1X10S Search Results

Contextual Info: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly

HS-26C31MS

Abstract: 26C31M HS1-26C31MSR HS26C31ms harris HS-26C31MS ER3401
Contextual Info: HS-26C31MS fü HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver December 1992 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x10s RAD/Sec (20nS Pulse) HS1-26C31MSR 16 PIN CERAMIC DUAL-IN-LINE

2 Wavelength Laser Diode

Abstract: laser 850 vcsel array
Contextual Info: AVAP - 1x10SM Single-mode VCSEL array Features • • • • • 1x10 VCSEL array 850 nm wavelength range Single-mode emission High wavelength uniformity Other configurations available on request Electro-optical characteristics for individual lasers (T = 25°C)

Contextual Info: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02

6216 sram

Contextual Info: b3E D SRAMs M5 5 1 Ô7 2 DÜQQ^Dñ HONEYUELL/ S Honeywell b?b « H 0 N 3 S E C 2K x 8 RADIATION-HARDENED STATIC RAM HC6216 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2|im Process • Typical 45 ns Access T im e • Total Dose Hardness through 1x10s rad S i0 2

socket g34 pinout

Abstract: smd marking WMM
Contextual Info: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02

Contextual Info: b3E » • *4551072 DÜGOTbl 7^b ■H0N3 Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER ■ Fabricated with RICMOS IV Bulk 0.8 jim Process • Read/Write Cycle Times s 40 ns -55 to 125°C • Total Dose Hardness through 1x10s rad(Si02)

VF150

Abstract: valpey VF150 valpey OCXO sma VF600 VFHS85 ocxo tcxo V/VF500
Contextual Info: MATEC CORP/ VALPEY-FISHER | 3 lg E » • 5 Abl~D a ^rò 0 D O Ìflà ~ Q ~ W V P c" VF500 Series DISCRETE TEMPERATURE COMPENSATED CRYSTAL OSCILLATORS TCXO Valpey-Fisher Temperature Compensated Crystal Oscillators (TCXOs) use select components which react to thermal

2N7268

Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

Hk612

Contextual Info: . _ . j| to b# dtoqlBMd. nprwluoad a r u—d, in vhoto er tn port, for m n u l M i n or Mfe by o t m m oHm t toon Am phm l - - * ” -1-1 *• “ —1 no right b granted to M m Customer SECTION 4 C -C 3 REVISIONS SYM Drawing

Contextual Info: MIC2171 MIC2171 100kHz 2.5A Switching Regulator Preliminary Information General Description Features The MIC2171 is a complete 100kHz SM PS current-mode controller with an internal 65V 2.5A power switch. 2.5A, 65V internal switch rating 3V to 40V input voltage range

Contextual Info: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled

Contextual Info: p P jp i G E C P L E S S E Y ADVANCE DATA SE MI CONDU CTORS DS3694-2.1 MA9564 HIGH TRANSIENT/RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9564 64k Static RAM is configured as 8192 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.Sjim technology. The device has been designed specifically for high

Contextual Info: Si GEC P I E S S E Y SE M I CO N D U CT O RS DS3578-2 4 MA2910 RADIATION HARD MICROPROGRAM CONTROLLER The industry standard MA2910 Microprogram Controller forms part of the MA2900 family of devices. Offering a building block approach to microcomputer and controller design, each device in the range is expandable

Contextual Info: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)

HR2340

Abstract: sram pull down honeywell memory sram
Contextual Info: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec

DQ4-21

Contextual Info: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process

PURE 5001

Abstract: SP 5001 IC K6275
Contextual Info: f Amphonol Corporation and • d*ltv«r«d o not to bi dlwlon d, reproduced or und, In ire or aalo by anyono ottior than Amphonol e»rt, & that no right 1» granted to dtseloM R E V IS IO N S Customer SYM Drawl >ionn ECN DESCRIPTIO N A HK4071 DATE APPR O VED

K627

Abstract: IC TRAY K6275
Contextual Info: Thl* document la the property of Amphenol Corporation ond la deltvared on the « x p n n condition that II I* not to bi dlnloeed, reproduced or imd, lr whole or In pari, for manufacture or aale by anyona oltiar than Amphenol Corporation without tta prior concert. & that no right 1» grantad to dtseloM

Contextual Info: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE7S30 HEXFET TRANSISTORS IRHE8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40i2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45Í2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: International S R ectffier Preliminary Data Sheet No. PD-9.1332 IRHM7260 IRHM8260 REPETITIVE AVALANCHE ANO dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 200Volt, 0.070ft, MEGA RAD HARD HEXFET International Rectifier’s RAD H ARD technology

Contextual Info: Data Sheet No. PD-9.676A INTERNATIONAL RECTIFIER I @ R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7130 IRHB130 MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown