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    MJ11011 Price and Stock

    Solid State Devices Inc (SSDI) MJ11011

    Darlington Transistor, Pnp, -60V, To-3; Transistor Polarity:Pnp; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:60V Rohs Compliant: Yes |Solid State MJ11011
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MJ11011 Bulk 25
    • 1 -
    • 10 -
    • 100 $7.35
    • 1000 $6.94
    • 10000 $6.94
    		Buy Now

    New Jersey Semiconductor Products, Inc. MJ11011

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MJ11011 698 1
    • 1 $11.7
    • 10 $8.775
    • 100 $7.02
    • 1000 $6.7275
    • 10000 $6.7275
    		Buy Now

    Motorola Mobility LLC MJ11011

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MJ11011 25 1
    • 1 $8.96
    • 10 $4.48
    • 100 $4.48
    • 1000 $4.48
    • 10000 $4.48
    		Buy Now

    MJ11011 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ11011 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ11011 Wing Shing Computer Components PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original PDF
    MJ11011 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ11011 Mospec POWER TRANSISTORS(30A,60-120V,200W) Scan PDF
    MJ11011 Mospec Complementary Silicon Power Darlington Transistor Scan PDF
    MJ11011 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ11011 Motorola European Master Selection Guide 1986 Scan PDF
    MJ11011 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ11011 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ11011 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ11011 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ11011 STMicroelectronics Shortform Data Book 1988 Short Form PDF

    MJ11011 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MJ11011 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200


    Original     		PDF MJ11011

    MJ11016

    Abstract: MJ11011 MJ11015 MJ11014 MJ11012 MJ11013 P003N MALAYSIA MJ11015
    Text: MJ11011/13/15 MJ11012/14/16 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic


    Original     		PDF MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016 MJ11011, MJ11011 MJ11012 MJ11013 P003N MALAYSIA MJ11015

    SWITCHING TRANSISTOR 60V

    Abstract: MJ11011
    Text: PNP MJ11011 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ11011 SWITCHING TRANSISTOR 60V MJ11011

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    mj11011

    Abstract: MJ11012 DARLINGTON 20A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A


    Original     		PDF MJ11011 mj11011 MJ11012 DARLINGTON 20A

    MJ11015

    Abstract: mj11011 2N6285 2N6286 2N6287 CP547 MJ11013
    Text: PROCESS CP547 Central Power Transistor TM Semiconductor Corp. PNP - Darlington Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 195 X 195 MILS Die Thickness 12 MILS Base Bonding Pad Area 29 X 29 MILS Emitter Bonding Pad Area 61 X 35 MILS Top Side Metalization


    Original     		PDF CP547 MJ11011 2N6285 MJ11013 2N6286 MJ11015 2N6287 2N6285 2N6286 2N6287 CP547

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    mj11015

    Abstract: MJ11014 MJ11011
    Text: r Z T S G S -T H O M MJ11011/1 3/15 MJ11012/14/16 S O N mlM MiniaMgnigCTfsiMiKe^ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016are silicon


    OCR Scan     		PDF MJ11011/1 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016are MJ11011, MJ11011

    MJ11011

    Abstract: MJ11014
    Text: MJ11011/13/15 MJ11012/14/16 SGS-THOMSON MGMlLIOTIlMCt COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic


    OCR Scan     		PDF MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11011, MJ11011

    mj11011

    Abstract: MJ11016 MJ11013 MJ11014 MJ11015 MJ11012 Variable resistor 10K ohm transistor MJ11016
    Text: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for use as output devices in complementary general purpose amplifier applications. Collector-Emitter Voltage ^C EO COIIector-Base Voltage V C BO Emitter-Base Voltage 30 AMPERE COMPLEMENTARY


    OCR Scan     		PDF MJ11011 MJ11012 MJ11013 MJ11014 MJ11015 MJ11016 MJ11014 MJ11016 MJ11012 Variable resistor 10K ohm transistor MJ11016

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C