"256k x 4" dram refresh
Abstract: SDQ11 SDC-1
Text: ADVANCE MT42C256K16C2 256K X 16 VRAM M IC R O N FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% pow er supply (consult factory regarding 3.3V operation)
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MT42C256K16C2
512-cycle
512x16
64-Pin
"256k x 4" dram refresh
SDQ11
SDC-1
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Untitled
Abstract: No abstract text available
Text: MI CR ON T E C H N O L O G Y bOE D INC 000^^23 AMT • PIRN ADVANCE MT42C256K16C2 256K X 16 VRAM I^ IK Z R O N VRAM 256K X 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, timing and functions • High-performance, CMOS silicon-gate process
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MT42C256K16C2
512x16
512-cycle
MT42C256K16C2
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT42C256K16A1 256K X 16 VRAM | ^ IC = R O N VRAM 256Kx 16 DRAM WITH 512x16 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply
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MT42C256K16A1
256Kx
512x16
512-cycle
350mW
64-Pin
MT42C256K16A1
2C256K16A1
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MT42C256K16A
Abstract: MT42C256
Text: ADVANCE MT42C256K16A1 256K X 16 VRAM M IC R O N VRAM 256Kx 16 DRAM WITH 512x16 SAM PIN ASSIGNMENT T o d View • In d u s try -s ta n d a rd p in o u t, tim in g a n d fu n ctio n s • H ig h -p e rfo rm a n c e , C M O S silicon-gate p ro cess • Single +5V ±10% p o w e r s u p p ly
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MT42C256K16A1
512-cycle
accMT42C256K16A1
MT42C256K16A
MT42C256
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Untitled
Abstract: No abstract text available
Text: MI CR ON T E C H N O L O G Y INC bDE D bl l l S H T D O D b TE l T77 • MRN ADVANCE MT42C256K16C1 256K X 16 VRAM VRAM 256K X 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • In d u stry -sta n d a rd p in o u t, tim in g an d fu n ctio n s • H ig h -p erfo rm an ce, C M O S silico n -g a te p ro cess
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MT42C256K16C1
512x16
12-cy
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Multiport Video RAM 256k x 16
Abstract: vram dual port SDQ14
Text: ADVANCE M MT42C256K16A1 2 5 6 K x 16 V R A M IC R O N VRAM 256K x 16 DRAM WITH 512x16 SAM FEATURES • • • • 64-Pin SOP Vcc TR Vss SDQQ DQO SDQ1 DQ1 Vcc SDQ2 002 SOQ3 Vss SOQ4 004 S0Q5 005 Vcc SDQ6 0Q6 SDQ7 007 Vm WEL WEU RAS A8 A7 A6 A5 A4 Voc JEDEC Standard Mandatory Function set plus
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MT42C256K16A1
512-cycle
350mW
512x16
64-Pin
Multiport Video RAM 256k x 16
vram dual port
SDQ14
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SDQ11
Abstract: vram dual port 256K X 16 MULTIPORT VIDEO RAM
Text: ADVANCE MT42C256K16A1 256K x 16 VRAM b l l l S M I D 0 D S 33 7 TS1 URN M IC R O N SSE D MICRON T E C H N O L O G Y INC VRAM 256Kx 16 DRAM WITH 512x16 SAM - 7 - 0 FEATURES Industry standard pinout, timing, and functions
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MT42C256K16A1
512-cycle
350mW
256Kx
512x16
T--46--23--20
SDQ11
vram dual port
256K X 16 MULTIPORT VIDEO RAM
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VRAM
Abstract: Dual-Port V-RAM sam plus SDQ14 sdc1 flash MT42C256
Text: ADVANCE M T42C 256K 16C 1 2 56K x 16 V R A M |U |IC R O N 256K x 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply
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512-cycle
512x16
64-Pin
MT42C256K16C1
VRAM
Dual-Port V-RAM
sam plus
SDQ14
sdc1 flash
MT42C256
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64Kx4
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
64Kx8
256KX4
KM428C64
uPD23C4000
93c46 atmel
sony Cross Reference
atmel 93c66
HN62404P
93C46L
rom at29c010
Hitachi SRAM cross reference
x2864a
UPD23C2000
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
KM428C64
KM424C256
KM424C256A
TC524256
TC55B4257
93C46L
UPD23C4000
atmel 93c66
KM628512
Hitachi SRAM cross reference
atmel 93c57
TC55B465
upd23c8000
93c56v
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MT42C256K16A
Abstract: No abstract text available
Text: ADVANCE M T42C256K16A1 256K X 16 VRAM | U |IC R O N 256K x 16 DRAM WITH 512x16 SAM VRAM PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation)
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T42C256K16A1
512-cycle
512x16
64-Pin
MT42C256K16A1
MT42C256K16A
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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