Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGF4918 Search Results

    SF Impression Pixel

    MGF4918 Price and Stock

    MIT MGF4918G

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MGF4918G 1,692
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    mit MGF4918D29

    SUPER LOW NOISE INGAAS HEMT RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET ; ECCN: EAR99
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGF4918D29 19,950
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    mit MGF4918D

    Transistor ; ECCN: EAR99
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGF4918D 732
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    MGF4918 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF4918D Mitsubishi TAPE CARRIER SUPER LOW NOISE INGAAS HEMT Scan PDF

    MGF4918 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGF4918D

    Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
    Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F


    OCR Scan     		GD-16 GD-15 GD-18 MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E12 MGF4918D MGF4919F MGF4919 MGF4319F MGF-4317D MGF4914D PDF

    MGF4313

    Abstract: MGF4919
    Text: LOW NOISE InGaAs H EM T M G F4xxxx Series Freq. GHz NFmin. (dB) 12 0 .8 0 0 .5 5 11.5 GG Palette 12 11.5 Palette 12 0 .4 5 11.5 GG GG 12 0 .7 5 0 .6 5 11.5 IG Palette 12 11.5 IG Palette I T yp ical C haracteristics 12 0 .5 5 11.5 IG MGF4714AP NH3F4814E MGF4918E


    OCR Scan     		M6f4314£ MGF4313E MQF43t9iE MOF441 MGF44I7D MGF4714AP NH3F4814E MGF4918E MGF4919E MGF4313 MGF4919 PDF

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan     		MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A PDF

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p PDF

    MGF4310

    Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
    Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.


    OCR Scan     		MGFC4410 MGF4310 MGF4910 200um 8E-30 MGF4914E-01 MGF4918E-01 12GHz, MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318 PDF

    MGF4919

    Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to


    OCR Scan     		F4910E F4914E F4918E F4919E MGF4910E GF4914E GF4919E MGF4919 mgf4918 mgf4914 MGF4910 gs 431 transistor PDF

    MGF4918D

    Abstract: MGF4914D mitsubishi mgf M5M27C102 MGF4910D MGF4316D MGF4916C mgf4916d A0523 MGF4917
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: mtlimeters (inches)


    OCR Scan     		MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: -to-id-25 MGF4918D MGF4914D mitsubishi mgf M5M27C102 MGF4316D MGF4916C mgf4916d A0523 MGF4917 PDF

    4910E

    Abstract: MGF4914E MGF4918E
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series SUPER LOW NOISE InGaAs H E M T j DESCRIPTION The M G F4910E OUTLINE DRAWING series su per-lo w -n oise HEMT U n it m illim e te rs inches (High Electron M o bility Transistor) is designed fo r use in X to


    OCR Scan     		F4910E 4910E MGF4914E MGF4918E PDF

    MGF4918D

    Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
    Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGF4910D 12GHz F4914D: F4916D: F4917D: F4918D: 12GHz MGF4914D MGF4918D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d PDF