transformer 0-12v
Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
|
Original
|
VRF151
175MHz
VRF151
30MHz,
175MHz,
MRF151
transformer 0-12v
J101
0-12V
2204B
MRF151
Transistor C2
Unelco J101
|
PDF
|
arco 465
Abstract: arco 469 SD1487 100WPEP arco 463
Text: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon
|
Original
|
SD1487
SD1487
arco 465
arco 469
100WPEP
arco 463
|
PDF
|
capacitor 100uF 63V
Abstract: 100uf 63v electrolytic capacitor SD1457 Unelco
Text: SD1457 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 75 W MIN. WITH 10.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1457 BRANDING SD1457 PIN CONNECTION DESCRIPTION
|
Original
|
SD1457
SD1457
capacitor 100uF 63V
100uf 63v electrolytic capacitor
Unelco
|
PDF
|
arco 468
Abstract: sd1446 arco 467 micrometals T50-2 M113 arco 463
Text: SD1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION POUT = 70 W MIN. WITH 10 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1446 BRANDING SD1446 PIN CONNECTION DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon
|
Original
|
SD1446
SD1446
arco 468
arco 467
micrometals T50-2
M113
arco 463
|
PDF
|
SD1446
Abstract: M113 arco 468
Text: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz ■ Figure 1. Package 12.5 VOLTS s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l
|
Original
|
SD1446
SD1446
M113
arco 468
|
PDF
|
MOTOROLA circuit for mrf150
Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
|
Original
|
MRF150/D
MRF150
MOTOROLA circuit for mrf150
motorola MRF150
mrf150 equivalent
arco capacitors
choke vk200
vk200 choke
MRF150
"RF MOSFET"
VK200-4B
2204B
|
PDF
|
MRF653
Abstract: MRF653 circuit test
Text: MOTOROLA Order this document by MRF653/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics
|
Original
|
MRF653/D
MRF653
MRF653
MRF653 circuit test
|
PDF
|
MRF141
Abstract: G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors
Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
|
Original
|
MRF141/D
MRF141
MRF141
G10 zener diode
80 watt hf mosfet
class AB hf bipolar
2204B
AN211A
J101
VK200
Nippon capacitors
|
PDF
|
Johanson Piston Trimmer
Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Text: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc
|
Original
|
MRF327/D
MRF327
Johanson Piston Trimmer
J154
J329
J253
vk200
erie redcap capacitors
MRF327
NPN RF Amplifier
|
PDF
|
hf class AB power amplifier mosfet
Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
|
Original
|
MRF136/D
MRF136
hf class AB power amplifier mosfet
Triode 805
motorola diode 8296
1N5925A
AN211A
AN215A
AN721
MRF136
J973
|
PDF
|
J120 MOSFET
Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Text: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
|
Original
|
MRF175LU/D
MRF175LU
J120 MOSFET
J115 mosfet
AN211A
MRF175LU
VK200
MOSFET J140
|
PDF
|
transistor K30A
Abstract: K30A transistor D1143 UNELCO SD1143 M135 33ph Arco 423 K30A
Text: m 140 Commerce Drive ff M ontgom eryville, PA 18936-1013 H / tS -n a n j T L j - t - r t . « i n llr l/C ff y P ro g re s s P o w e re d b y T e c h no log y S D Ì 143 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR
|
OCR Scan
|
230MHz
175MHz
SD1143
SD1143
SS8SD1143-01
S88SD1
120pf
1000pf
transistor K30A
K30A transistor
D1143
UNELCO
M135
33ph
Arco 423
K30A
|
PDF
|
SD1012-3
Abstract: 1MHz VCO 2 watt carbon resistor M113 SD1012-03 2489E vco 17.5mhz 0060801
Text: H ftg r» Mnrm S iv n c r o s e m l Progress Powered by Technology 140 Commerce Drive I• I ontgom V I I I M w III W I jr w i l l w I IPA m m 18936-1013 IU w V V I \# I 1# M eryville, Tel: 215 631-9840 ^ S D 1 0 1 2 -3 RF & MICROWAVE TRANSISTORS 130 . 230MHz FM MOBILE APPLICATIONS
|
OCR Scan
|
SD1012-3
230MHz
175MHz
SD1012-03
SD1012-3
200pf.
300W1/2
1000pf
VK2K-07-3B
1MHz VCO
2 watt carbon resistor
M113
SD1012-03
2489E
vco 17.5mhz
0060801
|
PDF
|
5659065-3B
Abstract: arco 463 56-590-65-3B 56590653B
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz
|
Original
|
MRF607
To-39
MRF607
56-590-65-3B
5659065-3B
arco 463
56-590-65-3B
56590653B
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
|
Original
|
MRF140/D
MRF140
MRF140/D*
|
PDF
|
mrf641
Abstract: 1117 ADC
Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
|
Original
|
MRF641/D
MRF641
mrf641
1117 ADC
|
PDF
|
MRF607
Abstract: 56-590-65-3B
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, TO-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz
|
Original
|
MRF607
MRF607
56-590-65-3B
56-590-65-3B
|
PDF
|
RF800
Abstract: MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A
Text: ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS
|
Original
|
P-244
RF800
MRF151A
Transformer Communication Concepts
rf power amplifier transistor with s-parameters
RF800 transformer
RF-800
Unelco Metal Clad Micas
1N5347
2204B
AN211A
|
PDF
|
arco 469
Abstract: arco 465 100WPEP SD1487 arco 463
Text: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION
|
Original
|
SD1487
SD1487
arco 469
arco 465
100WPEP
arco 463
|
PDF
|
12v class d amplifier 100W
Abstract: No abstract text available
Text: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
|
Original
|
O-247
ARF463AP1
ARF463BP1
100MHz
ARF463BP1
12v class d amplifier 100W
|
PDF
|
DG704
Abstract: No abstract text available
Text: S G S -TH O M S O N SD1433 IM RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P o ut = 10 W MIN. WITH 8.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications
|
OCR Scan
|
SD1433
SD1433
Q07G44S
DG704
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-1H0MS0N SD1457 IEL[ RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF
|
OCR Scan
|
SD1457
SD1457
|
PDF
|
SU 179 transistor
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz
|
OCR Scan
|
RF173/D
SU 179 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF652 M RF652S Designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
|
OCR Scan
|
MRF652/D
MRF652
RF652S
|
PDF
|