	RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A	PDF
RJH30 Abstract: RJH30H2 Contextual Info: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ	Original	RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2	PDF
RJH30H1 Contextual Info: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.	Original	RJH30H1DPP-M0 R07DS0463EJ0200 O-220FL PRSS0003AF-A O-220FL) RJH30H1	PDF