RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
transistor jc 817
gp 520 diode
gp 817
RF POWER TRANSISTOR
f763
transistor I 17-13 0773
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RD07MUS2B
Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
RD07MUS
RD07MUS2
f763
gp 817
329J
RD07M
mitsubishi MOSFET
jc 817
j-120
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GP 809 DIODE
Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
Nov2011
GP 809 DIODE
GP 839 DIODE
4406 mosfet
diode zener 7.2v
RD01MUS2B-101
gp 520 diode
diode gp 805
mosfet vhf power amplifier
GP 007 DIODE
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
Oct2011
marking 7W 66
AN-UHF-105
transistor jc 817
AN-UHF-116
AN-UHF116
GP 830 diode
diode gp 424
AN-900-041
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
RD07MUS2
RD07MUS
diode gp 424
RD07M
AN-VHF-046
AN-UHF-116
f763
AN-UHF-106
AN-VHF-053
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AN-UHF-098
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
AN-UHF-098
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GRM1882C1H
Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz
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AN-UHF-087-A
RD01MUS2
450-527MHz
RD01MUS2:
RD01MUS2
GRM1882C1H
GRM1882C1H150JA01
Single-Stage amplifier
GRM1882C1H102JA01
4005A
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RD07MUS2B
Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
f763
MITSUBISHI RF POWER MOS FET
S 170 MOSFET TRANSISTOR
329J
MOS 6509
mitsubishi MOSFET
RD07MUS2
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GP 809 DIODE
Abstract: GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
GP 809 DIODE
GP 007 DIODE
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RD07MUS2B
Abstract: RD07MUS2
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
RD07MUS2
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.
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RD10MMS2
870MHz
RD10MMS2
12Wtyp,
870MHz
800MHz-band
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RD01MUS1
Abstract: adj 2576
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V
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AN-UHF-060-A
RD01MUS1
RD01MUS1:
135MHz
100mA
527MHz
0mm/50
AN-UHF-060
adj 2576
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ic 1619 fm circuit layout
Abstract: No abstract text available
Text: MK1716-01 SERIAL PROGRAMMABLE CLOCK WITH SPREAD SPECTRUM Description Features The MK1716-01 is a versatile serial programmable clock source which takes up very little board space. • Packaged in 28 pin SSOP • Operating voltage 3.3V • Serially programmable: user determines the output
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MK1716-01
MK1716-01
ic 1619 fm circuit layout
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LTC5569
Abstract: LTC5541 LT5554 LTC5551 LTC5510 LTC5583 LTC5577
Text: LTC5577 300MHz to 6GHz High Signal Level Active Downconverting Mixer Features Description +30dBm IIP3 +15dBm Input P1dB n 0dB Conversion Gain n Wideband Differential IF Output n Very Low 2 x 2 and 3 × 3 Spurs n IF Frequency Range Up to 1.5GHz n Low LO-RF Leakage
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LTC5577
300MHz
30dBm
15dBm
16-Lead
LTC2208
LTC2153-14
V/380mA
V/180mA
16-Bit,
LTC5569
LTC5541
LT5554
LTC5551
LTC5510
LTC5583
LTC5577
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LTC5569
Abstract: LT5557 LT5554 LTC5585 LTC5567 LT5578 LTC5583
Text: LTC5567 300MHz to 4GHz Active Downconverting Mixer with Wideband IF FEATURES n n n n n n n n n n n DESCRIPTION The LTC 5567 is optimized for RF downconverting mixer applications that require wide IF bandwidth. The part is also a pin-compatible upgrade to the LT5557 active mixer,
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LTC5567
300MHz
LT5557
1950MHz
294mW
14GHz,
530MHz
80dBm,
72dBm
LTC5569
LT5554
LTC5585
LTC5567
LT5578
LTC5583
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KD-VB0F48
Abstract: IT2105FE-33.600MHz 514MH
Text: PL560-08 Tuning Assistant for 250~600MHz Doc ID: PAN1201051 By: Eddy van Keulen Date: 5-Jan-12 The PL560-08 AFM VCXO can be assembled in the KD-VB0F48 ceramic substrate. For optimum performance, the substrate needs to be assembled with certain values inductors depending upon the
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PL560-08
600MHz
PAN1201051
5-Jan-12
KD-VB0F48
PL560-08DC
600MHz.
272MHz
IT2105FE-33.600MHz
514MH
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Untitled
Abstract: No abstract text available
Text: MK1716-01 Preliminary Information SERIAL PROGRAMMABLE CLOCK WITH SPREAD SPECTRUM Description Features The MK1716-01 is a versatile serial programmable clock source which takes up very little board space. • Packaged in 28 pin SSOP • Operating voltage 3.3V
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MK1716-01
MK1716-01
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LTC5569
Abstract: LTC5541 LT5554 LTC5551 LTC5510 LTC5583
Text: LTC5577 300MHz to 6GHz High Signal Level Active Downconverting Mixer Features Description +30dBm IIP3 +15dBm Input P1dB n 0dB Conversion Gain n Wideband Differential IF Output n Very Low 2 x 2 and 3 × 3 Spurs n IF Frequency Range Up to 1.5GHz n Low LO-RF Leakage
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LTC5577
300MHz
30dBm
15dBm
16-Lead
LTC2208
LTC2153-14
V/380mA
V/180mA
16-Bit,
LTC5569
LTC5541
LT5554
LTC5551
LTC5510
LTC5583
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LTC5582
Abstract: G37 IC DB 16-16 LTC5567 LTC5567IUF#PBF LTC5583 LT5557 LTC5569 LTC5567IUF 112pF ic
Text: LTC5567 300MHz to 4GHz Active Downconverting Mixer with Wideband IF Features Description n n n n n n n n n The LTC 5567 is optimized for RF downconverting mixer applications that require wide IF bandwidth. The part is also a pin-compatible upgrade to the LT5557 active mixer,
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LTC5567
300MHz
LT5557
LTC6416
16-Bit
LTC6412
LT5554
LT5578
400MHz
LT5579
LTC5582
G37 IC
DB 16-16
LTC5567IUF#PBF
LTC5583
LTC5569
LTC5567IUF
112pF ic
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7107 GP
Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier
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AN-UHF-096-A
RD07MUS2B
450-527MHz
RD07MUS2B:
083YH-G"
RD07MUS2B
527MHz
250mA
527MHz)
10ohm
7107 GP
Single-Stage amplifier
GRM2162C1H101GD01E
GRM2162C1H120GD01E
GRM2162C1H240GD01E
GRM2162C1H540GD01E
GRM2162C1H8R0DD01E
GRM2162C1H9R0DD01E
micro strip line
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