sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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LM1011N
Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44
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PDF
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
LM1011N
JRC386D
X0238CE
UA78GKC
M51725L
MJ13005
AN6677
HA11749
MN8303
sn76131n
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jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
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Original
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PDF
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
SN76131N
LM1011N
ne545b
HA1457W
X0238CE
upc1018c
UA78GKC
MJ13005
MN8303
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jrc386d
Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
Text: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42
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Original
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
LM3171
LM1011N
MJ13005
UA78GKC
upc1018c
x0137ce
PLL02A
MN8303
HA1457w
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A5 GNC
Abstract: TSOP32-P-4QO-K 51V17400 5116100
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64m
A5 GNC
TSOP32-P-4QO-K
51V17400
5116100
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m51171
Abstract: No abstract text available
Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.
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OCR Scan
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PDF
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MSM51V17180
576-Word
18-Bit
MSM51V17180
cycles/32ms
m51171
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
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MSM5116180-70
Abstract: MSM5116180-80
Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5116180_
576-Word
18-Bit
MSM5116180
cycles/64ms
MSM5116180-70
MSM5116180-80
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Bv 42 transistor
Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64ms
Bv 42 transistor
M5116
tsop50
42-PIN
50-PIN
MSM51V16190-70
MSM51V16190-80
TSQP28-P-400-K
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32-PIN
Abstract: A10E MSM51V16900-70 MSM51V16900-80
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V16900_
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
A10E
MSM51V16900-70
MSM51V16900-80
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
Bv 42 transistor
tsop50
42-PIN
MSM5116190-70
MSM5116190-80
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MSM5117180-70
Abstract: MSM5117180-80
Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the M5117180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
MSM5117180-70
MSM5117180-80
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081m
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17900_ 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V17900
152-Word
MSM51V17900
MSM51VI7900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
081m
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e33a
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V17190
576-Word
18-Bit
MSM51V17190
2048cycles/32m
e33a
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2454D
Abstract: 2DQ11 2M54G
Text: O K I Semiconductor M5117180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the M5117180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
2454D
2DQ11
2M54G
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20 TI 54240
Abstract: MSM51VI6180
Text: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V16180
576-Word
18-Bit
MSM51V16180
MSM51VI6180
cycles/64ms
20 TI 54240
|
MSM51V17180-70
Abstract: MSM51V17180-80
Text: O K I Semiconductor MSM51V17180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V17180
576-Word
18-Bit
MSM51V17180
MSM51VI7180
2048cycles/32ms
MSM51V17180-70
MSM51V17180-80
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32-PIN
Abstract: MSM5116900-70 MSM5116900-80 B724e
Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5116900
152-Word
MSM5116900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
MSM5116900-70
MSM5116900-80
B724e
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Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5116900
152-Word
MSM5116900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
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m51171
Abstract: m32AG M5116
Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5116180
576-Word
18-Bit
MSM5116180
cycles/64ms
m51171
m32AG
M5116
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V16900
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
|
uras 4
Abstract: uras 2 5116100
Text: OKI Semiconductor M5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The M5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the M5117190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM5117190
576-Word
18-Bit
MSM5117190
cycles/32m
uras 4
uras 2
5116100
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42-PIN
Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
Text: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V16180
576-Word
18-Bit
MSM51V16180
MSM51VI6180
cycles/64ms
42-PIN
MSM51V16180-70
MSM51V16180-80
V16180
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Bv 42 transistor
Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
Text: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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PDF
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MSM51V17190_
576-Word
18-Bit
MSM51V17190
cycles/32ms
Bv 42 transistor
CI 576
tsop50
42-PIN
MSM51V17190-70
MSM51V17190-80
oki Package SOJ
Scans-0053100
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