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    514256 Price and Stock

    EDAC Inc 345-142-560-503

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    EDAC Inc 345-142-560-502

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    Mouser Electronics 345-142-560-502
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    EDAC Inc 895-142-560-212

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    EDAC Inc 345-142-560-808

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    DigiKey 345-142-560-808 Box 25
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    Mouser Electronics 345-142-560-808
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    • 1000 $15.36
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    Newark 345-142-560-808 Bulk 25
    • 1 $24.43
    • 10 $24.43
    • 100 $15.92
    • 1000 $9.59
    • 10000 $9.59
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    EDAC Inc 395-142-560-203

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    DigiKey 395-142-560-203 Box 25
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    Newark 395-142-560-203 Bulk 25
    • 1 $24.09
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    • 100 $15.74
    • 1000 $9.49
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    514256 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    514256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    514256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    514256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    514256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5142-563K API Delevan Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR PWR 56UH HI CURRENT SMD Original PDF
    5142-563K API Delevan Power Inductors - Surface Mount Power Inductor - Surface Mount - 5142 Original PDF
    5142-564K API Delevan Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR PWR 560UH HI CURR SMD Original PDF
    5142-564K API Delevan Power Inductors - Surface Mount Power Inductor - Surface Mount - 5142 Original PDF
    5142-565K API Delevan Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR PWR 5600UH HI CURR SMD Original PDF
    5142-565K API Delevan Power Inductors - Surface Mount Power Inductor - Surface Mount - 5142 Original PDF

    514256 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HYB514256B-50

    Abstract: HYB514256B-60 HYB514256B-70 HYB514256BJ-50 HYB514256BJ-60 HYB514256BJ-70 HYB514256BL-50 514256 514256b-70
    Text: 256 K x 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time


    Original
    514256B/BJ-50/-60/-70 514256BL/BJL-50/-60/-70 HYB514256B-50 HYB514256B-60 HYB514256B-70 HYB514256BJ-50 HYB514256BJ-60 HYB514256BJ-70 HYB514256BL-50 514256 514256b-70 PDF

    MSM51C256A

    Abstract: MSC2321B-70YS18
    Text: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/DS18 is a fully decoded 524,288-w o rd x 36-bit CMOS D ynam ic R andom Access M em ory M odule com posed of sixteen 1-Mb DRAMs in SOJ M SM 514256B packages an d eight


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    MSC2321 8/DS18 288-Word 36-Bit MSC2321B-xxYS18/DS18 MSM514256B) 256-Kb MSM51C256A) MSM51C256A MSC2321B-70YS18 PDF

    514256a

    Abstract: MCM514256AZ10 MCM514256AP70 MCM514256APC80 MCM514256A-10 514256A-70 MCM51L4256A-70 MCM514256A-80 MCM514256AJ80 MCM514256AZ80
    Text: i O rder this docum ent by M CM 514256A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256A MCM51L4256A 256Kx4 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The 514256A is a 1,0|x CMOS high-speed, dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS


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    14256A/D 256Kx4 MCM514256A 300-mil 100-mil A23028-2 14256A 51L4256A 514256a MCM514256AZ10 MCM514256AP70 MCM514256APC80 MCM514256A-10 514256A-70 MCM51L4256A-70 MCM514256A-80 MCM514256AJ80 MCM514256AZ80 PDF

    514256-10

    Abstract: HM514256 hitachi HM514256
    Text: 514256 Series 262144-word x 4-bit CMOS Dynamic RAM T h e H itachi H M 5 1 4 2 5 6 Series is a C M O S d y n a m ic R A M o r ­ ganized 2 6 2 1 4 4 -w o r d x 4-bit. H M 514256P Series H M 5 1 4 2 5 6 has realized higher density, higher perform ance and variou s fu n c tio n s b y e m p lo y in g


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    HM514256 262144-word 514256P 514256-10 hitachi HM514256 PDF

    P5501

    Abstract: No abstract text available
    Text: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 A d v a n c e d In fo rm a tio n 2 62 144 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % su p p ly w ith a bu ilt-in f 'BB


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    514256B/BJ-50/-60/-70 514256BL/BJL-50/-60/-70 P5501 PDF

    Untitled

    Abstract: No abstract text available
    Text: 524,288 W O R D S x 32 BIT D Y N A M IC R A M M O D U L E DESCRIPTIO N T he TH M 325120BS/BSC/AS/ASG is a 524,288 words by 32 b its dynam ic RAM m odule w hich assem bled 16 pcs of T C 514256A J/B J on the p rin te d circu it board. T hese m odules can be as w ell used


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    325120BS/BSC/AS/ASG 14256A B-248 THM325120BS-60, THM325120AS-70, THM325120BSG-60, THM325120ASG-70, B-249 PDF

    m514256a

    Abstract: No abstract text available
    Text: 514256A/AL Series 262,144-Word x 4-Bit CM O S Dynamic RAM • DESCRIPTION 514256A/ALP Series The Hitachi HM 514256A/AL is a C M O S dynamic RAM organized 262,144-word x 4-bit. HM 514256A/AL has realized higher density, higher performance and various functions by employing 1.3 jj.m C M O S technology and some new C M O S circuit de­


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    HM514256A/AL 144-Word HM514256A/ALP 14256A/AL 20-pin m514256a PDF

    BL-70

    Abstract: 514256B-80 514256B-70 514256BZ-70
    Text: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BL/BJUBZL-60/-70 Advanced Information • 262 144 words by 4-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60


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    514256B/BJ/BZ-60/-70/-80 514256BL/BJUBZL-60/-70 514256B/BL-60) 514256B/BL-70) 514256B-80) BL-70 514256B-80 514256B-70 514256BZ-70 PDF

    5117400

    Abstract: sem 2500 7212 tube
    Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1


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    P-SOJ-26/20-1 J-26/20-5? P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-26/24-1 1000BJ 514256BJ 514100BJ 514400BJ 5117400 sem 2500 7212 tube PDF

    514256

    Abstract: 514256BJ-70 Q67100-Q1044 514256b-60
    Text: 256 K x 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time


    Original
    514256B/BJ-50/-60/-70 514256BL/BJL-50/-60/-70 514256 514256BJ-70 Q67100-Q1044 514256b-60 PDF

    514400

    Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
    Text: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1


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    P-SOJ-26/20-11 P-SOJ-26/20-52' P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-28/24-1 5116400J 5117400ASJ 5116400ASJ 5116400AJ 514400 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M S C 2333B -xxY S 16/D S 16 is a fully d eco d ed 524,288-w o rd x 32-b it CM OS D ynam ic R an dom A ccess M em ory M odule com p osed of sixteen 1-Mb D RAM s in SOJ M SM 514256B p ack ages m ounted


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    MSC2333B-xxYS16/DS16 288-Word 32-Bit MSC2333B-xxYS16/DS16 MSM514256B) 72-pin PDF

    m514256

    Abstract: M514256A MCM514256AP70 M514256A-80 MCM514256AP80 MCM514256AJ70 M514 MCM514256AJ70R2 M51425 L42S
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256A MCM51L4256A 256K x 4 Bit CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The M C M 514256A is a 1 .0 ^ CM OS high-speed dynam ic random access memory. It is organized as 262,144 four-bit w ords and fabricated w ith C M OS silicon-gate pro­


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    14256A 40514256AJ70R2 MCM514256AJ80R2 MCM51L4256AJ70R2 MCM51L4256AJ80R2 MCM514256AZ70 MCM514256AZ80 MCM51L4256AZ70 MCM51L4256AZ80 m514256 M514256A MCM514256AP70 M514256A-80 MCM514256AP80 MCM514256AJ70 M514 MCM514256AJ70R2 M51425 L42S PDF

    YS16

    Abstract: JTS5
    Text: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2333B-xxY S16/D S16 is a fully decoded 524,288-w ord x 32-bit CM O S D ynam ic Random Access M em ory M odule com posed of sixteen 1-Mb DRAM s in SOJ M SM 514256B packages mounted


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    MSC2333B-XXYS16/DS16 288-Word 32-Bit 2333B-xxY S16/D 288-w 514256B) 72-pin YS16 JTS5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 Advanced Inform ation • • • • • • • • • • 262 144 w ords by 4-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60


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    514256B-60/-70/-80 514256BL-60/-70 514256B/BL-60) 514256B/BL-70) 514256B-80) PDF

    bl70

    Abstract: q542 514256B-80
    Text: SIEMENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 Advanced Inform ation • • • • • • • • • • 262 144 words by 4-bit organization Fast access and cycle time 60 ns access tim e 110 ns cycle tim e HYB 514256B/BL-60


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    514256B-60/-70/-80 514256BL-60/-70 514256B/BL-60) 514256B/BL-70) 514256B-80) bl70 q542 514256B-80 PDF

    514256

    Abstract: HM514256 m514256 M 514256 hitachi HM514256 514256P HM514256-10
    Text: Preliminary H M 514256 S e rie s 262144-word x 4-bit CMOS Dynamic Random Access Memory The Hitachi H M 5 1 4 2 5 6 Series is a C M O S dynam ic R A M or­ ganized 262144-w ord x 4-bit. H M 5 1 4 2 5 6 has realized higher density, higher performance and various functions by em ploying


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    262144-word 262144-w 20-pin 514256P DP-20NA) 514256ZP 514256 HM514256 m514256 M 514256 hitachi HM514256 HM514256-10 PDF

    M514256B

    Abstract: *m514256B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro­


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    514256B MCM514256B-MCM51L4256B MOTOD010 51L4256B MCM514256BJ60 MCM51L4256BJ60 MCM514256BJ60R2 MCM51L4256BJ60R2 M514256B *m514256B PDF

    514256

    Abstract: 514256A
    Text: SEMICONDUCTOR TECHNICAL DATA MCM94256 256K x 9 Bit Dynamic Random Access Memory Module The M CM 94256 is a 2.25M dynam ic random access m em ory DRAM module organized as 262,144 x 9 bits. The module is a 30-lead single-in-line m em ory module (SIM M) consisting of tw o M C M 514256A DRAMs housed in 20/26 J-lead


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    MCM94256 30-lead 14256A 18-lead MCM94256S70 MCM94256S80 514256 514256A PDF

    514256A

    Abstract: l 7251 3.1
    Text: nOTOROLA M SC { N E M O R Y / A S I bSE D • b 3 b ? 5 S l 00flT203 325 M O T O R O LA 514256A Advance Information Commercial Plus and Mil/Aero Applications 256K x 4 CMOS Dynamic RAM Page Mode E L E C TR IC A LLY T E S T E D PER: M P G 514256A The 514256A is a 1.0^ CMOS high-speed, dynamic random access memory.


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    00flT203 14256A 514256A l 7251 3.1 PDF

    MCM514256A-10

    Abstract: MCM514256AP10 MCM514256AJ80 MCM514256AZ80 MCM514256AJ70 CM514256 MCM51L4256A-80 M514256A MCM514256AJ10 MCM51L4256
    Text: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA 514256A MCM51L4256A Advance Information 2 5 6 K X 4 CMOS Dynamic RAM P PACKAGE PLASTIC CASE 738A T h e M C M 514256A is a 1.2p C M O S high-speed, d y n a m ic random access m e m o ry. It is organized as 262,144 fo u r-b it w o rd s a n d fa b ric a te d w ith C M O S silic o n -g a te process te c h ­


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    MCM514256A MCM51L4256A 14256A 300-m Numbers-MCM514256AP70 MCM5142S6AP80 MCM514256AP10 MCM514256A-10 MCM514256AJ80 MCM514256AZ80 MCM514256AJ70 CM514256 MCM51L4256A-80 M514256A MCM514256AJ10 MCM51L4256 PDF

    514256

    Abstract: 514256A
    Text: SEMICONDUCTOR TECHNICAL DATA MCM36512 512K x 36 Bit Dynamic Random Access Memory Module The M CM 36512 is an 18M dynam ic random access m em ory DRAM module organized as 524,288 x 36 bits. The module is a 72-lead double-sided single-in-line m em ory module (SIMM) consisting of sixteen M C M 514256A DRAMs housed in 20/26


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    MCM36512 72-lead 14256A 18-lead MCM36512S70 MCM36512S80 MCM36512SG70 MCM36512SG80 514256 514256A PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 A d va n c e In fo rm atio n • • 262 144 w o rd s by 4 -b it org a n iza tio n F ast a cce ss and cycle tim e 60 ns acce ss tim e 110 ns cycle tim e H Y B 5142 5 6B /B L -60


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    514256B-60/-70/-80 514256BL-60/-70 514256B/514256BL PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2320B-xxY S9/D S9 is a fully decoded 262,144-w ord x 36-bit CM OS Dynamic Random Access Memory M odule . It is com posed of eight 1-Mb DRAM s in SO J M SM 514256B packages, and four 256Kb


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    MSC2320B-XXYS9/DS9 144-Word 36-Bit 2320B-xxY 144-w 514256B) 256Kb 51C256A) 72pin PDF