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    Nexperia BUK9M20-40HX

    MOSFETs Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOAtechnology
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK9M20-40HX Reel 1,500 1,500
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    • 10000 $0.187
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    Nexperia BUK9M28-80EX

    MOSFETs Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOAtechnology
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK9M28-80EX Reel 3,000
    • 1 -
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    • 10000 $0.268
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    ATECHNOLOGY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    28F101

    Abstract: No abstract text available
    Text: n = 7 ^7#» S G S -T H O M S O N M 28F101 I M f l S lg ( 5 | g lllI M ( 0 ) lì ilH ( 5 g 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|oA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		28F101 PDIP32 PLCC32 TSOP32 M28F101 28F101 PDF

    M28F101

    Abstract: PDIP32 PLCC32 TSOP32 0625E-1
    Text: SGS-TtiOMSON M28F101 G fflD S Î3 (m i(g T ïïM M (g i 1 Megabit (128K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10^is


    OCR Scan     		M28F101 PDIP32 PLCC32 TSOP32 M28F101 TSOP32 PDIP32 PLCC32 0625E-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 20 August, 2013 Agenda  Motivation: Environmental and health endangerment of lead.  Situation: Lead & the use in Electronics  Status on legislation  DA5 Structure and Project:    2 Cooperations and partners Requirements, Applications and Approaches for possible solutions


    Original     		PDF

    AAF40

    Abstract: atechnology
    Text: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through


    OCR Scan     		00QGM37 HC6616 1x10i4cnr2 1x109 0x10-9 1x1012rad AAF40 atechnology PDF

    P50N05E

    Abstract: dc-dc converter royer PE-65050 p50n05 figure 19 hysteresis loop of magnetic core in flyback circuit 2n3507 1amp IRFZ44 mosfet for square wave inverter pe-6197 diode r 4kl c 46 PE-65066
    Text: L ir m Application Note 29 O ctober 1988 TECHNOLOGY Some Thoughts on DC-DC Converters Jim Williams Brian Huffman INTRODUCTION Many systems require that the primary source of DC power be converted to other voltages. Battery driven cir­ cuitry is an obvious candidate. The 6V or 12V cell in a lap­


    OCR Scan     		California92112 P50N05E dc-dc converter royer PE-65050 p50n05 figure 19 hysteresis loop of magnetic core in flyback circuit 2n3507 1amp IRFZ44 mosfet for square wave inverter pe-6197 diode r 4kl c 46 PE-65066 PDF