Untitled
Abstract: No abstract text available
Text: WD01 thru WD10 Surface Mount Glass Passivated Bridge Rectifiers Features: *Repetitive Peak Reverse Voltage : VPRRM=200-1000 Volts *Arerge Output rectified Current : Io=0.5A TA=30 C *Dualin Line Type *Glass Passivated Cavity-free Junction *Plastic Package
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DSAGER00036
Abstract: No abstract text available
Text: J M fif#YQ 2SS3 *5 III iìf I •«E p?ì C V fte - I* 5 . càrfano S' c cefi « ? ìm± ' Ì ÌÌ ïlffc* Usi s o. - t) . o»¿ iu i) t»ft) ìa k •£ $ * ! $ ^ l | e 9 lg Ir èlì I! a* n' * *s I £5 5? *5». $ I* $ Cto •c Has/tú vedere SbrSoàoS
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Q1920
gjcodff02
DSAGER00036
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Untitled
Abstract: No abstract text available
Text: MECXKaUPConv X-band to Ka-band UP-Converter Main Features • RF Output Frequency: 30 -31 GHz • LO Input Frequency: 22 GHz • IF Input Frequency: 8 -9 GHz • More than 11 dB Conversion Gain • 29 dBm OTOI • 30 dBc LO Isolation Product Description • Bias: Vd = 2.8 V, Idq = 320 mA,
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Untitled
Abstract: No abstract text available
Text: MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.6 – 10.4 GHz full performances Frequency Range 13W Output Power @ Pin 24 dBm 40% PAE @ Pin 24 dBm 24 dB Linear Gain Bias: Vd = 25V, Id = 480 mA,
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MECGaNX13
MECGaNX13
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Untitled
Abstract: No abstract text available
Text: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm
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tda 11135
Abstract: TDA 11115 VCXO 2048khz crystal MICROPROCESSOR 68000 intel 80c188 intel 81 imo tdms timer tda 11135 voltage data 68020-16 80C188
Text: 7 7 S G S -T H O M S O N @ 03 iHi glT[ïM 0(g@ STLC 5464 M U LTI-H D LC W ITH n x 64 SW ITC H IN G M ATRIX ASSO CIATED A D VA N C E DATA • 32 Tx HD LC s W ITH BR O A D C A S T IN G C A P A BILITY A N D /O R C S M A /C R FU N C TIO N W ITH A U T O M A T IC R ES TA R T IN C AS E O F Tx
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STLC5464
256x256
tda 11135
TDA 11115
VCXO 2048khz crystal
MICROPROCESSOR 68000
intel 80c188
intel 81
imo tdms timer
tda 11135 voltage data
68020-16
80C188
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0B11-R
Abstract: 21PAD
Text: ADVANCE‡ 21PAD HOST CONTROLLER 21 PAD Host Controller MT8LLN21PADF For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. FEATURE OVERVIEW • Supports up to two Intel Pentium III® [80533/ 80530 family] at 133 MHz front side bus frequency
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21PAD
PC1600/PC2100
64-bit,
MT8LLN21PADF
PC2100
PC1600
72-bit
MT8LLN21PADF
0B11-R
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Untitled
Abstract: No abstract text available
Text: MECWideX X-Ku-Band 0.5 Watt Wideband Power Amplifier Main Features • 0.25µm GaAs pHEMT Technology • 8.0 – 14.0 GHz full performance Frequency Range Small Signal Gain > 18 dB Input Return Loss > 10 dB P1dB > 27 dBm Psat > 29 dBm PAE > 35 %
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190mA,
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MC34114DW
Abstract: mc34114
Text: TEilECftOHHAfl PASrOBOPHM CXEMAC MHTEPlftEflCOM HOMEPOHABMPATEM M C 3 4 1 1 4 D W / P r BWnOJlHflEMblE OYHKUMM- - -• 06pa6oTKa k yciwiem ie CHntanoa npHOMa m n e p e A a n »
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06pa6oTKa
mc34114dw.
