RQJ0301 Search Results

RQJ0301 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RQJ0301HGDQS#H3		Renesas Electronics Corporation	Pch Single Power Mosfet -30V -5.2A 48Mohm Upak/Sc-62

RQJ0301 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RQJ0301HGDQS		Renesas Technology	Silicon P Channel MOS FET Power Switching		Original	PDF
RQJ0301HGDQS		Renesas Technology	Silicon P Channel MOS FET Power Switching		Original	PDF
RQJ0301HGDQSTL-E		Renesas Technology	Transistor Mosfet P-CH 30V 5.2A 3UPAK T/R		Original	PDF

RQJ0301 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RQJ0301HGDQS Abstract: RQJ0301HGDQSTL-E Text: RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0300 Rev.3.00 Jun 05, 2006 Features • Low on-resistance RDS on = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A	Original	PDF	RQJ0301HGDQS REJ03G1265-0300 PLZZ0004CA-A RQJ0301HGDQS RQJ0301HGDQSTL-E
Untitled Abstract: No abstract text available Text: RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0200 Rev.2.00 Nov 25, 2005 Features • Low on-resistance RDS on = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A	Original	PDF	RQJ0301HGDQS REJ03G1265-0200 PLZZ0004CA-A
RQJ0301HGDQSTL-E Abstract: RQJ0301HGDQS Text: RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0100 Preliminary Rev.1.00 Oct 04, 2005 Features • Low on-resistance RDS on = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive	Original	PDF	RQJ0301HGDQS REJ03G1265-0100 PLZZ0004CA-A RQJ0301HGDQSTL-E RQJ0301HGDQS
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
RQJ0301HGDQS Abstract: RQJ0301HGDQSTL-E rqj0301 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Hdd spindle motor Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA Text: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts	Original	PDF	O-220CFM H5N5004PL H5N5005PL RJL5012DPP O-220FN RJL5013DPP RJL5014DPP RJL5014DPK Hdd spindle motor HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA