Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NDH8501N Search Results

    SF Impression Pixel

    NDH8501N Price and Stock

    Fairchild Semiconductor Corporation NDH8501N

    DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA NDH8501N 42,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    NDH8501N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDH8501N Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDH8501N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDH8501N Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDH8501N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NDH8501N

    Abstract: No abstract text available
    Text: December 1996 NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDH8501N NDH8501N PDF

    NDH8501N

    Abstract: No abstract text available
    Text: FAIRCHILD Decem ber 1996 MICDNDUCTOR NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		NDH8501N NDH8501N PDF

    NDH8501N

    Abstract: No abstract text available
    Text: N September 1996 PRELIMINARY NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDH8501N NDH8501N PDF

    Untitled

    Abstract: No abstract text available
    Text: R A I R C H I I- D December 1996 M IC D N D U C T O R ^ NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDH8501N NDH8501N PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD December 1996 Ml CONDUCTOR NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features S upe rS O T -8 N -C hannel en hancem ent m ode pow er field effe ct tra nsistors are produce d using Fairchild's proprietary,


    OCR Scan     		NDH8501N H8501N PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    NDT453N

    Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
    Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |


    OCR Scan     		T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF