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    MCP 1GB 512MB 130 Search Results

    MCP 1GB 512MB 130 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM3352BZCE30R Texas Instruments Sitara Processor: Arm Cortex-A8, 1Gb Ethernet, Display 298-NFBGA Visit Texas Instruments
    AM3352BZCZD80 Texas Instruments Sitara Processor: Arm Cortex-A8, 1Gb Ethernet, Display 324-NFBGA -40 to 90 Visit Texas Instruments Buy
    AM3352BZCZA100 Texas Instruments Sitara Processor: Arm Cortex-A8, 1Gb Ethernet, Display 324-NFBGA -40 to 105 Visit Texas Instruments Buy
    AM3352BZCE60 Texas Instruments Sitara Processor: Arm Cortex-A8, 1Gb Ethernet, Display 298-NFBGA 0 to 90 Visit Texas Instruments Buy
    AM3352BZCEA30 Texas Instruments Sitara Processor: Arm Cortex-A8, 1Gb Ethernet, Display 298-NFBGA -40 to 105 Visit Texas Instruments Buy

    MCP 1GB 512MB 130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    130ball mcp

    Abstract: MCP NAND MT29C1 MCP LPDDR 1Gb 512Mb MCP 1Gb 512Mb 130 MT29C
    Text: Specifications Data Sheets Pa11 Status Code: Production ~ Data sheet: 130-ball 8 x NAND Density: 1Gb Wi<nh: x8 LPDDR Density: 512Mb LPSOR Density: 9mm NAND • LPDDR MCP J49K ~ Rev. Date: 0112011, File Size: 3.87 MB Seconda1y Wi<nh: x32 RoHS: Yes vonage: 1. 7V-1.9V


    Original     		PDF 512Mb 130-ball MT29C1 G12MAAOYAMO-S 130ball mcp MCP NAND MCP LPDDR 1Gb 512Mb MCP 1Gb 512Mb 130 MT29C

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    NOR Flash

    Abstract: FLASH NOR 64mb 512MB NOR FLASH MCP market "NOR Flash" 512MB 1GB EASY BGA NOR FLASH ST nor flash 130nm
    Text: NOR Flash memories Advanced solutions for wireless applications STMicroelectronics is acknowledged as a leading supplier of the most advanced and competitive memory products available. The NOR Flash range is part of this offering, developed to meet the growing demands of the latest wireless


    Original     		PDF app128Mb 8/16/32/64Mb FLNORMOB1005 NOR Flash FLASH NOR 64mb 512MB NOR FLASH MCP market "NOR Flash" 512MB 1GB EASY BGA NOR FLASH ST nor flash 130nm

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    s3c2442

    Abstract: sc32442 Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash
    Text: Samsung SC32442 MSP Multi Stacked Package Leading-Edge Application Processor with single package incorporating Memory MCP Product Brief SC32442 MSP product is a proprietary solution provided exclusively by Samsung Electronics. SC32442 includes an S3C2442 AP


    Original     		PDF SC32442 S3C2442 ARM920T 512Mb 128MB Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		PDF 128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    S25FL256

    Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
    Text: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:


    Original     		PDF 128Mb 256Mb 512Mb 43715C S25FL256 S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K

    MD4832-D512-V3Q18-X-P

    Abstract: MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual
    Text: DiskOnChip -Based MCP Including Mobile DiskOnChip G3 and Mobile RAM Data Sheet, February 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		PDF 97-DT-0803-00 MD4832-D512-V3Q18-X-P MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    camera interface with arm microcontroller

    Abstract: ac97 with microcontroller samsung s3c2440 arm920t S3C2440 mobile camera interface microcontroller s3c2440 arm ITU656-format camera interface microcontroller Samsung s3c2440 S3C2410X
    Text: SSppeecc. e c e n c a AAddvvan Product Technical Brief S3C2440X Series Rev 2.0, Oct. 2003 S3C2440X is a derivative product of Samsung’s S3C24XXX family of microprocessors for mobile communication market. The S3C2440X’s main enhancement over the baseline product, S3C2410X,


    Original     		PDF S3C2440X S3C24XXX S3C2410X, ARM920T 16/32-bit camera interface with arm microcontroller ac97 with microcontroller samsung s3c2440 arm920t S3C2440 mobile camera interface microcontroller s3c2440 arm ITU656-format camera interface microcontroller Samsung s3c2440 S3C2410X

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


    Original     		PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi

    sagami

    Abstract: m5m5v108c SRAM QFP 64MB cmos dram 8m x 16 128k x8 SRAM TSOP 8M X 16 SDRAM prx usa Mitsubishi ECL Memory
    Text: L-11003-0I MITSUBISHI ELECTRIC General REV BUSINESS OPERATION NETWORK AND PRODUCTION FACILITIES CUSTOMER MARKETING PRODUCTION PLANNING PRODUCTION DEVELOPMENT MARKETING & SALES MEMORY IC DRAM,SRAM,FLASH,MODULE,PC CARD DIV. •PLANNING & MARKETING ADMINISTRATION DIV.


    Original     		PDF L-11003-0I sagami m5m5v108c SRAM QFP 64MB cmos dram 8m x 16 128k x8 SRAM TSOP 8M X 16 SDRAM prx usa Mitsubishi ECL Memory

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory P30-65nm JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx,


    Original     		PDF 512Mb, P30-65nm P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx,

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


    Original     		PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,


    Original     		PDF 512Mb, P33-65nm P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA,

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,


    Original     		PDF 512Mb, P33-65nm P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA,

    kbe00f003m

    Abstract: SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130
    Text: KBE00G003M-D411 MCP MEMORY NNDD512512256256BBFF NAND 512Mb*2 + Mobile SDRAM 256Mb*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00G003M-D411 NNDD512512256256BBFF 512Mb 256Mb 107-Ball 80x13 kbe00f003m SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130

    mecm

    Abstract: assembly instruction 9006 EPOC32 UCB1100 UCB1200 SA1100 SA-1100 StrongARM* SA-1100 Portable Communication Microcontroller 28-July-1995 partition look-aside table
    Text: DIGITAL Semiconductor SA-1100 Microprocessor Data Sheet EC–R8XUA–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts http://www.digital.com/semiconductor This is a new document. Important Notice As of May 17, 1998, Digital Equipment Corporation’s StrongARM, PCI Bridge, and Networking


    Original     		PDF SA-1100 mecm assembly instruction 9006 EPOC32 UCB1100 UCB1200 SA1100 StrongARM* SA-1100 Portable Communication Microcontroller 28-July-1995 partition look-aside table

    Untitled

    Abstract: No abstract text available
    Text: Introduction 1.0 Introduction The DIGITAL Semiconductor SA-1100 Microprocessor SA-1100 is a general-purpose, 32-bit RISC microprocessor with a 16KB instruction cache, an 8KB write-back data cache, a minicache, a write buffer, a read buffer, and a memory-management unit (MMU) combined in a single chip. The SA-1100 is software compatible with the ARM V4


    OCR Scan     		PDF SA-1100 SA-1100) 32-bit SA-110 SA-110) 12-byte