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    2204B Price and Stock

    Wima FKP1R012204B00MSSD

    CAP FILM 2200PF 20% 1.25KVDC RAD
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    DigiKey FKP1R012204B00MSSD Bulk 16,353 1
    • 1 $0.59
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    • 100 $0.2865
    • 1000 $0.2358
    • 10000 $0.18128
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    Susumu Co Ltd RG3216P-2204-B-T1

    RES 2.2M OHM 0.1% 1/4W 1206
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    DigiKey RG3216P-2204-B-T1 Cut Tape 15,359 1
    • 1 $0.26
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    RG3216P-2204-B-T1 Digi-Reel 15,359 1
    • 1 $0.26
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    RG3216P-2204-B-T1 Reel 15,000 1,000
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    Newark RG3216P-2204-B-T1 Reel 1,000
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    Wima MKP1J022204B00JSSD

    MKP 10 0.022 F 630 VDC 5X11X18 P
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    DigiKey MKP1J022204B00JSSD Bulk 9,395 1
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    Avnet Abacus MKP1J022204B00JSSD 16 Weeks 4,800
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    Maritex MKP1J022204B00JSSD 1,156 1
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    Wima MKP4F032204B00JSSD

    MKP 4 0.22 F 250 VDC 5X11X18 PCM
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    DigiKey MKP4F032204B00JSSD Bulk 6,490 1
    • 1 $0.89
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    TTI MKP4F032204B00JSSD Bulk 2,400
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    Wima FKP1U002204B00MSSD

    CAP FILM 220PF 20% 2KVDC RAD
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    DigiKey FKP1U002204B00MSSD Bulk 4,057 1
    • 1 $0.65
    • 10 $0.415
    • 100 $0.2871
    • 1000 $0.23242
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    2204B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transformer 0-12v

    Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
    Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 transformer 0-12v J101 0-12V 2204B MRF151 Transistor C2 Unelco J101 PDF

    VRF141

    Abstract: 28v 30MHZ MRF141 2204B
    Text: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF141 175MHz VRF141 30MHz, 175MHz, MRF141 28v 30MHZ MRF141 2204B PDF

    MRF151G

    Abstract: VRF151G 2204B
    Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast


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    VRF151G 175MHz VRF151G 175MHz. 175MHz, MRF151G MRF151G 2204B PDF

    blf177

    Abstract: 2204B MRF151 VRF152
    Text: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF152 175MHz VRF152 30MHz, 175MHz, MRF151/ BLF177/ SD2941 blf177 2204B MRF151 PDF

    balun 50 ohm

    Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
    Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


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    VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 balun 50 ohm 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 trifilar PDF

    MOTOROLA circuit for mrf150

    Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
    Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics


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    MRF150/D MRF150 MOTOROLA circuit for mrf150 motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B PDF

    MRF141

    Abstract: G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    MRF141/D MRF141 MRF141 G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics


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    MRF140/D MRF140 MRF140/D* PDF

    RF800

    Abstract: MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A
    Text: ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS


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    P-244 RF800 MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics


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    RF140/D MRF140 Nippon capacitors PDF

    transformer 0-12v

    Abstract: ATC 4400
    Text: VRF190E G VRF190EMP(G) 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


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    VRF190E VRF190EMP 150MHz VRF190. M174A 30MHz, 150MHz, SD3931-10 Complian800 transformer 0-12v ATC 4400 PDF

    MRF148A

    Abstract: No abstract text available
    Text: ^Etni-Conduatoi ZPioaucti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF148A Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz.


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    MRF148A 175MHz. 30MHz MIL-STD-1311 2204B, MRF148A PDF

    Transistor J550

    Abstract: VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550
    Text: Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —


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    MRF426/D MRF426 Transistor J550 VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


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    VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154 PDF

    VK200-4B

    Abstract: diode 4937 J101 VRF151 0-12V 2204B MRF151
    Text: VRF151 PRELIMINARY 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 VK200-4B diode 4937 J101 0-12V 2204B MRF151 PDF

    VRF2933

    Abstract: 300WPEP 2204b ATC100B LM3905 SD2933 M177
    Text: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF2933 150MHz VRF2933 30MHz, SD2933 300WPEP 2204b ATC100B LM3905 SD2933 M177 PDF

    723 voltage regulator

    Abstract: RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH
    Text: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


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    VRF157FL 80MHz VRF157FL 30MHz, MRF157 723 voltage regulator RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH PDF

    723 voltage regulator

    Abstract: IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 VRF157FL RL1009-5820-97-D1
    Text: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


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    VRF157FL 80MHz VRF157FL 30MHz, MRF157 723 voltage regulator IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 RL1009-5820-97-D1 PDF

    RF MOSFET CLASS AB

    Abstract: AN211-A motorola bipolar transistor data manual
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    PDF

    MRF406

    Abstract: MRF406 MOTOROLA 20WPEP
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 20 W PEP - 3 0 M H z RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . . designed p r im a r ily fo r a p p lic a tio n as a pow er lin e a r a m p lifie r fro m 2 .0 to 30 M Hz. • S p e cifie d 12.5 V o lt, 3 0 M H z C h ara cteristics O u tp u t Power = 20 W ÌPEP)


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    MRF406 MRF406 MRF406 MOTOROLA 20WPEP PDF

    TIC 136 Transistor

    Abstract: mrf412
    Text: MOTOROLA SC ÎXSTRS/R "flT ]>F|k3l.72Si| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier


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    007flT71 MRF412 TIC 136 Transistor mrf412 PDF

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts


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    PDF

    MRF429MP

    Abstract: MRF429-MP MRF429 MRF-429
    Text: MOTOROLA SEM IC O N D U C T O R MRF429 MRF429MP TECHNICAL DATA The RF Line 150 W LINEAR 30 MHz RF POWER TRANSISTORS N P N SILIC O N NPN SILICON RF POWER TRANSISTORS . . d e s ig n e d p r im a rily fo r h ig h -v o lt a g e a p p lic a t io n s a s a h ig h p o w e r lin e a r a m p lifie r fro m 2.0 to 3 0 M H z . Id e a l fo r m a r in e a n d


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    MRF429 MRF429MP MRF429, MRF429MP MRF429-MP MRF-429 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode D e s ig n e d fo r p o w e r a m p lifie r a p p lic a tio n s in in d u s tria l, c o m m e rc ia l a n d a m a te u r ra dio e q u ip m e n t to 175 M H z.


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    MRF148 PDF