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    BDV64 Price and Stock

    Central Semiconductor Corp BDV64

    TRANS PNP 60V 12A TO218
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    Central Semiconductor Corp BDV64A

    TRANS PNP 80V 12A TO218
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    onsemi BDV64B

    TRANS PNP DARL 100V 10A SOT93
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    Bristol Electronics BDV64B 20
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    Quest Components BDV64B 16
    • 1 $2.1
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    Rochester Electronics BDV64B 249 1
    • 1 $0.9968
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    Central Semiconductor Corp BDV64B

    TRANS PNP 100V 12A TO218
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    Bourns Inc BDV64-S

    TRANS PNP DARL 60V 12A SOT93
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    DigiKey BDV64-S Tube 900
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    Avnet Abacus BDV64-S 143 Weeks 9,000
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    BDV64 Datasheets (91)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDV64 Bourns PNP SILICON POWER DARLINGTONS Original PDF
    BDV64 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    BDV64 Power Innovations PNP SILICON POWER DARLINGTONS Original PDF
    BDV64 Central Semiconductor Power Transistors Scan PDF
    BDV64 Mospec POWER TRANSISTORS(12A,125W) Scan PDF
    BDV64 Motorola European Master Selection Guide 1986 Scan PDF
    BDV64 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDV64 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDV64 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDV64 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDV64 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDV64 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDV64 Unknown Transistor Replacements Scan PDF
    BDV64 Unknown Cross Reference Datasheet Scan PDF
    BDV64 Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDV64 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BDV64 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDV64 Transys Electronics PNP SILICON POWER DARLINGTONS Scan PDF
    BDV64 Transys Electronics Darlington Bipolar Transistor, PNP, 60V at Tc=25C, TO-218, 3-Pin Scan PDF
    BDV64A Bourns PNP SILICON POWER DARLINGTONS Original PDF

    BDV64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDV65

    Abstract: BDV65B BDV65A BDV65C BDV64 BDV64A BDV64B BDV64C
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


    Original     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65B BDV65 BDV65B BDV65A BDV65C BDV64 BDV64A BDV64C

    BDV64B

    Abstract: BDV65B
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • w DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B BDV65B/D BDV64B BDV65B

    BDV64B

    Abstract: BDV65B bdv64b transistor
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B
    Text: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


    Original     		PDF O-218 BDV64B BDW84A BDV65 BDV64 BDV65A BDV64A BDV65B BDW83A BDW83B tip142/TIP147 AMPLIFIER CIRCUIT BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B

    BDV64

    Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


    Original     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65B BDV64 BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C

    BDV65B

    Abstract: BDV65 bdv65a BDV64 BDV64A BDV64B BDV64C BDV65C
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● JUNE 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current


    Original     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65 BDV65B BDV65 bdv65a BDV64 BDV64A BDV64C BDV65C

    bdv64b

    Abstract: BDV64BG transistor packages sot93 BDV65B BDV65BG
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − HFE = 1000 (min.) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B BDV65B/D BDV64BG transistor packages sot93 BDV65BG

    BDV64

    Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
    Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


    Original     		PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64B BDV64 BDV64A BDV64B BDV64C BDV65 BDV65A BDV65C

    Motorola Power Transistor Data Book

    Abstract: Motorola Bipolar Power Transistor Data MOTOROLA TRANSISTOR T2 03 transistor BDV65B bipolar transistor Motorola 801 TRansistor L 701 power transistors 638 POWER TRANSISTOR MOTOROLA
    Text: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc


    Original     		PDF BDV65B/D BDV65B BDV64B BDV65B/D* Motorola Power Transistor Data Book Motorola Bipolar Power Transistor Data MOTOROLA TRANSISTOR T2 03 transistor BDV65B bipolar transistor Motorola 801 TRansistor L 701 power transistors 638 POWER TRANSISTOR MOTOROLA

    BDV65

    Abstract: BDV65B transistors BDV65c BDV64A BDV65A BDV65C
    Text: BDV65A, B, C NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV65 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV64A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BDV65A, BDV65 BDV64A, BDV65 BDV65A BDV65B BDV65C BDV65B transistors BDV65c BDV64A BDV65A BDV65C

    Untitled

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature


    Original     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C BDV65 BDV65A

    BDV65B equivalent

    Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BDV65B equivalent buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B
    Text: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


