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    5116100 Price and Stock

    Carling Technologies LT-1511-610-012

    SWITCH TOGGLE SPST 15A 125V
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    DigiKey LT-1511-610-012 Box 2,179 1
    • 1 $17.82
    • 10 $15.378
    • 100 $13.4888
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    Mouser Electronics LT-1511-610-012 204
    • 1 $15.77
    • 10 $12.53
    • 100 $10.6
    • 1000 $10.28
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    Newark LT-1511-610-012 Bulk 9 1
    • 1 $16.37
    • 10 $13.92
    • 100 $13.92
    • 1000 $13.92
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    Bristol Electronics LT-1511-610-012 25
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    LT-1511-610-012 10 1
    • 1 $21.6
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    Master Electronics LT-1511-610-012 2,980
    • 1 -
    • 10 $10.92
    • 100 $9.37
    • 1000 $8.84
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    Sager LT-1511-610-012 1
    • 1 $17.35
    • 10 $17.35
    • 100 $14.84
    • 1000 $7.69
    • 10000 $7.69
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    AirBorn Inc MM-212-051-161-00WC

    CABLE ASSY D-MIC-D 51P 457.2MM
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    DigiKey MM-212-051-161-00WC Bulk 5 1
    • 1 $478.88
    • 10 $407.139
    • 100 $407.139
    • 1000 $407.139
    • 10000 $407.139
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    AirBorn Inc MM-313-051-161-00WD

    CABLE ASSY D-MIC-D 51P 914.4MM
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    DigiKey MM-313-051-161-00WD Bulk 4 1
    • 1 $527.77
    • 10 $449.012
    • 100 $449.012
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    AirBorn Inc MM-312-051-161-00WD

    CABLE ASSY D-MIC-D 51P 914.4MM
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    DigiKey MM-312-051-161-00WD Bulk 4 1
    • 1 $519.07
    • 10 $441.313
    • 100 $441.313
    • 1000 $441.313
    • 10000 $441.313
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    Weidmüller Interface GmbH & Co. KG 9511610000

    TERM BLK 4POS SIDE ENT 7.5MM PCB
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    DigiKey 9511610000 Bulk 100
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    • 100 $1.4903
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    Avnet Americas 9511610000 Bag 100
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    • 100 $1.3386
    • 1000 $1.3386
    • 10000 $1.3386
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    Newark 9511610000 Bulk 100
    • 1 -
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    • 100 $2.19
    • 1000 $1.75
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    Avnet Abacus 9511610000 3 Weeks 100
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    5116100 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    5116100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI 5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H 5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA 5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		TC5116100BSJ-60/70 5116100BS 51161OOBSJ 300mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: b l E D • 4 ^ i , 2 0 3 H M 5116100 S e r i e s - 0 0 2 3 3 2 b O i l ■ H I T S HITACHI/ «-o ì i c / arrays / be * 16,777,216-w ord x 1 -b it D yn a m ic R andom A c c e s s M em ory The H itachi H M 5116100 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It


    OCR Scan     		216-w HM5116100J-6 HM5116100J-7 HM5116100J-8 400-mil 24/28-pin CP-24DA) HM5116100Z-6 HM51161002-7 HM5116100Z-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 16 M X 1-Bit Dynamic RAM HYB 5116100AJ-50/-60/-70/-80 HYB 5116100ASJ-50/-60/-70/-80 Advanced Inform ation • 16 777 216 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version


    OCR Scan     		5116100AJ-50/-60/-70/-80 5116100ASJ-50/-60/-70/-80 B235b05 00S53T7 PDF

    Untitled

    Abstract: No abstract text available
    Text: H M 5 1 1 6 1 0 0 L S e r i e s LowPower Version Product Preview 16,777,216-Word x 1-Bit Dynamic Random A c c e s s Memory • DESCRIPTION H M 5116100L J Series The Hitachi HM 5116100 is a C M O S dynamic RAM organized 16,777,216 words x 1-bit. It employs the most advanced C M O S technology lor high performance and


    OCR Scan     		216-Word 5116100L HM5116100L PDF

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


    OCR Scan     		51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288 PDF

    HY5116100B

    Abstract: 1AD41-00-MAY95 HY5116100
    Text: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide


    OCR Scan     		HY5116100B 16Mx1 HY5116100Bis TheHY5116100B 4b750Ã 300435b 1AD41-00-MAY9S HY5116100BJ 1AD41-00-MAY95 HY5116100 PDF

    A9HA

    Abstract: SA11
    Text: O K I Semiconductor MSM5 1 16100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116100 is a new generation dynamic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the M SM 5116100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM5116100_ 216-Word MSM5116100 cycles/64ms b72M2MD MSM5116100 A0-A11 b724240 A9HA SA11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5116100 Series 16,777,216-word x 1-bit Dynamic RAM HITACHI ADE-203-646D Z Rev. 4.0 Jun. 24, 1997 Description The Hitachi HM 5116100 is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The 5116100 offers


