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    RJH30H2DPK Search Results

    RJH30H2DPK Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJH30H2DPK-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    SF Impression Pixel

    RJH30H2DPK Price and Stock

    Rochester Electronics LLC RJH30H2DPK-M2-T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH30H2DPK-M2-T2 Bulk 1,140 82
    • 1 -
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    • 100 $3.66
    • 1000 $3.66
    • 10000 $3.66
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    Renesas Electronics Corporation RJH30H2DPK-M2#T2

    RJH30H2DPK-M2#T2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH30H2DPK-M2#T2 1,140 91
    • 1 -
    • 10 -
    • 100 $4.15
    • 1000 $4.15
    • 10000 $4.15
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    Rochester Electronics RJH30H2DPK-M2#T2 1,140 1
    • 1 -
    • 10 -
    • 100 $3.15
    • 1000 $2.82
    • 10000 $2.66
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    RJH30H2DPK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJH30

    Abstract: RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A
    Text: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A PDF

    RJH30

    Abstract: RJH30H2
    Text: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2 PDF