MC34114DW/P
MC34114DW
mc34114
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Block diagram on monochrome tv receiver
Abstract: lcd tv service manual circuits 278088 A4771 AMV J11 re21* encoder 1M preset, horizontal Real Time Clock bfw 10 transistor 0hc00 8031 crown MICROCONTROLLER
Text: Intel StrongARM® SA-1100 Microprocessor Developer’s Manual April 1999 Order Number: 278088-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability
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SA-1100
32-kHz
6864-MHz
oscillator/16
96-MHz
PLL/16
SA-1100
Block diagram on monochrome tv receiver
lcd tv service manual circuits
278088
A4771
AMV J11
re21* encoder
1M preset, horizontal Real Time Clock
bfw 10 transistor
0hc00
8031 crown MICROCONTROLLER
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Untitled
Abstract: No abstract text available
Text: WD01 thru WD10 Surface Mount Glass Passivated Bridge Rectifiers BRIDGE RECTIFIERS 0.5 AMPERES 200-1000 VOLTS Features: *Repetitive Peak Reverse Voltage : VPRRM=200-1000 Volts *Arerge Output rectified Current : Io=0.5A TA=30 C *Dualin Line Type *Glass Passivated Cavity-free Junction
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907X7
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mecm
Abstract: assembly instruction 9006 EPOC32 UCB1100 UCB1200 SA1100 SA-1100 StrongARM* SA-1100 Portable Communication Microcontroller 28-July-1995 partition look-aside table
Text: DIGITAL Semiconductor SA-1100 Microprocessor Data Sheet EC–R8XUA–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts http://www.digital.com/semiconductor This is a new document. Important Notice As of May 17, 1998, Digital Equipment Corporation’s StrongARM, PCI Bridge, and Networking
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SA-1100
mecm
assembly instruction 9006
EPOC32
UCB1100
UCB1200
SA1100
StrongARM* SA-1100 Portable Communication Microcontroller
28-July-1995
partition look-aside table
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Untitled
Abstract: No abstract text available
Text: MEC25XDRA X-Band 0.5 Watt Power Amplifier Main Features • 0.25µm GaAs pHEMT Technology • 8.9– 11.0 GHz full performance Frequency Range Small Signal Gain > 21 dB Input Output RL > 12 dB P1dB > 27 dBm Bias: Vd = 6V, Id = 190mA, Vg = -0.5 V Typ.
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MEC25XDRA
190mA,
MEC25XDRA
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50Hz to 60Hz circuit diagram
Abstract: WD06 WD08 wd10 marking B1s B10S WD01 WD02 WD04
Text: WD01 thru WD10 Surface Mount Glass Passivated Bridge Rectifiers BRIDGE RECTIFIERS 0.5 AMPERES 100-1000 VOLTS Features: *Repetitive Peak Reverse Voltage : VPRRM=100-1000 Volts *Arerge Output rectified Current : Io=0.5A TA=30 C *Dualin Line Type *Glass Passivated Cavity-free Junction
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21-Apr-06
50Hz to 60Hz circuit diagram
WD06
WD08
wd10
marking B1s
B10S
WD01
WD02
WD04
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Untitled
Abstract: No abstract text available
Text: WD01 thru WD10 Surface Mount Glass Passivated Bridge Rectifiers BRIDGE RECTIFIERS 0.8 AMPERES 100-1000 VOLTS Features: *Rating to 1000V PRV *Ideal for printed circuit board *Reliable low cost construction utilizing molded plastic technique results in inexpensive product
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300us
18-Oct-2010
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RA3A
Abstract: DSAGER00035
Text: BOsaetcraM na sax. ojieayrafax kjmmstìrsckhx faKTopos; •- TBMnepaTypH Bosayxa am jçpyror 9 ra3a icposta arpaccHBHoro .Of 228 K äo 358 K; - 0TH00HTeaiH 0ä EJiasHooia B03flyxa ro 98% npa rewieparype 313 K. 3 . OCHOBHHE TSXIOTECKHE üAHHHE 3 .1« 3 jisktph ’J8 ckh 6 napam eipH
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0TH00HTeaiH
B03flyxa
KS3350A
KEI350E
KII350B!
