7400A
Abstract: MSM51V17400A
Text: O K I Semiconductor M SM 51V17400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V17400A is
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OCR Scan
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MSM51
7400A_
304-Word
MSM51V17400A
M5M51V17400A
26/24-pin
7400A
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A109D
Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
Text: 51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The 51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V17400B
51V17400B
0260X68040)
157BSC
1AD48-00-MAY95
HY51V17400BJ
HY51V17400BSD
A109D
max3843
lcd hyundai
WWD 3P
hyundai hy 555
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PDF
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Untitled
Abstract: No abstract text available
Text: 51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The 51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V17400B
51V17400B
HY51V17400Bto
1AD48-00-MAY95
HY51V17400BJ
HY51V17400BSU
HY51V17400BT
HY51V17400SLT
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PDF
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MSM51V17400A
Abstract: No abstract text available
Text: O K I Semiconductor M SM 51V17400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V17400A is
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OCR Scan
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MSM51V17400A
304-Word
MSM51V17400A
26/24-pin
cycles/32
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PDF
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A5 GNC
Abstract: TSOP32-P-4QO-K 51V17400 5116100
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64m
A5 GNC
TSOP32-P-4QO-K
51V17400
5116100
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )
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51V16160A
51V18160A
116160A
118160A
256Kx4
514260B/BSL
514256C/CL
51V6800A
51V16100A
51V17100A
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PDF
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e33a
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17190
576-Word
18-Bit
MSM51V17190
2048cycles/32m
e33a
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117190
576-Word
18-Bit
MSM5117190
cycles/32ms
Bv 42 transistor
tsop50
42-PIN
MSM5117190-70
MSM5117190-80
SOJ42-P-400
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor 51V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V17400 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17400
304-Word
MSM51V17400
2048cycles/32ms
A0-A10
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MSM51V17400DSL
Abstract: A312H
Text: E2G0123-17-61 O K I Semiconductor M 51V17400D/DSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI7400D /D SL is a 4,194,304-w ord x 4-bit dynam ic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V17400D/DSL achieves high integration, high-speed operation,
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E2G0123-17-61
MSM51V17400D/DSL
304-Word
MSM51VI7400D
MSM51V17400D/DSL
a26/24-pin
26/24-pin
MSM51V17400DSL
MSM51V17400DSL
A312H
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PDF
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MSM51V17400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 V17 4 0 0 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the M SM 51VI7400 is OKI's CM OS silicon gate process technology.
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OCR Scan
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MSM51V17400
304-Word
MSM51V17400
MSM51VI7400
2048cycles/32ms
b72M24D
A0-A10
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PDF
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M51V17400-60
Abstract: M51V17400 M51V17 MSM51V17400 be4s A10E M51V m51v174 HAT141
Text: O K I Semiconductor MSM5 1 V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V17400 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17400
304-Word
MSM51V17400
cycles/32ms
A0-A10
L724240
M51V17400-60
M51V17400
M51V17
be4s
A10E
M51V
m51v174
HAT141
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PDF
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intel 82c51
Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160
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51V16100
51V16160
51V16400
51V17100
51V17400
51V18160
TC5116160A
TC5116800A
TC5117800A
uPD4216100
intel 82c51
Mitsubishi 82c54
intel p8085a
PD8155H
nec 8212c
82C55
harris 82c55
82C59 toshiba
m5l8288
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PDF
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uras 4
Abstract: uras 2 5116100
Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117190
576-Word
18-Bit
MSM5117190
cycles/32m
uras 4
uras 2
5116100
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor 51V17400 4,194,304-Word x 4-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The 51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V17400 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17400
304-Word
MSM51V17400
cycles/32ms
b724240
G017425
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PDF
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Bv 42 transistor
Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
Text: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V17190_
576-Word
18-Bit
MSM51V17190
cycles/32ms
Bv 42 transistor
CI 576
tsop50
42-PIN
MSM51V17190-70
MSM51V17190-80
oki Package SOJ
Scans-0053100
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PDF
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DU9 308
Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117900
152-Word
MSM5117900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
DU9 308
32-PIN
MSM5117900-70
MSM5117900-80
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PDF
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51V17400
Abstract: No abstract text available
Text: O K I Semiconductor 51V17400 4 Meg x 4-Blt DYNAMIC RAM DESCRIPTION The MSM51V7400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the MSM51V7400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL
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OCR Scan
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MSM51V17400
MSM51V7400
16-Meg
1-800-0KI-6388
51V17400
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PDF
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