28F101 Search Results

flash jedec dip 32-pin

Abstract: MSM28F101
Contextual Info: O K I semiconductor MSM2 8 F101 1 M BIT 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION T he M S M 28F101 is a high speed 128K x 8-bit Flash erasable and electrically reprogram m able m em ory, ideally suited for system s requiring on-board code updates. Flash erasable m eans an

28F101

Contextual Info: n = 7 ^7#» S G S -T H O M S O N M 28F101 I M f l S lg ( 5 | g lllI M ( 0 ) lì ilH ( 5 g 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|oA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

Contextual Info: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES

Contextual Info: SGS-THOMSON M 28F101A M 28V101A CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY PR O D U C T C O N C E PT MEMORY CHIP ERASE SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for 28F101A version - 3.3V ± 0.3V for M28V101A version 12V PROGRAMMING VOLTAGE PROGRAM/ERASE CYCLES

Contextual Info: MITSUBISHI MICROCOMPUTERS 3886 Group 4\P so'"®9 S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R F LA S H M E M O R Y V E R S IO N DESCRIPTION • Power dissipation The 3886 group is the 8-bit m icrocom puter based on the 740 fa m ­ In high-speed m ode . 40 mW

Contextual Info: CAT28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: CAT28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)

xx40h

Abstract: nb2b
Contextual Info: il Il h Th Lt ST •Iff /S P relim inary E M I C O N D U C T O R CAT28F202 2 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 120/150/200 ns ■ 128K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

XcxxX

Abstract: m5m28F101J 28F101 M5M28F101
Contextual Info: 28F101 J,VP, RV-15I MITSUBISHI LSIs , 'P 0 - 1048576-BIT 131072-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5 M 28F 10 1 J , VP, R V - 151 are high -spe ed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable fo r

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

M28F101

Abstract: PDIP32 PLCC32
Contextual Info: SGS-THOMSON ^ 7 # 28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE

PP5V

Abstract: M5M28F101AFP 708-8034
Contextual Info: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI 28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro­

28F101

Abstract: 013d01 M28F101
Contextual Info: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i 28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical

M5m27c201j

Abstract: 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J
Contextual Info: PRODUCT DATA SHEET AD63 479-901 and AD51 (479-810) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD63 32 32 01 P .6 Clamshell Product Code Pins on skt Pins on Base

Contextual Info: MITSUBISHI LS Is {FLASH MEMORY MODULE FLASH MEMORY 512KX16 O 8 iM BIT Max. Access Type name Load memory time Outward dimensions Data sheet W X H X D m m ) page 118.11 X 1 7 .7 8 x 8 .7 3 / 1C (ns) MH51216FRN-10 * 100 MH51216FRN-12 ★ 120 MH51216FRN-15 ★

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

28f102

Abstract: xx40h
Contextual Info: Main Menu CAT28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels

Contextual Info: NEW PRODUCT 28F101 Series 128K x Changed from HN29C101B 8-bit CMOS Flash Memory ^ H IT A C H I Preliminary Rev. 4.4 October 14,1991 The Hitachi 28F101 is a 131,072 x 8-bit CMOS Flash Memory that is capable of insystem electrical chip erasure and reprogramming.

Am28F200

Contextual Info: Discontinued Product—Support Information Only This literature was published years prior to the establishment of Agilent Technologies as a company independent from Hewlett-Packard and describes products or services now available through Agilent. It may also refer to products/services no longer supported by Agilent.

ali 3329

Abstract: ali m 3329 ISO1941-2 ali 3329 b Ali 3329 jtag KWP2000 ISO9141-2 mr-shpc-01 ISO1941 ali 3329 e
Contextual Info: パートナーベンダ ・クロスソフト／CASE ・シミュレータ ・ミドルウェア ・OS ・評価ボード ・エミュレータ ・プログラミングツール 注：会社名及び商品名は、各社の商標または登録商標です

m5m28F101J

Contextual Info: b S M 'ìfiP S Ü0 5 3 1 b 3 Mflfl MITSUBISHI LSIs • M I T I M 5 M 2 8 F 1 01 P ,F P ,J ,V P ,R V -1 0 ,-1 2 ,-1 5 1048576-BIT 131072-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi 28F101P, FP, J, VP, RV are high-speed

CAT28F102

Contextual Info: C lA CAT2 8 F102 T A 1 _ Y s ~r Licen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)