527MHZ Search Results

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

GP 809 DIODE

Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

marking 7W 66

Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15

RD07MUS2B

Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

AN-UHF-098

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15

GRM1882C1H

Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz

RD07MUS2B

Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

GP 809 DIODE

Abstract: GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

RD07MUS2B

Abstract: RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

RD01MUS1

Abstract: adj 2576
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V

ic 1619 fm circuit layout

Contextual Info: MK1716-01 SERIAL PROGRAMMABLE CLOCK WITH SPREAD SPECTRUM Description Features The MK1716-01 is a versatile serial programmable clock source which takes up very little board space. • Packaged in 28 pin SSOP • Operating voltage 3.3V • Serially programmable: user determines the output

LTC5569

Abstract: LTC5541 LT5554 LTC5551 LTC5510 LTC5583 LTC5577
Contextual Info: LTC5577 300MHz to 6GHz High Signal Level Active Downconverting Mixer Features Description +30dBm IIP3 +15dBm Input P1dB n 0dB Conversion Gain n Wideband Differential IF Output n Very Low 2 x 2 and 3 × 3 Spurs n IF Frequency Range Up to 1.5GHz n Low LO-RF Leakage

LTC5569

Abstract: LT5557 LT5554 LTC5585 LTC5567 LT5578 LTC5583
Contextual Info: LTC5567 300MHz to 4GHz Active Downconverting Mixer with Wideband IF FEATURES n n n n n n n n n n n DESCRIPTION The LTC 5567 is optimized for RF downconverting mixer applications that require wide IF bandwidth. The part is also a pin-compatible upgrade to the LT5557 active mixer,

KD-VB0F48

Abstract: IT2105FE-33.600MHz 514MH
Contextual Info: PL560-08 Tuning Assistant for 250~600MHz Doc ID: PAN1201051 By: Eddy van Keulen Date: 5-Jan-12 The PL560-08 AFM VCXO can be assembled in the KD-VB0F48 ceramic substrate. For optimum performance, the substrate needs to be assembled with certain values inductors depending upon the

Contextual Info: MK1716-01 Preliminary Information SERIAL PROGRAMMABLE CLOCK WITH SPREAD SPECTRUM Description Features The MK1716-01 is a versatile serial programmable clock source which takes up very little board space. • Packaged in 28 pin SSOP • Operating voltage 3.3V

LTC5569

Abstract: LTC5541 LT5554 LTC5551 LTC5510 LTC5583
Contextual Info: LTC5577 300MHz to 6GHz High Signal Level Active Downconverting Mixer Features Description +30dBm IIP3 +15dBm Input P1dB n 0dB Conversion Gain n Wideband Differential IF Output n Very Low 2 x 2 and 3 × 3 Spurs n IF Frequency Range Up to 1.5GHz n Low LO-RF Leakage

LTC5582

Abstract: G37 IC DB 16-16 LTC5567 LTC5567IUF#PBF LTC5583 LT5557 LTC5569 LTC5567IUF 112pF ic
Contextual Info: LTC5567 300MHz to 4GHz Active Downconverting Mixer with Wideband IF Features Description n n n n n n n n n The LTC 5567 is optimized for RF downconverting mixer applications that require wide IF bandwidth. The part is also a pin-compatible upgrade to the LT5557 active mixer,

7107 GP

Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier