MECM Search Results

Contextual Info: WD01 thru WD10 Surface Mount Glass Passivated Bridge Rectifiers Features: *Repetitive Peak Reverse Voltage : VPRRM=200-1000 Volts *Arerge Output rectified Current : Io=0.5A TA=30 C *Dualin Line Type *Glass Passivated Cavity-free Junction *Plastic Package

DSAGER00036

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Contextual Info: MECXKaUPConv X-band to Ka-band UP-Converter Main Features • RF Output Frequency: 30 -31 GHz • LO Input Frequency: 22 GHz • IF Input Frequency: 8 -9 GHz • More than 11 dB Conversion Gain • 29 dBm OTOI • 30 dBc LO Isolation Product Description • Bias: Vd = 2.8 V, Idq = 320 mA,

Contextual Info: MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.6 – 10.4 GHz full performances Frequency Range  13W Output Power @ Pin 24 dBm  40% PAE @ Pin 24 dBm  24 dB Linear Gain  Bias: Vd = 25V, Id = 480 mA,

Contextual Info: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm

tda 11135

Abstract: TDA 11115 VCXO 2048khz crystal MICROPROCESSOR 68000 intel 80c188 intel 81 imo tdms timer tda 11135 voltage data 68020-16 80C188
Contextual Info: 7 7 S G S -T H O M S O N @ 03 iHi glT[ïM 0(g@ STLC 5464 M U LTI-H D LC W ITH n x 64 SW ITC H IN G M ATRIX ASSO CIATED A D VA N C E DATA • 32 Tx HD LC s W ITH BR O A D C A S T IN G C A P A ­ BILITY A N D /O R C S M A /C R FU N C TIO N W ITH A U T O M A T IC R ES TA R T IN C AS E O F Tx

0B11-R

Abstract: 21PAD
Contextual Info: ADVANCE‡ 21PAD HOST CONTROLLER 21 PAD Host Controller MT8LLN21PADF For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. FEATURE OVERVIEW • Supports up to two Intel Pentium III® [80533/ 80530 family] at 133 MHz front side bus frequency

Contextual Info: MECWideX X-Ku-Band 0.5 Watt Wideband Power Amplifier Main Features • 0.25µm GaAs pHEMT Technology • 8.0 – 14.0 GHz full performance Frequency Range  Small Signal Gain > 18 dB  Input Return Loss > 10 dB  P1dB > 27 dBm  Psat > 29 dBm  PAE > 35 %

MC34114DW

Abstract: mc34114
Contextual Info: TEilECftOHHAfl PASrOBOPHM CXEMAC MHTEPlftEflCOM HOMEPOHABMPATEM M C 3 4 1 1 4 D W / P r BWnOJlHflEMblE OYHKUMM- - -• 06pa6oTKa k yciwiem ie CHntanoa npHOMa m n e p e A a n »

Block diagram on monochrome tv receiver

Abstract: lcd tv service manual circuits 278088 A4771 AMV J11 re21* encoder 1M preset, horizontal Real Time Clock bfw 10 transistor 0hc00 8031 crown MICROCONTROLLER
Contextual Info: Intel StrongARM® SA-1100 Microprocessor Developer’s Manual April 1999 Order Number: 278088-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability

Contextual Info: WD01 thru WD10 Surface Mount Glass Passivated Bridge Rectifiers BRIDGE RECTIFIERS 0.5 AMPERES 200-1000 VOLTS Features: *Repetitive Peak Reverse Voltage : VPRRM=200-1000 Volts *Arerge Output rectified Current : Io=0.5A TA=30 C *Dualin Line Type *Glass Passivated Cavity-free Junction

mecm

Abstract: assembly instruction 9006 EPOC32 UCB1100 UCB1200 SA1100 SA-1100 StrongARM* SA-1100 Portable Communication Microcontroller 28-July-1995 partition look-aside table
Contextual Info: DIGITAL Semiconductor SA-1100 Microprocessor Data Sheet EC–R8XUA–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts http://www.digital.com/semiconductor This is a new document. Important Notice As of May 17, 1998, Digital Equipment Corporation’s StrongARM, PCI Bridge, and Networking

Contextual Info: MEC25XDRA X-Band 0.5 Watt Power Amplifier Main Features • 0.25µm GaAs pHEMT Technology • 8.9– 11.0 GHz full performance Frequency Range  Small Signal Gain > 21 dB  Input Output RL > 12 dB  P1dB > 27 dBm  Bias: Vd = 6V, Id = 190mA, Vg = -0.5 V Typ.

50Hz to 60Hz circuit diagram

Abstract: WD06 WD08 wd10 marking B1s B10S WD01 WD02 WD04
Contextual Info: WD01 thru WD10 Surface Mount Glass Passivated Bridge Rectifiers BRIDGE RECTIFIERS 0.5 AMPERES 100-1000 VOLTS Features: *Repetitive Peak Reverse Voltage : VPRRM=100-1000 Volts *Arerge Output rectified Current : Io=0.5A TA=30 C *Dualin Line Type *Glass Passivated Cavity-free Junction

Contextual Info: WD01 thru WD10 Surface Mount Glass Passivated Bridge Rectifiers BRIDGE RECTIFIERS 0.8 AMPERES 100-1000 VOLTS Features: *Rating to 1000V PRV *Ideal for printed circuit board *Reliable low cost construction utilizing molded plastic technique results in inexpensive product

RA3A

Abstract: DSAGER00035
Contextual Info: BOsaetcraM na sax. ojieayrafax kjmmstìrsckhx faKTopos; •- TBMnepaTypH Bosayxa am jçpyror 9 ra3a icposta arpaccHBHoro .Of 228 K äo 358 K; - 0TH00HTeaiH 0ä EJiasHooia B03flyxa ro 98% npa rewieparype 313 K. 3 . OCHOBHHE TSXIOTECKHE üAHHHE 3 .1« 3 jisktph ’J8 ckh 6 napam eipH

278088

Abstract: TIC 1160 F9N12 intel 27808 SA-1100 ordering 28-July-1995 tag 9114 A4795 strongArm ia181
Contextual Info: StrongARM SA-1100 Microprocessor Technical Reference Manual December 1998 Notice: This document contains preliminary information on new products in production. The specifications are subject to change without notice. Verify with your local Intel sales office that you have the

opr 1139-3

Abstract: ia181 LED display 12 lines, 40 characters each, 10x8 SA1100 StrongARM* SA-1100 Portable Communication Microcontroller 28-July-1995 resistor de 27k ohm ppc jtag 115114 scr
Contextual Info: digital - StrongARM SA-1100 Portable Communications Microcontroller DATA SHEET V2.2 Copy Number _ digital Digital Equipment Corporation - Company Confidental 11/6/97 11/6/97 Digital Equipment Corporation SA-1100 Data Sheet V2.2 StrongARM SA-1100 The SA-1100 is the second member of the StrongARM family. It is a highly integrated communications

Contextual Info: MECGaNC30 4 to 6 GHz GaN HEMT Power Amplifier Main Features 0.25µm GaN HEMT Technology 4.1 – 5.9 GHz full performances Frequency Range 30W Output Power @ Pin 27.5 dBm 37% PAE @ Pin 27.5 dBm 30% PAE @ Pout 20 Watt 27 dB Small Signal Gain Bias: Vd = 28V, Id = 1A, Vg = -3V Typ.

Contextual Info: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm

Contextual Info: MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.5 – 10.2 GHz full performances Frequency Range  27W Output Power @ Pin 27 dBm  36% PAE @ Pin 27 dBm  24 dB Small Signal Gain  Bias: Vd = 30V, Id = 1A, Vg = -2.85V

Contextual Info: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency

Contextual Info: MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25µm GaAs pHEMT Technology 8.5 – 10.8 GHz full performances Frequency Range Saturated Output Power > 11W PAE = 32% - 43% Small Signal Gain > 21 dB VG VD Bias: Vd = 8.5V, Id = 2.6A, Vg = -0.43V Typ.

LTYN

Abstract: UJT pin identification led 7 doan ST5421CFN DIP20 PLCC28 ST5421 ST5421CP ST5451 proximity switch block diagram
Contextual Info: f = 7 S C S -IH O M S O N ST5421 R jO D l^ 0 [i[L [i© T F ^ M D © i SID-GCI : S/T INTERFACE DEVICE WITH GCI PRELIMINARY DATA • SINGLE CHIP 4 WIRES 192kb/s TRANS­ CEIVER FULLY COMPLYING WITH CCITT ¡.430 ■ ISDN BASIC ACCESS HANDLING 144kb/s 2B + D TRANSMISSION