mj15052
Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
Text: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of
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AN930
AN930/D
hull111111
mj15052
mj-15052
CFL UPS 45 W circuit schematic diagram
MJ15052 Motorola
schematic diagram UPS ica
MJ15003 internal diagram
power supply tester schematic diagram
pulse generator MC14001
AT330
transistor MJ11032
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N3055
BU108
AN415A
MJE2955T ST
BDX54
2n3055 audio amplifier application note
BU326
BU100
mje13005
BDV64
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mje2955t
Abstract: mje3055t MJE2955TG MJE305 MJE30*T transistor MJE3055T
Text: MJE2955T PNP MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A
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MJE2955T
MJE3055T
MJE2955T/D
mje2955t
mje3055t
MJE2955TG
MJE305
MJE30*T
transistor MJE3055T
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mje3055T data
Abstract: No abstract text available
Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
MJE3055T
mje3055T data
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pnp mje2955t
Abstract: MJE2955T MJE3055T mje3055T data
Text: ON Semiconductort PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
r14525
MJE2955T/D
pnp mje2955t
MJE2955T
MJE3055T
mje3055T data
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Untitled
Abstract: No abstract text available
Text: MJE2955T PNP MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A
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MJE2955T
MJE3055T
MJE2955T/D
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pnp mje2955t
Abstract: MJE2955T NT 407 F TRANSISTOR MJE2955T-D MJE3055T mje3055T data
Text: MOTOROLA Order this document by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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MJE2955T/D
MJE2955T
MJE3055T
MJE2955T/D*
pnp mje2955t
MJE2955T
NT 407 F TRANSISTOR
MJE2955T-D
MJE3055T
mje3055T data
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MJE3055TG
Abstract: MJE2955TG MJE3055T MJE2955T
Text: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS
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MJE2955T
MJE3055T
MJE3055TG
MJE2955TG
MJE3055T
MJE2955T
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pnp mje2955t
Abstract: MJE3055T MJE2955T
Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
r14525
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pnp mje2955t
MJE3055T
MJE2955T
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MJE2955TG
Abstract: mje3055t
Text: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features http://onsemi.com 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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MJE2955T
MJE3055T
-55licable
MJE2955T/D
MJE2955TG
mje3055t
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MJE3055TG
Abstract: MJE2955TG MJE2955T MJE3055T AN415A MJE3055 MJE305
Text: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS
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MJE2955T
MJE3055T
MJE2955T/D
MJE3055TG
MJE2955TG
MJE2955T
MJE3055T
AN415A
MJE3055
MJE305
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MJE2955TG
Abstract: MJE3055T MJE3055TG MJE2955T
Text: MJE2955T PNP MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A
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MJE2955T
MJE3055T
MJE2955T/D
MJE2955TG
MJE3055T
MJE3055TG
MJE2955T
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8D534
Abstract: BD538 8D536 B0535 8C407 BD535B BD537B motorola BD534
Text: MOTOROLA SC {XSTRS/R F> T b 7asM _q oaat.il ? 96D 80 6 1 1. 6 3 6 7 2 5 4 . MOTOROLA SC X S T R S / R F • 3 2 > -c2 / MOTOROLA m SEMICONDUCTOR TECHNICAL DATA NPN PNP BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . . designed for use in general purpose amplifier and switching
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BD533,
BD534
BD535,
BD537,
BD533
BD535
BD537
BD534
BD536
BD538
8D534
BD538
8D536
B0535
8C407
BD535B
BD537B
motorola BD534
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2955T
Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes
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2955T*
3055T*
MJE3055T,
MJE2955T
MJE2955T
2955T
JE3055T
3055t
JE3055
je 3055t
JE2955T
AN415A
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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sm 0038
Abstract: K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B
Text: MOTOROLA SC XSTRS/R 12E D | F b 3 b 7 2 S4 GGâM â? T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25 AM PERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high current, high speed, high power applications.
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b3b72S4
20atlc
BDY58
AN415A)
sm 0038
K 1113
BDY58
Transistor 126
BUV10N
transistor 12E
transistor 1B
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Untitled
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R F MOTOROLA 12E O | t.3b7BSt OOttlfllS 1 | r.3i./s _ SEMICONDUCTOR TECHNICAL DATA 40 A M P E R E S SWITCHMODE* S E R IE S NPN SILICON POWER TRAN SISTOR NPN SILICON POWER M ETA L TRANSISTOR . designed for high speed, high current, high power and'low cost
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AN415A)
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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BD536 equivalent
Abstract: B0536 BD535 equivalent BDB38 80614 Motorola 8061 b0538 8D535 BD638 8053
Text: MOTOROLA SC ÍXSTRS/R F> ^ 6367254 MOTOROLA SC XSTRS/R P E 1 ^ 3 1 . 7 551* QQflQ b l l 96D F 8061 1 D 7 z J3 - J!- 3 2 > - c 2 / MOTOROLA SEM ICONDUCTOR TECHNICAL DATA NPN PNP BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
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BD533,
BD534
BD535,
B0536
BD537,
BD538
O-220
BD536 equivalent
B0536
BD535 equivalent
BDB38
80614
Motorola 8061
b0538
8D535
BD638
8053
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MPSU55
Abstract: MPSU56 MPS-U56 MPS-U55 MPS-U05 MPS-U06 MPSU06 transistor transistor mpsu55 MPSU56 transistor MPSU05
Text: MPS-U55 SILICON MPS-U56 PNP SILICON ANN U LA R A M P L IFIE R TRANSISTORS PNP SILICON A M P L IFIE R TRANSISTORS . . . designed for general-purpose, high-voltage amplifier and driver applications. • High Collector-Emitter Breakdown Voltage — BV c e O = 60 Vdc (Min) @ I q = 1.0 mAdc - MPS-U55
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MPS-U55
MPS-U56
MPS-U55
MPS-U05
MPS-U06
MPS-U56
AN-415A)
MPSU55
MPSU56
MPS-U06
MPSU06 transistor
transistor mpsu55
MPSU56 transistor
MPSU05
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Mullard technical communications
Abstract: 2N6875 thermal resistance of low power semiconductor 2N5974 2N6309 AN415A 2N5983 motorola application note AN-569 2N3444 2N3252
Text: AN-569 Application Note TRANSIENT THERMAL RESISTANCE GENERAL DATA AND ITS USE Prepared by Bill Roehr and Bryce Shiner Applications Engineering Data illustrating the thermal response of a number of semiconductor die and package combinations are given. Its use,
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AN-569
2091i
1PHX7559^
Mullard technical communications
2N6875
thermal resistance of low power semiconductor
2N5974
2N6309
AN415A
2N5983
motorola application note AN-569
2N3444
2N3252
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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IR 92 0151
Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.
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AN415A)
IR 92 0151
transistor BU 109
bu326
t 326 Transistor
transistor BU 184
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