    OCR Scan     		HM5116100 216-word ADE-203-646D 26-pin ns/70 mW/385 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-178B Z 5116100A Series 16,777,216-word x 1-bit Dynamic Random Access Memory H IT A C H I Nov2r 99: The Hitachi H M 5116100A is a CMOS dynamic R A M o rg an ized 1 6 ,7 7 7 ,2 1 6 -w o rd x 1-bit. It employs the most advanced CMOS technology for


    OCR Scan     		ADE-203-178B HM5116100A 216-word 116100A 5116100AS-6 5116100AS-7 5116100AS-8 HM5116100ATS-6 5116100ATS-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: H M 5116100 S e r ie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION H M 5U 6100J Series T h e H itachi H M 5 1 16 10 0 is a C M O S dyn am ic R A M org an ized 16,777,216-w ord x 1-bit. It em ploys the m ost a d v a n ce d C M O S technolog y for high perform a n ce and


    OCR Scan     		HM5116100 216-Word 216-w 6100J PDF

    Untitled

    Abstract: No abstract text available
    Text: bJE 1 • MMRbSDB QDS3b74 5 m HB56A169 Series ■HITS HI TA C H I / L O G I C / A R R A Y S / M E M — 1 6 ,7 7 7 ,2 1 6 -W o rd x 9 -B it H igh D e n s ity D y n a m ic R A M M o d u le T he H B 56A 169 is a 16 M x 9 dyn am ic RA M m o d u le , m o u n te d 9 p iec es o f 16-M bit D R A M


    OCR Scan     		QDS3b74 HB56A169 5116100J) 30-pin HB56A169A HB56A169AT Q023bflD B56A169B PDF

    Untitled

    Abstract: No abstract text available
    Text: Um i t 19 5 HM51161OOA Series 16,777,216-word x 1-blt Dynamic Random Access Memory Rev. 1 Jan. 31,1994 HITACHI The Hitachi 5116100A is a CMOS dynamic RAM organized 16,777,216 words x 1 bits. It employs the most advanced CMOS technology for high performance and low power. The


    OCR Scan     		HM51161OOA 216-word HM5116100A HM5116100AS-6 HM5116100AS-7 5116100AS-8 300-mil CP-24DB) 24/26-pin PDF

    A5 GNC

    Abstract: TSOP32-P-4QO-K 51V17400 5116100
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64m A5 GNC TSOP32-P-4QO-K 51V17400 5116100 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )


    OCR Scan     		51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A PDF

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5116100 S e rie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION 5116100J Series The Hitachi 5116100 is a C M O S dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced C M O S technology for high performance and


    OCR Scan     		HM5116100 216-Word HM5116100J ns/70 ns/80 ns/100 mW/440 PDF

    z10-130

    Abstract: HM5116100 Hitachi Scans-001
    Text: 243 - 16M m £ ífc & WiEicBj rc TRAC CMOS D y n a m i c X i y ¿i- y y # ns) TRCY min (ns) TCAD min (ns) TAH rain (ns) TP rain (ns) RAM ( 1 6, m tt T*CY min (ns) TDH rain (ns) TRWC V D D or VC C (ns) (V) 7 7 7, m I DD max (mA) 216x1 ) A I DD STANDBY I SB/ I S82)


    OCR Scan     		216x1) 28P1N M5116100J/Z/TT/RR-10 4K/64 1W5116100J/Z/TT/RR-6 IM5116100J/Z/TT/RR-3 4K/25S UPM217100-70 2K/32 UPD4217100-80 z10-130 HM5116100 Hitachi Scans-001 PDF

    e33a

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM51V17190 576-Word 18-Bit MSM51V17190 2048cycles/32m e33a PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ LOGIC/ARRAYS/ME 11 S1E D . I B 5116100L SGNGS MMTLic?[]3 DD1B677 743 • H I T S Product Preview Low Power Version 16,777,216-Word x 1-Blt Dynamic Random Access Memory ■ DESCRIPTION 5116100U Series The Hitachi 5116100 is a CMOS dynamic RAM organized 16,777,216 words x


    OCR Scan     		HM5116100L DD1B677 216-Word HM5116100U HM5116100 ns/70 ns/80 ns/100 mW/440 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-371 Z 5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 23, 1994 HITACHI The Hitachi 5116100B is a CMOS dynamic RAM organized 16,777,216-w ord x 1-bit. It employs the most advanced CMOS technology for


    OCR Scan     		ADE-203-371 216-word HM5116100B 216-w HM5116100BS-6 HM5116100BS-7 HM5116100BS-8 HM5116100BTS-7 PDF

    flash 32 Pin PLCC 16mbit

    Abstract: 398x
    Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


    OCR Scan     		PDF

    514400

    Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
    Text: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1


    OCR Scan     		P-SOJ-26/20-11 P-SOJ-26/20-52' P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-28/24-1 5116400J 5117400ASJ 5116400ASJ 5116400AJ 514400 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000 PDF

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
    Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM5117190 576-Word 18-Bit MSM5117190 cycles/32ms Bv 42 transistor tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400 PDF