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    harris 6616

    Abstract: No abstract text available
    Text: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2


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    PDF 1x106 1x1014c 1x109 1x101 24-Lead HC6616/1 HC6616/2 harris 6616

    harris 6616

    Abstract: No abstract text available
    Text: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02


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    PDF HC6616 1x106 1x109 1x101 24-Lead HC6616/1 pin21 HC6616/2 harris 6616

    AAF40

    Abstract: atechnology
    Text: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through


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    PDF 00QGM37 HC6616 1x10i4cnr2 1x109 0x10-9 1x1012rad AAF40 atechnology

    harris 6616

    Abstract: No abstract text available
    Text: Honeywell HC6616 Military Products Preliminary 2K x 8 RADIATION-HARDENED ROM FEATURES O TH ER R AD IATIO N • Typical 55 ns A ccess Tim e • Fabricated w ith RICMOS Epitaxial 1.2 |im Process • Low O perating Pow er • S ynchronous O peration • Total Dose H ardness through


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    PDF HC6616 1x106 1x1014cm 1x109 harris 6616