Untitled
Abstract: No abstract text available
Text: SK10GD12T4ET 3' F HI J:E -%2&'' ,.4& */'& 'B& /K/&1 Absolute Maximum Ratings Symbol Conditions IGBT C:DL 3M F HI J: 6: 3M F OQI J: 6:RS .B'( OHPP C OQ ; 3' F QP J: OI ; H5 ; V HP C 3M F OIP J: OP [' 3' F HI J: OI ; 3' F QP J: OH ; H5 ; 6:RSF T U 6:%,+ C: F WPP CX C7D Y OI CX
|
Original
|
PDF
|
SK10GD12T4ET
|
USE OF TRANSISTOR
Abstract: pepi c thermal transistor and or IC Ultrasonic pepi testing good or bad electronic components circuit TO-220FN pn junction diode structure shin-etsu Chemical
Text: Operation notes Transistors Operation notes zSelecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Technical information Back-thinned TDI-CCD Back-thinned TDI time delay integration -CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the
|
Original
|
PDF
|
individual53
B1201,
KMPD9004E03
|
teradyne victory
Abstract: LMX2305WG-QML LMX2305WG-MLS CLC452 LMX2305 LMX2315 LMX2315WG-QML LMX2325 LMX2326 LMX2330
Text: VOLUME NO. 15 1998 Phase Lock Loops Qualified for Military and Space Applications T oday’s communications and signal processing design requirements dictate more processing capacity in smaller volumes, operation for longer periods of time, and lower power consumption.
|
Original
|
PDF
|
550MHz
teradyne victory
LMX2305WG-QML
LMX2305WG-MLS
CLC452
LMX2305
LMX2315
LMX2315WG-QML
LMX2325
LMX2326
LMX2330
|
Untitled
Abstract: No abstract text available
Text: 技術資料 裏面入射型TDI-CCD 1 裏面入射型TDI-CCDとは 裏面入射型TDI Time Delay Integration -CCDは 高 速撮像時などにおいて低照度下でも高いS/Nの画像が得 られるセンサです。TDI動作により、移動する対象物を積
|
Original
|
PDF
|
KMPD9004J03
|
Untitled
Abstract: No abstract text available
Text: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro
|
OCR Scan
|
PDF
|
0D137Ã
|
MC 2882
Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
|
OCR Scan
|
PDF
|
175MHÃ
MC 2882
2SC2862
MC 342 transistor
210B
MC 2871
|
TD 6905 S
Abstract: ci 7430 TD 6905
Text: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >
|
OCR Scan
|
PDF
|
1000PF,
CJ6-J35=
350uH
SI-30103
TD 6905 S
ci 7430
TD 6905
|
harris 6616
Abstract: No abstract text available
Text: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02
|
OCR Scan
|
PDF
|
HC6616
1x106
1x109
1x101
24-Lead
HC6616/1
pin21
HC6616/2
harris 6616
|
AAF40
Abstract: atechnology
Text: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through
|
OCR Scan
|
PDF
|
00QGM37
HC6616
1x10i4cnr2
1x109
0x10-9
1x1012rad
AAF40
atechnology
|
883ct
Abstract: No abstract text available
Text: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through
|
OCR Scan
|
PDF
|
HC6167
1x1014cnvz
1x109
1x101
1x10-®
20-pin
883ct
|
honeywell mram
Abstract: No abstract text available
Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out
|
OCR Scan
|
PDF
|
0D00fl4D
1x106
1x1014N/cm2
1x101
1x106rad
honeywell mram
|
harris 6616
Abstract: No abstract text available
Text: Honeywell HC6616 Military Products Preliminary 2K x 8 RADIATION-HARDENED ROM FEATURES O TH ER R AD IATIO N • Typical 55 ns A ccess Tim e • Fabricated w ith RICMOS Epitaxial 1.2 |im Process • Low O perating Pow er • S ynchronous O peration • Total Dose H ardness through
|
OCR Scan
|
PDF
|
HC6616
1x106
1x1014cm
1x109
harris 6616
|
Untitled
Abstract: No abstract text available
Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power
|
OCR Scan
|
PDF
|
1x10u
1x109
1x101
1x108
|
|
|
Untitled
Abstract: No abstract text available
Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02
|
OCR Scan
|
PDF
|
HC6116--TTL
1x10u
1x109
1x101
86A-6/88
|
socket g34 pinout
Abstract: smd marking WMM
Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02
|
OCR Scan
|
PDF
|
HC6664
1x10s
1x1014N/cm2
1x109
MIL-l-38535
36-LE
28-LEAD
HC6364/1
socket g34 pinout
smd marking WMM
|
HX6856
Abstract: No abstract text available
Text: b3E » Honeywell 4551Ö72 OGODTTS S71 • H 0 N 3 Military Products HON E Y I i J E L L / S S E C Preliminary 32K X 8 RADIATION-HARDENED STATIC RAM-SOI HX6856 FEATURES RADIATION OTHER Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 urn Process
|
OCR Scan
|
PDF
|
1x10s
1x101
HX6856
36-Lead
28-Lead
HX6856/1
HX6856/2
HX6856
|
6216 sram
Abstract: No abstract text available
Text: b3E D SRAMs M5 5 1 Ô7 2 DÜQQ^Dñ HONEYUELL/ S Honeywell b?b « H 0 N 3 S E C 2K x 8 RADIATION-HARDENED STATIC RAM HC6216 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2|im Process • Typical 45 ns Access T im e • Total Dose Hardness through 1x10s rad S i0 2
|
OCR Scan
|
PDF
|
HC6216
1x10s
1x109
1x1012
6216 sram
|
Untitled
Abstract: No abstract text available
Text: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02
|
OCR Scan
|
PDF
|
HC6856
1x106
1x101
1x109
256Kx
|
Untitled
Abstract: No abstract text available
Text: b3E » • *4551072 DÜGOTbl 7^b ■H0N3 Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER ■ Fabricated with RICMOS IV Bulk 0.8 jim Process • Read/Write Cycle Times s 40 ns -55 to 125°C • Total Dose Hardness through 1x10s rad(Si02)
|
OCR Scan
|
PDF
|
HC6856
1x10s
1x109
36-Lead
28-Lead
HC6856/1
1E-10
S00049
|
pepi cr
Abstract: No abstract text available
Text: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical
|
OCR Scan
|
PDF
|
MS51fl
1x106
1x101
1x109
PIN23
pepi cr
|
Untitled
Abstract: No abstract text available
Text: Honeywell HC6856 Military Products Preliminary 256K-BIT RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Bulk 0.8 im Process • Total Dose Hardness through 1x106 rad(Si02 • Optional Architecture - 32K x 8 - 256Kx 1
|
OCR Scan
|
PDF
|
HC6856
256K-BIT
1x106
256Kx
1x1014cm
1x109
1x101
|
Untitled
Abstract: No abstract text available
Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as
|
OCR Scan
|
PDF
|
1x106
1x1014cm
HC685
IL-l-38535
1x109
1x101
36-Lead
|
HC6364
Abstract: No abstract text available
Text: b3E D MSS1Ô7E ÜGQD^a T Mb Honeywell IH0N3 8K x 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES OTHER RADIATION Fabricated using DESC Approved QML 1.2 nm RICMOS1“ Process • Listed on SMD #5962-38294. Available as MIL-l-38535 QML Class Q and Class V Total Dose Hardness through
|
OCR Scan
|
PDF
|
HC6364
MIL-l-38535
1x10s
1x101
1x109
1x10eto
36-LEAD
28-LEAD
HC6364/1
HC6364
|