    Original     		PDF O-218 BDV64B BDW83A BDW84A BDW83B BDW84B BDW83C BDW84C TIP33A TIP34A tip142/TIP147 AMPLIFIER CIRCUIT tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B

    BDV64B

    Abstract: BDV65B bdv64b transistor
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor

    darlington transistor with built-in temperature c

    Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
    Text: Æ &MOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV64 .designed for general-purpose amplifier and low speed switching applications NPN BDV65 FEATURES: BDV64A BDV65A * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - BDV64.BDV65


    OCR Scan     		PDF BDV64 BDV65 BDV64A BDV65A BDV64B BDV65B BDV65A darlington transistor with built-in temperature c BDV65 BDV65B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL SLE J> • 711DÛ2b GCm33SG 4b2 « P H I N Philips Components BDV64F/64AF/64BF/64CF r"33"^ Data sheet status Product specification date of issue December 1990 PNP Silicon Darlington power transistors DESCRIPTION PINNING - SOT199 PIN 1


    OCR Scan     		PDF GCm33SG BDV64F/64AF/64BF/64CF OT199 BDV65F/ 65AF/65BF/65CF. BDV64F BDV64AF BDV64BF BDV64CF

    BDV64B

    Abstract: bdv64 Bdv64a
    Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current


    OCR Scan     		PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B Bdv64a

    bdv64b transistor

    Abstract: ic 7493 BDV64 BDV64B transistors BDV64B BDV65 7Z77491
    Text: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n olithic D arlington circu it fo r audio o u tp u t stages and general a m p lifie r and switching applications. N-P-N complements are B D V 65, 65A, 65B and 65C.


    OCR Scan     		PDF BDV64; BDV64B; BDV65, BDV64 7Z9669S bdv64b transistor ic 7493 BDV64B transistors BDV64B BDV65 7Z77491

    BDV64B sgs-thomson

    Abstract: dv65a BDV64
    Text: BDV64/A/B BDV65/A/B SGS-THOMSON ILEO««! POWER DARLINGTONS DESCRIPTION The BDV65, BDV65A, BDV65B, are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are intended for use In power linear


    OCR Scan     		PDF BDV64/A/B BDV65/A/B BDV65, BDV65A, BDV65B, OT-93 BDV64A, BDV64B BDV64, BDV64 BDV64B sgs-thomson dv65a

    TS-7P

    Abstract: T-33-Z bdv65
    Text: BDV65; 65A BDV65B; 65C SbE D PHILIPS INTERNATIONAL • 7110fl2b 0D433b0 3D1 H P H I N T'33-Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. PNP complements are BDV64, 64B and 64C.


    OCR Scan     		PDF BDV65; BDV65B; 7110fl2b 0D433b0 BDV64, BDV65 OT-93. BDV65j 711Dfl2b DD433bb TS-7P T-33-Z

    BDV65

    Abstract: No abstract text available
    Text: ¿57 7^537 ^ T rZ 3 ~ Z ° \ G02Ô435 b • S G S -T H O M S O N RfflDO^HLHOTT^QlMO ! BDV64/A/B BDV65/A/B S G S-THOMSON 3QE D POWER DARLINGTONS D ESC RIPTIO N The BDV65, BDV65A, BDV65B, are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic


    OCR Scan     		PDF BDV64/A/B BDV65/A/B BDV65, BDV65A, BDV65B, OT-93 BDV64A, BDV64B BDV64, BDV64 BDV65

    tip142/TIP3055

    Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
    Text: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A


    OCR Scan     		PDF O-218 BDV65 BDV64 BDV65A BDV64A BDV65B BDV64B BDW83A BDW84A BDW83B tip142/TIP3055 BDW83C

    BDV65

    Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
    Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power innovations Limited, UK • Designed or Complementary Use with BDV64, BOV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current •


    OCR Scan     		PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BOV64A, BDV64B BDV64C OT-93 BOV65 BDV65 bdv65b 8DV65C BOV64A bdv65a

    BDV65, BDV64

    Abstract: BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC
    Text: MOTORCLA SC XSTRS /R F 12E D | b3b7254 D 00‘47bcl 7 | NPN BDV65 BDV65A BDV65B BDV6SC MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP BDV64 BDV64A BDV64B BDV64C DARLING TO N S 10 AM PERES COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF b3b7254 T-33-tf T-33-U BDV65 BDV65A BDV65B BDV64 BDV64A BDV64B BDV64C BDV65, BDV64 BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC