RF POWER FET Search Results

RF POWER FET Result Highlights (5)

Part	Manufacturer	Description
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HDIP30
TPD4163F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=5 A / SSOP30

RF POWER FET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VK200 19 4B INDUCTOR Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor	PDF
CLASS AB MOSFET RF amplifier Abstract: mosfet amplifier class ab rf an3175 mosfet high power rf ldmos rf mosfet power amplifier mosfet class ab rf rf amplifier class a fet mosfet MOSFET amplifier RF CLASS AB DS1847 LDMOS Text: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: DS1847, DS1848, base-station, rf power-amplifier Apr 06, 2004 APPLICATION NOTE 3175 Base-Station RF Power-Amplifier Biasing Power amplifiers used in base stations require biasing for proper RF performance. This article explains the two	Original	DS1847, DS1848, DS1847 com/an3175 DS1847: DS1848: AN3175, APP3175, Appnote3175, CLASS AB MOSFET RF amplifier mosfet amplifier class ab rf an3175 mosfet high power rf ldmos rf mosfet power amplifier mosfet class ab rf rf amplifier class a fet mosfet MOSFET amplifier RF CLASS AB LDMOS	PDF
RF Based Wireless Electronic Notice Board using 8051 Abstract: 433MHZ RF Transmitter INTERFACING 8051 io-homecontrol sample program for CC2431 pir sensor c171 interfacing 8051 with wi-fi modem PIR sensor 8051 projects 433MHZ RF RECEIVER INTERFACING 8051 Interfacing msp430 to cc1111 example TX-433 RF Text: Low-Power RF Guide www.ti.com/lprfÊ 2QÊ 2009 2 Low-Power RF Selection Guide ➔ Table of contents RF made easy Texas Instruments TI offers a wide selection of cost-effective, low-power RF solutions for proprietary and standard-based wireless applications	Original	D093008 SLAB052B RF Based Wireless Electronic Notice Board using 8051 433MHZ RF Transmitter INTERFACING 8051 io-homecontrol sample program for CC2431 pir sensor c171 interfacing 8051 with wi-fi modem PIR sensor 8051 projects 433MHZ RF RECEIVER INTERFACING 8051 Interfacing msp430 to cc1111 example TX-433 RF	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.	Original	RD10MMS2 870MHz RD10MMS2 12Wtyp, 870MHz 800MHz-band	PDF
GRM39 Abstract: GRM708 RD05MMP1 diode GP 829 6030D Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GRM39 GRM708 diode GP 829 6030D	PDF
GP 819 Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GP 819	PDF
UNELCO Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor	PDF
DL110 Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179 Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	MRF275L/D MRF275L DL110 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179	PDF
MRF255 equivalent Abstract: mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B Text: MOTOROLA Order this document by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Effect Transistor N–Channel Enhancement–Mode 55 W, 12.5 Vdc, 54 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies	Original	MRF255/D MRF255 MRF255/D* DEVICEMRF255/D MRF255 equivalent mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B	PDF
RD02MUS1 Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17	PDF
RD30HVF1 Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 RD30HVF1-101 rf power transistor rd30hvf1 100OHM	PDF
RD07MUS2B Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773	PDF
RD16HHF1 equivalent Abstract: RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet RD16HHF1 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1 equivalent RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING	PDF
mitsubishi top marking Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) mitsubishi top marking	PDF

RD09MUP2 Abstract: TRANSISTOR D 1765 720 L 0619 1788 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 720 L 0619 1788	PDF
RD20HMF1 Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers	Original	RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz	PDF
RD16HHF1 Abstract: RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet	PDF
A 1469 mosfet Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM mosfet 800 v MITSUBISHI RF POWER MOS FET	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.	Original	RD07MVS1B 175MHz 520MHz RD07MVS1 RD07MVS1B 520MHz	PDF
16HHF1 Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF	PDF
MRF255 equivalent Abstract: electrolytic capacitor 470 mrf255 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies	OCR Scan	MRF255 MRF255 equivalent electrolytic capacitor 470	PDF
M68732SHA Abstract: No abstract text available Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732SHA Silicon MOS FET Power Amplifier, 470-520MHz 6.7W FM PORTABLE PIN: l.Pin :RF INPUT :GATE BIAS SUPPLY 3 .V D D :DRAIN BIAS SUPPLY 4 .P0 :RF OUTPUT	OCR Scan	M68732SHA 470-520MHz 25deg 50ohms 50ohms M68732SHA	PDF
uhf tv power transistor 250w Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF176GV MRF176GU The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push	OCR Scan	MRF176GV MRF176GU MRF176GV MRF176G MRF176 MRF176GU uhf tv power transistor 250w	PDF
SS440 Abstract: M68732HA 490MH Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732HA Silicon MOS FET Power Amplifier, 440-490MHz 7W FM PORTABLE PIN: lJPin :RF INPUT :GATE BIAS SUPPLY 3 .V d d :DRAIN BIAS SUPPLY 4.Po :RF OUTPUT 5.GND :FIN	OCR Scan	M68732HA 440-490MHz 25deg 50ohms SS440 M68732HA 490MH	PDF

RF POWER FET Search Results

RF POWER FET Result Highlights (5)

RF POWER FET Datasheets Context Search

VK200 19 4B INDUCTOR

CLASS AB MOSFET RF amplifier

RF Based Wireless Electronic Notice Board using 8051

Untitled

GRM39

GP 819

UNELCO

DL110

MRF255 equivalent

RD02MUS1

RD30HVF1

RD07MUS2B

RD16HHF1 equivalent

mitsubishi top marking

RD09MUP2

RD20HMF1

RD16HHF1

A 1469 mosfet

Untitled

16HHF1

MRF255 equivalent

M68732SHA

uhf tv power transistor 250w

SS440