BHD18
B30E8TI>
RA3A
DSAGER00035
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278088
Abstract: TIC 1160 F9N12 intel 27808 SA-1100 ordering 28-July-1995 tag 9114 A4795 strongArm ia181
Text: StrongARM SA-1100 Microprocessor Technical Reference Manual December 1998 Notice: This document contains preliminary information on new products in production. The specifications are subject to change without notice. Verify with your local Intel sales office that you have the
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SA-1100
278088
TIC 1160
F9N12
intel 27808
SA-1100 ordering
28-July-1995
tag 9114
A4795
strongArm
ia181
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opr 1139-3
Abstract: ia181 LED display 12 lines, 40 characters each, 10x8 SA1100 StrongARM* SA-1100 Portable Communication Microcontroller 28-July-1995 resistor de 27k ohm ppc jtag 115114 scr
Text: digital - StrongARM SA-1100 Portable Communications Microcontroller DATA SHEET V2.2 Copy Number _ digital Digital Equipment Corporation - Company Confidental 11/6/97 11/6/97 Digital Equipment Corporation SA-1100 Data Sheet V2.2 StrongARM SA-1100 The SA-1100 is the second member of the StrongARM family. It is a highly integrated communications
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SA-1100
SA-1100
32-bit
SA-110,
opr 1139-3
ia181
LED display 12 lines, 40 characters each, 10x8
SA1100
StrongARM* SA-1100 Portable Communication Microcontroller
28-July-1995
resistor de 27k ohm
ppc jtag
115114 scr
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Untitled
Abstract: No abstract text available
Text: MECGaNC30 4 to 6 GHz GaN HEMT Power Amplifier Main Features 0.25µm GaN HEMT Technology 4.1 – 5.9 GHz full performances Frequency Range 30W Output Power @ Pin 27.5 dBm 37% PAE @ Pin 27.5 dBm 30% PAE @ Pout 20 Watt 27 dB Small Signal Gain Bias: Vd = 28V, Id = 1A, Vg = -3V Typ.
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MECGaNC30
MECGaNC30
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Untitled
Abstract: No abstract text available
Text: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm
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Untitled
Abstract: No abstract text available
Text: MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.5 – 10.2 GHz full performances Frequency Range 27W Output Power @ Pin 27 dBm 36% PAE @ Pin 27 dBm 24 dB Small Signal Gain Bias: Vd = 30V, Id = 1A, Vg = -2.85V
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MECGaNX27
MECGaNX27
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Untitled
Abstract: No abstract text available
Text: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency
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Untitled
Abstract: No abstract text available
Text: MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25µm GaAs pHEMT Technology 8.5 – 10.8 GHz full performances Frequency Range Saturated Output Power > 11W PAE = 32% - 43% Small Signal Gain > 21 dB VG VD Bias: Vd = 8.5V, Id = 2.6A, Vg = -0.43V Typ.
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MECX10W-2
MECX10W-2
22dBm
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LTYN
Abstract: UJT pin identification led 7 doan ST5421CFN DIP20 PLCC28 ST5421 ST5421CP ST5451 proximity switch block diagram
Text: f = 7 S C S -IH O M S O N ST5421 R jO D l^ 0 [i[L [i© T F ^ M D © i SID-GCI : S/T INTERFACE DEVICE WITH GCI PRELIMINARY DATA • SINGLE CHIP 4 WIRES 192kb/s TRANS CEIVER FULLY COMPLYING WITH CCITT ¡.430 ■ ISDN BASIC ACCESS HANDLING 144kb/s 2B + D TRANSMISSION
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ST5421
192kb/s
144kb/s
ST5451
ST5421
200kHz
LTYN
UJT pin identification
led 7 doan
ST5421CFN
DIP20
PLCC28
ST5421CP
proximity switch block diagram
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