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    NDH8301N Search Results

    NDH8301N Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDH8301N Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDH8301N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDH8301N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDH8301N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDH8301N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDH8301N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDH8301N

    Abstract: No abstract text available
    Text: N May 1996 ADVANCE INFORMATION NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology.


    Original     		PDF NDH8301N 135oC/W 0025in2 NDH8301N

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH8301N
    Text: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDH8301N CBVK741B019 F63TNR F852 FDR835N NDH8301N

    NDH8301N

    Abstract: No abstract text available
    Text: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDH8301N NDH8301N

    NDH8301N

    Abstract: No abstract text available
    Text: N December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDH8301N NDH8301N

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    NDH8301N

    Abstract: No abstract text available
    Text: & N at i o n a l June 1996 Semiconductor" ADVANCE INFORMATION NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er field effect transistors are produced using N ationals proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDH8301N 0025in2 300ps, b50113D NDH8301N

    h830

    Abstract: No abstract text available
    Text: FAIRCHILD Decem ber 1996 SEM IC O N D U C TO R t m NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDH8301N h830

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDH8301N NDH8301N

    NDT453N

    Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
    Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |


    OCR Scan     		PDF T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N