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    51V16400 Search Results

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    51V16400 Price and Stock

    ROHM Semiconductor MSM51V16400F-60T3KR1

    DRAM Chip FPM 16MBit 4Mx4 33V 24Pin TSOP (Alt: MSM51V16400F-60T3KR1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica MSM51V16400F-60T3KR1 13 Weeks 1,000
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    51V16400 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti­ lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­


    OCR Scan     		TC51V16400BST-60/70 51V16400B TC51V16400BST 300mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 51V16400A_ 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The 51V16400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V16400A is


    OCR Scan     		51V16400A_ 304-Word MSM51V16400A 304-word 26/24-pin cycles/64 PDF

    71RA50

    Abstract: CSR BC4 a10ra11r
    Text: TOSHIBA THM72V4030BTG60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTHM 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC 51V16400BS T on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large


    OCR Scan     		THM72V4030BTG60/70 72V4030BTG 51V16400BS THMxxxxxx-60) THMxxxxxx-70) THM72V4030BTG-6OÏ DM32061195 DM32061195 THM72V4030BTG THM72V4030BTG-60/70 71RA50 CSR BC4 a10ra11r PDF

    A312H

    Abstract: A9R-A11R MSM51V16400D MSM51V16400DSL 010L
    Text: E2G0122-17-61 O K I Semiconductor This version: Mar. 1998 M SM 51 VI 6400D /D SL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM 51V16400D/DSL achieves high integration, high-speed operation,


    OCR Scan     		E2G0122-17-61 MSM51V16400D/DSL 304-Word TheMSM51 V16400D/DSL MSM51V16400D/DSL MSM51V16400D a26/24-pin 26/24-pin A312H A9R-A11R MSM51V16400DSL 010L PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )


    OCR Scan     		51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A PDF

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


    OCR Scan     		51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 I V I 6400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The 51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V16400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		304-Word MSM51V16400 cycles/64ms MSM51V16400 2424D PDF

    OE306G

    Abstract: BF900 62x42b 62X42 KGF2701 S/KGF2701
    Text: P art Ni mber Index K M S C 1 1 4 6 B . 3? K G F 1 145 . . 7 7 K G F 1 146 . M S C 1 1 4 9 . 7 K G F1155B . M S C 2 3 8 3 7 A . . 44 M S M 5 1 4 2 2 3 B . . 37 M S M 5 3 1 6 3 2 C .


    OCR Scan     		F1155B F1156 KGF1191 F1254B F1256B 514260B OE306G BF900 62x42b 62X42 KGF2701 S/KGF2701 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V16400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM51V16400 304-Word MSM51V16400 cycles/64m BME40 PDF

    MSM51V16400A

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16400 A_ 4,194,304-Word x 4-Bit DYNAMIC R AM : FA ST P A G E M O D E T Y P E DESCRIPTION The 51V16400A is a 4494,304-w ord x 4-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The 51V16400A achieves high integration, high-speed operation, a n d lowpo w er consum ption d u e to q u ad ru p le polysilicon double m etal CMOS. The 51V16400A is


    OCR Scan     		MSM51V16400A_ 304-Word MSM51V16400A 26/24-pin 4096cycles/64ms PDF

    MSM51V16400

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16400 is a n e w generation dynam ic organized as 4,194,304-w o rd x 4-bit. The technology used to fabricate the 51V16400 is O K I's C M O S silicon gate process technology.


    OCR Scan     		MSM51V16400 304-Word MSM51V16400 cycles/64ms 2424D b724240 PDF

    MSM51V16400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16400 4,194,304-W ord x 4-B it DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16400 is a new generation dynam ic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V16400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM51VI6400 304-Word MSM51V16400 cycles/64ms MSM51V16400 72424D PDF

    DU9 308

    Abstract: 32-PIN MSM5117900-70 MSM5117900-80
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM5117900 152-Word MSM5117900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN DU9 308 32-PIN MSM5117900-70 MSM5117900-80 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V16400 4 Meg x 4-Bit DYNAMIC RAM DESCRIPTION The 51V16400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the 51V16400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL


    OCR Scan     		MSM51V16400 MSM51V16400 16-Meg 400mil O-OKI-6388 PDF