Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HR2340 Search Results

    HR2340 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HR2340 Honeywell RICMOS GATE ARRAY Original PDF

    HR2340 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HR2000

    Abstract: HR2010 HR2065 HR2090 HR2210 HR2125 HR2340 "rad" sram
    Text: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    Original
    HR2000 1x106 1x109 1x1012 1x10-10 1x1014/cm2 HR2000 HR2010 HR2065 HR2090 HR2210 HR2125 HR2340 "rad" sram PDF

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original
    MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA PDF

    HR2065

    Abstract: HR2090 HR2010 HR2125 HR2210 HR2340 HR2000
    Text: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    Original
    HR2000 1x106 1x109 1x1012 1x10-10 1x1014/cm2 HR2000 HR2065 HR2090 HR2010 HR2125 HR2210 HR2340 PDF

    HR2340

    Abstract: sram pull down honeywell memory sram
    Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec


    OCR Scan
    1x106 1x103rad 1x1012rad HR2340 HR2340 sram pull down honeywell memory sram PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    OCR Scan
    HR2000 1x109rad 1x101 1x101/cm2 HR2000 PDF

    207K AW

    Abstract: No abstract text available
    Text: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    OCR Scan
    1x10M 1x106 1x109 HR2000 HR2000 207K AW PDF